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Class Information
Number: 257/194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor > Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt))
Description: Subject matter wherein the heterojunction field effect transistor has impurity dopant on the side of the heterojunction with lower affinity for the charge carriers (holes or










Sub-classes under this class:

Class Number Class Name Patents
257/195 Combined with diverse type device 244


Patents under this class:
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Patent Number Title Of Patent Date Issued
5432356 Semiconductor heterojunction floating layer memory device and method for storing information in the same Jul. 11, 1995
5430310 Field effect transistor Jul. 4, 1995
5412230 High electron mobility transistor having improved electron controllability May. 2, 1995
5412231 Semiconductor device having organically doped structure May. 2, 1995
5412232 Semiconductor device having an improved electron transport property at a high electric field May. 2, 1995
5412236 Compound semiconductor device and method of making it May. 2, 1995
5410167 Semiconductor device with reduced side gate effect Apr. 25, 1995
5408106 Lateral resonant tunneling transistor with heterojunction barriers Apr. 18, 1995
5408111 Field-effect transistor having a double pulse-doped structure Apr. 18, 1995
5406094 Quantum interference effect semiconductor device and method of producing the same Apr. 11, 1995
5406099 High electron mobility transistor Apr. 11, 1995
5404032 Field-effect semiconductor device Apr. 4, 1995
5399886 Heterojunction FET with a high potential barrier layer and gate structure Mar. 21, 1995
5399887 Modulation doped field effect transistor Mar. 21, 1995
5396089 Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface Mar. 7, 1995
5393990 HEMT structure Feb. 28, 1995
5391899 Compound semiconductor device with a particular gate structure Feb. 21, 1995
5389802 Heterojunction field effect transistor (HJFET) having an improved frequency characteristic Feb. 14, 1995
5381027 Semiconductor device having a heterojunction and a two dimensional gas as an active layer Jan. 10, 1995
5373168 Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer Dec. 13, 1994
5373191 Semiconductor device and method of producing the same Dec. 13, 1994
5371387 Field effect transistors Dec. 6, 1994
5371388 Electron wave interference devices, methods for modulating an interference current and electron wave branching and/or combining devices and methods therefor Dec. 6, 1994
5369288 Semiconductor device for switching a ballistic flow of carriers Nov. 29, 1994
5367182 Compound semiconductor device for reducing the influence of resistance anisotropy on operating characteristics thereof Nov. 22, 1994
5367183 Semiconductor device with complementary transistors Nov. 22, 1994
5357119 Field effect devices having short period superlattice structures using Si and Ge Oct. 18, 1994
5355005 Self-doped complementary field effect transistor Oct. 11, 1994
5352909 Field effect transistor and method for manufacturing the same Oct. 4, 1994
5350936 Linear field effect transistor Sep. 27, 1994
5350940 Enhanced mobility metal oxide semiconductor devices Sep. 27, 1994
5351128 Semiconductor device having reduced contact resistance between a channel or base layer and a contact layer Sep. 27, 1994
5349214 Complementary heterojunction device Sep. 20, 1994
5343056 Compound semiconductor device Aug. 30, 1994
5343057 Thin film, field effect transistor with a controlled energy band Aug. 30, 1994
5341007 Semiconductor device and a method for fabricating the same Aug. 23, 1994
5336901 Composite semiconductor structure for reducing scattering of carriers by optical phonons and a semiconductor device that uses such a composite semiconductor structure Aug. 9, 1994
5332911 Semiconductor component with adiabatic transport in edge channels Jul. 26, 1994
5331410 Field effect transistor having a sandwiched channel layer Jul. 19, 1994
5326995 Semiconductor device having a heterojunction interface for transporting carriers with improved carrier mobility Jul. 5, 1994
5323030 Field effect real space transistor Jun. 21, 1994
5321278 High electron mobility transistor Jun. 14, 1994
5319223 High electron mobility transistor Jun. 7, 1994
5313093 Compound semiconductor device May. 17, 1994
5311045 Field effect devices with ultra-short gates May. 10, 1994
5311046 Long wavelength transmitter opto-electronic integrated circuit May. 10, 1994
5309003 Article comprising a real space transfer semiconductor device, and method of making the article May. 3, 1994
5304825 Linear heterojunction field effect transistor Apr. 19, 1994
5302840 HEMT type semiconductor device having two semiconductor well layers Apr. 12, 1994
5294818 MISFET including GaAs substrate and a Group II-VI gate insulator Mar. 15, 1994

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