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Class Information
Number: 257/194
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor > Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt))
Description: Subject matter wherein the heterojunction field effect transistor has impurity dopant on the side of the heterojunction with lower affinity for the charge carriers (holes or
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7618851 |
Method for the production of a semiconductor component having a metallic gate electrode disposed in a double-recess structure |
Nov. 17, 2009 |
| 7619240 |
Semiconductor photodetector, device for multispectrum detection of electromagnetic radiation using such a photodetector and method for using such a device |
Nov. 17, 2009 |
| 7615774 |
Aluminum free group III-nitride based high electron mobility transistors |
Nov. 10, 2009 |
| 7612390 |
Heterojunction transistors including energy barriers |
Nov. 3, 2009 |
| 7608864 |
High electron mobility transistor with mesa structure and reduced gate leakage current |
Oct. 27, 2009 |
| 7608865 |
Club extension to a T-gate high electron mobility transistor |
Oct. 27, 2009 |
| 7601567 |
Method of preparing organic thin film transistor, organic thin film transistor, and organic light-emitting display device including the organic thin film transistor |
Oct. 13, 2009 |
| 7601993 |
Semiconductor device having ohmic recessed electrode |
Oct. 13, 2009 |
| 7598131 |
High power-low noise microwave GaN heterojunction field effect transistor |
Oct. 6, 2009 |
| 7598108 |
Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers |
Oct. 6, 2009 |
| 7595544 |
Semiconductor device and manufacturing method thereof |
Sep. 29, 2009 |
| 7595507 |
Semiconductor devices having gallium nitride epilayers on diamond substrates |
Sep. 29, 2009 |
| 7592647 |
Semiconductor device and manufacturing method thereof |
Sep. 22, 2009 |
| 7589360 |
Group III nitride semiconductor devices and methods of making |
Sep. 15, 2009 |
| 7585706 |
Method of fabricating a semiconductor device |
Sep. 8, 2009 |
| 7576373 |
Nitride semiconductor device and method for manufacturing the same |
Aug. 18, 2009 |
| 7573079 |
Field effect type semiconductor device |
Aug. 11, 2009 |
| 7573078 |
Wide bandgap transistors with multiple field plates |
Aug. 11, 2009 |
| 7569870 |
Gallium-nitride-based compound semiconductor device |
Aug. 4, 2009 |
| 7569869 |
Transistor having tensile strained channel and system including same |
Aug. 4, 2009 |
| 7569459 |
Nonvolatile programmable resistor memory cell |
Aug. 4, 2009 |
| 7569871 |
Gallium nitride material transistors and methods associated with the same |
Aug. 4, 2009 |
| 7566918 |
Nitride based transistors for millimeter wave operation |
Jul. 28, 2009 |
| 7566898 |
Buffer architecture formed on a semiconductor wafer |
Jul. 28, 2009 |
| 7564074 |
Semiconductor device including a lateral field-effect transistor and Schottky diode |
Jul. 21, 2009 |
| 7560752 |
Field effect transistor including two group III-V compound semiconductor layers |
Jul. 14, 2009 |
| 7557378 |
Boron aluminum nitride diamond heterostructure |
Jul. 7, 2009 |
| 7557389 |
Field-effect transistor |
Jul. 7, 2009 |
| 7550785 |
PHEMT structure having recessed ohmic contact and method for fabricating same |
Jun. 23, 2009 |
| 7550784 |
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
Jun. 23, 2009 |
| 7550783 |
Wide bandgap HEMTs with source connected field plates |
Jun. 23, 2009 |
| 7547911 |
Gan-based field effect transistor and production method therefor |
Jun. 16, 2009 |
| 7547928 |
AlGaN/GaN high electron mobility transistor devices |
Jun. 16, 2009 |
| 7544963 |
Binary group III-nitride based high electron mobility transistors |
Jun. 9, 2009 |
| 7538365 |
Field effect transistor with aluminum and phosphorus etch stop layer |
May. 26, 2009 |
| 7538366 |
Nitride semiconductor device |
May. 26, 2009 |
| 7528423 |
Semiconductor device |
May. 5, 2009 |
| 7525154 |
Semiconductor substrate, manufacturing method therefor, and semiconductor device |
Apr. 28, 2009 |
| 7521732 |
Vertical heterostructure field effect transistor and associated method |
Apr. 21, 2009 |
| 7518154 |
Nitride semiconductor substrate and semiconductor element built thereon |
Apr. 14, 2009 |
| 7518166 |
Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate |
Apr. 14, 2009 |
| 7508015 |
Semiconductor device using a nitride semiconductor |
Mar. 24, 2009 |
| 7508014 |
Field effect transistor including a gate electrode and an additional electrode |
Mar. 24, 2009 |
| 7504673 |
Semiconductor device including a lateral field-effect transistor and Schottky diode |
Mar. 17, 2009 |
| 7501670 |
Cascode circuit employing a depletion-mode, GaN-based FET |
Mar. 10, 2009 |
| 7501669 |
Wide bandgap transistor devices with field plates |
Mar. 10, 2009 |
| 7498617 |
III-nitride integrated schottky and power device |
Mar. 3, 2009 |
| 7498618 |
Nitride semiconductor device |
Mar. 3, 2009 |
| 7495268 |
Semiconductor device and manufacturing method of the same |
Feb. 24, 2009 |
| 7491612 |
Field effect transistor with a heterostructure and associated production method |
Feb. 17, 2009 |
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