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Class Information
Number: 257/191
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Having graded composition
Description: Subject matter wherein the chemical composition of the semiconductor forming the heterojunction varies continuously in a direction either perpendicular or parallel to the junction.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8704207 Semiconductor device having nitride semiconductor layer Apr. 22, 2014
8680570 Gallium nitride devices with vias Mar. 25, 2014
8674382 Semiconductor light emitting device comprising heterojunction Mar. 18, 2014
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8586859 Wafer level interconnection of inverted metamorphic multijunction solar cells Nov. 19, 2013
8575659 Carbon-beryllium combinationally doped semiconductor Nov. 5, 2013
8530995 High operating temperature split-off band infrared detector with double and/or graded barrier Sep. 10, 2013
8519437 Polarization doping in nitride based diodes Aug. 27, 2013
8507787 Solar cell having a discontinuously graded doping concentration Aug. 13, 2013
8487346 Semiconductor device Jul. 16, 2013
8471244 Method and system for providing a metal oxide semiconductor device having a drift enhanced channel Jun. 25, 2013
8466495 Field effect transistor with reduced gate leakage current Jun. 18, 2013
8461590 Photodetector circuit, input device, and input/output device Jun. 11, 2013
8445940 Source and drain feature profile for improving device performance May. 21, 2013
8436398 Back diffusion suppression structures May. 7, 2013
8436336 Structure and method for a high-speed semiconductor device having a Ge channel layer May. 7, 2013
8410524 Group III nitride semiconductor device and epitaxial substrate Apr. 2, 2013
8377788 SiGe heterojunction bipolar transistor and method of forming a SiGe heterojunction bipolar transistor Feb. 19, 2013
8378384 Wafer and method for producing a wafer Feb. 19, 2013
8368120 Hybrid semiconductor device having a GaN transistor and a silicon MOSFET Feb. 5, 2013
8350288 Gallium nitride devices with electrically conductive regions Jan. 8, 2013
8350290 Light-receiving device and manufacturing method for a light-receiving device Jan. 8, 2013
8343856 Method for forming gallium nitride devices with conductive regions Jan. 1, 2013
8338831 Semiconductor device and manufacturing method thereof Dec. 25, 2012
8330036 Method of fabrication and structure for multi-junction solar cell formed upon separable substrate Dec. 11, 2012
8264004 Mechanism for forming a remote delta doping layer of a quantum well structure Sep. 11, 2012
8264001 Semiconductor wafer having multi-layered buffer region formed from compound semiconductor materials Sep. 11, 2012
8263853 Wafer level interconnection of inverted metamorphic multijunction solar cells Sep. 11, 2012
8227291 Method of manufacturing stacked-layered thin film solar cell with a light-absorbing layer having band gradient Jul. 24, 2012
8212288 Compound semiconductor substrate comprising a multilayer buffer layer Jul. 3, 2012
8202794 Method of manufacturing field effect transistor having Ohmic electrode in a recess Jun. 19, 2012
8198652 Field effect transistor with reduced gate leakage current Jun. 12, 2012
8173891 Monolithic, multi-bandgap, tandem, ultra-thin, strain-counterbalanced, photovoltaic energy converters with optimal subcell bandgaps May. 8, 2012
8110427 Stacked-layered thin film solar cell and manufacturing method thereof Feb. 7, 2012
8106424 Field effect transistor with a heterostructure Jan. 31, 2012
8076684 Group III intride semiconductor light emitting element Dec. 13, 2011
8067687 High-efficiency, monolithic, multi-bandgap, tandem photovoltaic energy converters Nov. 29, 2011
8067786 Gallium nitride material devices including conductive regions Nov. 29, 2011
8067787 Semiconductor electronic device Nov. 29, 2011
8039835 Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus Oct. 18, 2011
8017977 Field effect transistor having recessed gate in compositional graded layer Sep. 13, 2011
8012592 Monolithically integrated semiconductor materials and devices Sep. 6, 2011
7923753 Field effect transistor having Ohmic electrode in a recess Apr. 12, 2011
7915640 Heterojunction semiconductor device and method of manufacturing Mar. 29, 2011
7821044 Transistor with improved tip profile and method of manufacture thereof Oct. 26, 2010
7791106 Gallium nitride material structures including substrates and methods associated with the same Sep. 7, 2010
7768031 Light emitting device and method of producing a light emitting device Aug. 3, 2010
7755023 Electronically tunable and reconfigurable hyperspectral photon detector Jul. 13, 2010
7737466 Semiconductor device and manufacturing method thereof Jun. 15, 2010

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