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Class Information
Number: 257/190
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch)
Description: Subject matter wherein at least one of the materials that form the heterojunction has a crystalline lattice constant which is made to differ from the lattice constant of the other material which forms the heterojunction.

Patents under this class:
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Patent Number Title Of Patent Date Issued
8710489 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same Apr. 29, 2014
8704207 Semiconductor device having nitride semiconductor layer Apr. 22, 2014
8692261 Light emitting device grown on a relaxed layer Apr. 8, 2014
8686472 Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate Apr. 1, 2014
8680575 Semiconductor device and method of fabrication Mar. 25, 2014
8680576 CMOS device and method of forming the same Mar. 25, 2014
8680580 Field effect transistor and process for manufacturing same Mar. 25, 2014
8680507 A1N inter-layers in III-N material grown on DBR/silicon substrate Mar. 25, 2014
8674407 Semiconductor device using a group III nitride-based semiconductor Mar. 18, 2014
8674337 Gallium nitride based light emitting diode and fabrication method thereof Mar. 18, 2014
8664693 Light emitting diode having algan buffer layer and method of fabricating the same Mar. 4, 2014
8659046 Light emitting device package and method for fabricating the same Feb. 25, 2014
8659020 Epitaxial silicon wafer and method for manufacturing same Feb. 25, 2014
8652918 Nitride semiconductor structure Feb. 18, 2014
8643059 Substrate structure and method of manufacturing the same Feb. 4, 2014
8643062 III-N device structures and methods Feb. 4, 2014
8643060 Method for manufacturing epitaxial crystal substrate, epitaxial crystal substrate and semiconductor device Feb. 4, 2014
8642430 Processes for preparing stressed semiconductor wafers and for preparing devices including the stressed semiconductor wafers Feb. 4, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8629479 Semiconductor device Jan. 14, 2014
8629477 Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication Jan. 14, 2014
8629531 Structure and method to reduce wafer warp for gallium nitride on silicon wafer Jan. 14, 2014
8629045 Reduction of edge effects from aspect ratio trapping Jan. 14, 2014
8628989 Tri-gate field-effect transistors formed by aspect ration trapping Jan. 14, 2014
8623683 Method of fabricating a nitride semiconductor light emitting device Jan. 7, 2014
8623713 Trench isolation structure Jan. 7, 2014
8624295 SRAM devices utilizing strained-channel transistors and methods of manufacture Jan. 7, 2014
8617945 Stacking fault and twin blocking barrier for integrating III-V on Si Dec. 31, 2013
8614464 Nitride-based semiconductor device and method for manufacturing the same Dec. 24, 2013
8604516 Heterojunction field-effect transistor with field plate connected to gate or source electrode Dec. 10, 2013
8592864 Semiconductor device and method for forming the same Nov. 26, 2013
8586859 Wafer level interconnection of inverted metamorphic multijunction solar cells Nov. 19, 2013
8586995 Semiconductor element having high breakdown voltage Nov. 19, 2013
8587032 Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel Nov. 19, 2013
8580593 Epitaxial formation structures and associated methods of manufacturing solid state lighting devices Nov. 12, 2013
8575471 Lattice matched semiconductor growth on crystalline metallic substrates Nov. 5, 2013
8569798 Semicondcutor device comprising transistor Oct. 29, 2013
8569796 Semiconductor wafer and semiconductor device having multilayered nitride semiconductor layer Oct. 29, 2013
8563984 Semiconductor device Oct. 22, 2013
8564018 Relaxed silicon germanium substrate with low defect density Oct. 22, 2013
8564019 Heterostructures comprising crystalline strain relaxation layers Oct. 22, 2013
8558279 Non-planar device having uniaxially strained semiconductor body and method of making same Oct. 15, 2013
8558280 Semiconductor device and method of manufacturing the semiconductor device Oct. 15, 2013
8558278 Strained transistor with optimized drive current and method of forming Oct. 15, 2013
8545627 Zirconium and hafnium boride alloy templates on silicon for nitride integration applications Oct. 1, 2013
8541814 Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacers Sep. 24, 2013
8530934 Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto Sep. 10, 2013
8530935 Semiconductor device with buffer layer for mitigating stress exerted on compound semiconductor layer Sep. 10, 2013
8530884 Strain inducing semiconductor regions Sep. 10, 2013
8530257 Band offset in alingap based light emitters to improve temperature performance Sep. 10, 2013

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