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Class Information
Number: 257/194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor > Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt))
Description: Subject matter wherein the heterojunction field effect transistor has impurity dopant on the side of the heterojunction with lower affinity for the charge carriers (holes or










Sub-classes under this class:

Class Number Class Name Patents
257/195 Combined with diverse type device 244


Patents under this class:
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Patent Number Title Of Patent Date Issued
6853018 Semiconductor device having a channel layer, first semiconductor layer, second semiconductor layer, and a conductive impurity region Feb. 8, 2005
6849866 High performance optoelectronic and electronic inversion channel quantum well devices suitable for monolithic integration Feb. 1, 2005
6849882 Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer Feb. 1, 2005
6849883 Strained SOI MOSFET device and method of fabricating same Feb. 1, 2005
6849884 Strained Fin FETs structure and method Feb. 1, 2005
6844227 Semiconductor devices and method for manufacturing the same Jan. 18, 2005
6838712 Per-bit set-up and hold time adjustment for double-data rate synchronous DRAM Jan. 4, 2005
6835969 Split-channel high electron mobility transistor (HEMT) device Dec. 28, 2004
6828628 Diffused MOS devices with strained silicon portions and methods for forming same Dec. 7, 2004
6825122 Method for fabricating a patterned thin film and a micro device Nov. 30, 2004
6822307 Semiconductor triode device having a compound-semiconductor channel layer Nov. 23, 2004
6818925 Semiconductor substrates and structures Nov. 16, 2004
6818928 Quaternary-ternary semiconductor devices Nov. 16, 2004
6818938 MOS transistor and method of forming the transistor with a channel region in a layer of composite material Nov. 16, 2004
6812505 Semiconductor device Nov. 2, 2004
6809352 Palladium silicide (PdSi) schottky electrode for gallium nitride semiconductor devices Oct. 26, 2004
6800878 Field-effect type compound semiconductor device and method for fabricating the same Oct. 5, 2004
6797994 Double recessed transistor Sep. 28, 2004
6787820 Hetero-junction field effect transistor having an InGaAIN cap film Sep. 7, 2004
6787821 Compound semiconductor device having a mesfet that raises the maximum mutual conductance and changes the mutual conductance Sep. 7, 2004
6787822 Heterojunction III-V transistor, in particular HEMT field effect transistor or heterojunction bipolar transistor Sep. 7, 2004
6784035 Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate Aug. 31, 2004
6784466 Si/SiGe optoelectronic integrated circuits Aug. 31, 2004
6781163 Heterojunction field effect transistor Aug. 24, 2004
6781164 Semiconductor element Aug. 24, 2004
6770902 Charge carrier extracting transistor Aug. 3, 2004
6762083 Method for manufacturing heterojunction field effect transistor device Jul. 13, 2004
6747297 Semiconductor device Jun. 8, 2004
6737684 Bipolar transistor and semiconductor device May. 18, 2004
6734461 SiC wafer, SiC semiconductor device, and production method of SiC wafer May. 11, 2004
6730945 Semiconductor device May. 4, 2004
6727531 Indium gallium nitride channel high electron mobility transistors, and method of making the same Apr. 27, 2004
6724019 Multi-layered, single crystal field effect transistor Apr. 20, 2004
6720589 Semiconductor device Apr. 13, 2004
6713779 Semiconductor device and method of manufacturing the same Mar. 30, 2004
6710379 Fully relaxed channel HEMT device Mar. 23, 2004
6707076 Semiconductor element Mar. 16, 2004
6703649 Semiconductor element Mar. 9, 2004
6690035 Semiconductor device having an active region of alternating layers Feb. 10, 2004
6690043 Semiconductor device and method of manufacturing the same Feb. 10, 2004
6674100 SiGeC-based CMOSFET with separate heterojunctions Jan. 6, 2004
6674101 GaN-based semiconductor device Jan. 6, 2004
6670652 Monolithically integrated E/D mode HEMT and method for fabricating the same Dec. 30, 2003
6661039 Velocity-cooled hot-electron bolometric mixer/detector Dec. 9, 2003
6653667 GaAs-based semiconductor field-effect transistor Nov. 25, 2003
6653668 Radio frequency modules and modules for moving target detection Nov. 25, 2003
6646293 Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates Nov. 11, 2003
6639255 GaN-based HFET having a surface-leakage reducing cap layer Oct. 28, 2003
6635909 Strained fin FETs structure and method Oct. 21, 2003
6627473 Compound semiconductor device with delta doped layer under etching stopper layer for decreasing resistance between active layer and ohmic electrode and process of fabrication thereof Sep. 30, 2003

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