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Class Information
Number: 257/192
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Field effect transistor
Description: Subject matter wherein the heterojunction is part of a field effect transistor, i.e., wherein the current through the active heterojunction is controlled by a voltage applied between gate and source terminals of the device.










Sub-classes under this class:

Class Number Class Name Patents
257/194 Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (hemt)) 1,121


Patents under this class:

Patent Number Title Of Patent Date Issued
8710551 High electron mobility transistor and manufacturing method thereof Apr. 29, 2014
8710550 Semiconductor device with hetero-junction bodies Apr. 29, 2014
8710549 MOS device for eliminating floating body effects and self-heating effects Apr. 29, 2014
8710548 Semiconductor device and method for manufacturing the same Apr. 29, 2014
8709897 High performance strained source-drain structure and method of fabricating the same Apr. 29, 2014
8709886 Compound semiconductor device and manufacturing method therefor Apr. 29, 2014
8704273 Semiconductor device and method for manufacturing the same, and amplifier Apr. 22, 2014
8703587 Method of manufacturing of a semi-conductor element and semi-conductor element Apr. 22, 2014
8703558 Graphene device and method for manufacturing the same Apr. 22, 2014
8692288 Heterojunction bipolar transistors and methods of manufacture Apr. 8, 2014
8682116 Integrated circuit including non-planar structure and waveguide Mar. 25, 2014
8680580 Field effect transistor and process for manufacturing same Mar. 25, 2014
8680577 Recessed gate field effect transistor Mar. 25, 2014
8674408 Reducing source/drain resistance of III-V based transistors Mar. 18, 2014
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8673754 Method of forming gate dielectric layer and method of fabricating semiconductor device Mar. 18, 2014
8669590 Methods and apparatus for forming silicon germanium-carbon semiconductor structures Mar. 11, 2014
8669589 Robust transistors with fluorine treatment Mar. 11, 2014
8669163 Tunnel field-effect transistors with superlattice channels Mar. 11, 2014
8664694 Field effect transistor with narrow bandgap source and drain regions and method of fabrication Mar. 4, 2014
8659055 Semiconductor device, field-effect transistor, and electronic device Feb. 25, 2014
8659054 Method and structure for pFET junction profile with SiGe channel Feb. 25, 2014
8659020 Epitaxial silicon wafer and method for manufacturing same Feb. 25, 2014
8653604 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Feb. 18, 2014
8653561 III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device Feb. 18, 2014
8653560 Semiconductor device and fabrication method thereof Feb. 18, 2014
8653559 AlGaN/GaN hybrid MOS-HFET Feb. 18, 2014
8653558 Semiconductor device and method of making Feb. 18, 2014
8648388 High performance multi-finger strained silicon germanium channel PFET and method of fabrication Feb. 11, 2014
8647935 Buried oxidation for enhanced mobility Feb. 11, 2014
8643062 III-N device structures and methods Feb. 4, 2014
8643061 Structure of high-K metal gate semiconductor transistor Feb. 4, 2014
8637850 Transport conduits for contacts to graphene Jan. 28, 2014
8637373 Transistors and methods of manufacturing the same Jan. 28, 2014
8637358 Field-effect-transistor with self-aligned diffusion contact Jan. 28, 2014
8633518 Gallium nitride power devices Jan. 21, 2014
8633516 Source/drain stack stressor for semiconductor device Jan. 21, 2014
8633515 Transistors with immersed contacts Jan. 21, 2014
8633514 Group III nitride semiconductor wafer and group III nitride semiconductor device Jan. 21, 2014
8633471 Apparatus and methods for forming a modulation doped non-planar transistor Jan. 21, 2014
8633470 Techniques and configurations to impart strain to integrated circuit devices Jan. 21, 2014
8633106 Heterojunction bipolar transistors and methods of manufacture Jan. 21, 2014
8633094 GaN high voltage HFET with passivation plus gate dielectric multilayer structure Jan. 21, 2014
8629480 Hetero-junction tunneling transistor Jan. 14, 2014
8629479 Semiconductor device Jan. 14, 2014
8629478 Fin structure for high mobility multiple-gate transistor Jan. 14, 2014
8629454 Semiconductor device Jan. 14, 2014
8629016 Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer Jan. 14, 2014
8624304 Printed material constrained by well structures and devices including same Jan. 7, 2014
8624303 Field effect transistor Jan. 7, 2014











 
 
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