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Class Information
Number: 257/194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor > Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt))
Description: Subject matter wherein the heterojunction field effect transistor has impurity dopant on the side of the heterojunction with lower affinity for the charge carriers (holes or

Sub-classes under this class:

Class Number Class Name Patents
257/195 Combined with diverse type device 244

Patents under this class:

Patent Number Title Of Patent Date Issued
8592869 Nitride-based heterojunction semiconductor device and method for the same Nov. 26, 2013
8592868 Normally-off semiconductor devices Nov. 26, 2013
8592867 Wide bandgap HEMTS with source connected field plates Nov. 26, 2013
8592866 Transistor Nov. 26, 2013
8587032 Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel Nov. 19, 2013
8587031 Dual-gate normally-off nitride transistors Nov. 19, 2013
8587030 Compound semiconductor device and method of manufacturing the same Nov. 19, 2013
8586994 Semiconductor device Nov. 19, 2013
8586993 Normally-off compound semiconductor tunnel transistor Nov. 19, 2013
8586462 Method of manufacturing a field-effect transistor Nov. 19, 2013
8581300 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8581261 Compound semiconductor device and method of manufacturing the same Nov. 12, 2013
8575657 Direct growth of diamond in backside vias for GaN HEMT devices Nov. 5, 2013
8569842 Semiconductor device arrangement with a first semiconductor device and with a plurality of second semiconductor devices Oct. 29, 2013
8569799 III-V semiconductor devices with buried contacts Oct. 29, 2013
8569796 Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer Oct. 29, 2013
8569769 E-mode high electron mobility transistors and methods of manufacturing the same Oct. 29, 2013
8564022 Power device and method for manufacturing the same Oct. 22, 2013
8564021 Semiconductor device and its manufacturing method Oct. 22, 2013
8564020 Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same Oct. 22, 2013
8563372 Methods of forming contact structures including alternating metal and silicon layers and related devices Oct. 22, 2013
RE44538 Indium gallium nitride channel high electron mobility transistors, and method of making the same Oct. 15, 2013
8558285 Method using low temperature wafer bonding to fabricate transistors with heterojunctions of Si(Ge) to III-N materials Oct. 15, 2013
8558281 Gate metallization methods for self-aligned sidewall gate GaN HEMT Oct. 15, 2013
8552471 Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same Oct. 8, 2013
8546852 Semiconductor device Oct. 1, 2013
8546849 High voltage cascoded III-nitride rectifier package utilizing clips on package surface Oct. 1, 2013
8546848 Nitride semiconductor device Oct. 1, 2013
8546207 Method for fabricating semiconductor wafers for the integration of silicon components with HEMTs, and appropriate semiconductor layer arrangement Oct. 1, 2013
8541818 Semiconductor heterostructure diodes Sep. 24, 2013
8541817 Multilayer barrier III-nitride transistor for high voltage electronics Sep. 24, 2013
8541816 III nitride electronic device and III nitride semiconductor epitaxial substrate Sep. 24, 2013
8541815 High electron mobility transistor circuit Sep. 24, 2013
8536624 Active area shaping for III-nitride devices Sep. 17, 2013
8536623 High electron mobility transistor and method of manufacturing the same Sep. 17, 2013
8536621 Quantum-well-based semiconductor devices Sep. 17, 2013
8530978 High current high voltage GaN field effect transistors and method of fabricating same Sep. 10, 2013
8530937 Compound semiconductor device having insulation film with different film thicknesses beneath electrodes Sep. 10, 2013
8525231 Semiconductor device and method of manufacturing the same Sep. 3, 2013
8525230 Field-effect transistor with compositionally graded nitride layer on a silicaon substrate Sep. 3, 2013
8525229 Semiconductor device Sep. 3, 2013
8525225 Semiconductor device Sep. 3, 2013
8519442 High electron mobility transistor having a high speed switching function Aug. 27, 2013
8519441 High speed high power nitride semiconductor device Aug. 27, 2013
8519440 Semiconductor device Aug. 27, 2013
8518768 Extreme high mobility CMOS logic Aug. 27, 2013
8513705 Power electronic devices, methods of manufacturing the same, and integrated circuit modules including the same Aug. 20, 2013
8513703 Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for form Aug. 20, 2013
8507950 Method of producing semiconductor wafer and semiconductor wafer Aug. 13, 2013
8507919 Field-effect transistor Aug. 13, 2013

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