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Class Information
Number: 257/192
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor
Description: Subject matter wherein the heterojunction is part of a field effect transistor, i.e., wherein the current through the active heterojunction is controlled by a voltage applied between gate and source terminals of the device.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7612364 |
MOS devices with source/drain regions having stressed regions and non-stressed regions |
Nov. 3, 2009 |
| 7608864 |
High electron mobility transistor with mesa structure and reduced gate leakage current |
Oct. 27, 2009 |
| 7605407 |
Composite stressors with variable element atomic concentrations in MOS devices |
Oct. 20, 2009 |
| 7601993 |
Semiconductor device having ohmic recessed electrode |
Oct. 13, 2009 |
| 7601995 |
Integrated circuit having resistive memory cells |
Oct. 13, 2009 |
| 7598131 |
High power-low noise microwave GaN heterojunction field effect transistor |
Oct. 6, 2009 |
| 7595536 |
Semiconductor device |
Sep. 29, 2009 |
| 7595544 |
Semiconductor device and manufacturing method thereof |
Sep. 29, 2009 |
| 7592646 |
Semiconductor device with a SiGe layer having uniaxial lattice strain |
Sep. 22, 2009 |
| 7592647 |
Semiconductor device and manufacturing method thereof |
Sep. 22, 2009 |
| 7589360 |
Group III nitride semiconductor devices and methods of making |
Sep. 15, 2009 |
| 7585706 |
Method of fabricating a semiconductor device |
Sep. 8, 2009 |
| 7579634 |
Semiconductor device including a field effect transistor |
Aug. 25, 2009 |
| 7576373 |
Nitride semiconductor device and method for manufacturing the same |
Aug. 18, 2009 |
| 7573078 |
Wide bandgap transistors with multiple field plates |
Aug. 11, 2009 |
| 7573079 |
Field effect type semiconductor device |
Aug. 11, 2009 |
| 7573083 |
Transistor type ferroelectric memory and method of manufacturing the same |
Aug. 11, 2009 |
| 7569848 |
Mobility enhanced CMOS devices |
Aug. 4, 2009 |
| 7569870 |
Gallium-nitride-based compound semiconductor device |
Aug. 4, 2009 |
| 7569871 |
Gallium nitride material transistors and methods associated with the same |
Aug. 4, 2009 |
| 7566917 |
Electronic device and heterojunction FET |
Jul. 28, 2009 |
| 7566913 |
Gallium nitride material devices including conductive regions and methods associated with the same |
Jul. 28, 2009 |
| 7566916 |
Ohmic metal contact and channel protection in GaN devices using an encapsulation layer |
Jul. 28, 2009 |
| 7564074 |
Semiconductor device including a lateral field-effect transistor and Schottky diode |
Jul. 21, 2009 |
| 7564073 |
CMOS and HCMOS semiconductor integrated circuit |
Jul. 21, 2009 |
| 7560301 |
Coating liquid for forming organic layered film, method of manufacturing field effect transistor, and field effect transistor |
Jul. 14, 2009 |
| 7560326 |
Silicon/silcion germaninum/silicon body device with embedded carbon dopant |
Jul. 14, 2009 |
| 7560752 |
Field effect transistor including two group III-V compound semiconductor layers |
Jul. 14, 2009 |
| 7557378 |
Boron aluminum nitride diamond heterostructure |
Jul. 7, 2009 |
| 7557388 |
MOSFET formed on a strained silicon layer |
Jul. 7, 2009 |
| 7550785 |
PHEMT structure having recessed ohmic contact and method for fabricating same |
Jun. 23, 2009 |
| 7550783 |
Wide bandgap HEMTs with source connected field plates |
Jun. 23, 2009 |
| 7550784 |
Nitride-based transistors and methods of fabrication thereof using non-etched contact recesses |
Jun. 23, 2009 |
| 7547911 |
Gan-based field effect transistor and production method therefor |
Jun. 16, 2009 |
| 7547932 |
Vertical gate-depleted single electron transistor |
Jun. 16, 2009 |
| 7538364 |
Compound semiconductor FET |
May. 26, 2009 |
| 7538365 |
Field effect transistor with aluminum and phosphorus etch stop layer |
May. 26, 2009 |
| 7538480 |
Organic thin film transistor and flat panel display device including the same |
May. 26, 2009 |
| 7531849 |
High performance FET devices |
May. 12, 2009 |
| 7528424 |
Integrated circuitry |
May. 5, 2009 |
| 7525130 |
Polarization-doped field effect transistors (POLFETS) and materials and methods for making the same |
Apr. 28, 2009 |
| 7521731 |
Semiconductor device and method of manufacturing the same |
Apr. 21, 2009 |
| 7521732 |
Vertical heterostructure field effect transistor and associated method |
Apr. 21, 2009 |
| 7518166 |
Transistor or semiconductor device comprising ohmic contact in an epitaxy substrate |
Apr. 14, 2009 |
| 7507988 |
Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer |
Mar. 24, 2009 |
| 7508014 |
Field effect transistor including a gate electrode and an additional electrode |
Mar. 24, 2009 |
| 7508015 |
Semiconductor device using a nitride semiconductor |
Mar. 24, 2009 |
| 7504691 |
Power trench MOSFETs having SiGe/Si channel structure |
Mar. 17, 2009 |
| 7501669 |
Wide bandgap transistor devices with field plates |
Mar. 10, 2009 |
| 7501668 |
Semiconductor memory devices having contact pads with silicide caps thereon |
Mar. 10, 2009 |
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