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Class Information
Number: 257/19
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice > Si x ge 1-x
Description: Subject matter wherein at least one of the strained superlattice materials is a silicon-germanium alloy.

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8710549 MOS device for eliminating floating body effects and self-heating effects Apr. 29, 2014
8703555 Defect prevention on SRAM cells that incorporate selective epitaxial regions Apr. 22, 2014
8704248 Coupled asymmetric quantum confinement structures Apr. 22, 2014
8704335 Spacer formation in the fabrication of planar bipolar transistors Apr. 22, 2014
8692332 Strained-silicon transistor and method of making the same Apr. 8, 2014
8653501 Emitting device and manufacturing method therefor Feb. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8647953 Method for fabricating first and second epitaxial cap layers Feb. 11, 2014
8643061 Structure of high-K metal gate semiconductor transistor Feb. 4, 2014
8642434 Structure and method for mobility enhanced MOSFETS with unalloyed silicide Feb. 4, 2014
8633573 Strained semiconductor materials, devices and methods therefore Jan. 21, 2014
8629426 Source/drain stressor having enhanced carrier mobility manufacturing same Jan. 14, 2014
8604496 Optical semiconductor device Dec. 10, 2013
8558257 Coupled asymmetric quantum confinement structures Oct. 15, 2013
8557670 SOI lateral bipolar junction transistor having a wide band gap emitter contact Oct. 15, 2013
8530884 Strain inducing semiconductor regions Sep. 10, 2013
8530257 Band offset in alingap based light emitters to improve temperature performance Sep. 10, 2013
8525162 Method of isolating nanowires from a substrate Sep. 3, 2013
8501570 Method of manufacturing source/drain structures Aug. 6, 2013
8502284 Semiconductor device and method of manufacturing semiconductor device Aug. 6, 2013
8471244 Method and system for providing a metal oxide semiconductor device having a drift enhanced channel Jun. 25, 2013
8471245 Use of sack geometry to implement a single qubit phase gate Jun. 25, 2013
8466450 Semiconductor device and fabrication method thereof Jun. 18, 2013
8455859 Strained structure of semiconductor device Jun. 4, 2013
8455858 Semiconductor structure for reducing band-to-band tunneling (BTBT) leakage Jun. 4, 2013
8445936 Integrally formed high-efficient multi-layer light-emitting device May. 21, 2013
8436336 Structure and method for a high-speed semiconductor device having a Ge channel layer May. 7, 2013
8426320 Method of formation of coherent wavy nanostructures (variants) Apr. 23, 2013
8421059 Strain-inducing semiconductor regions Apr. 16, 2013
8404546 Source/drain carbon implant and RTA anneal, pre-SiGe deposition Mar. 26, 2013
8399878 Silicon/germanium oxide particle inks and processes for forming solar cell components and for forming optical components Mar. 19, 2013
8377785 Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure Feb. 19, 2013
8373154 Strained transistor integration for CMOS Feb. 12, 2013
8350253 Integrated circuit with stress inserts Jan. 8, 2013
8344355 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Jan. 1, 2013
8299453 CMOS transistors with silicon germanium channel and dual embedded stressors Oct. 30, 2012
8293608 Intermediate product for a multichannel FET and process for obtaining an intermediate product Oct. 23, 2012
8288757 Semiconductor device and manufacturing method thereof Oct. 16, 2012
8288758 SOI SiGe-base lateral bipolar junction transistor Oct. 16, 2012
8283653 Non-planar germanium quantum well devices Oct. 9, 2012
8269303 SiGe photodiode Sep. 18, 2012
8269209 Isolation for nanowire devices Sep. 18, 2012
8263965 Single-crystal semiconductor layer with heteroatomic macro-network Sep. 11, 2012
8237150 Nanowire devices for enhancing mobility through stress engineering Aug. 7, 2012
8232165 Film wrapped NFET nanowire Jul. 31, 2012
8227792 Relaxed low-defect SGOI for strained SI CMOS applications Jul. 24, 2012
8207523 Metal oxide semiconductor field effect transistor with strained source/drain extension layer Jun. 26, 2012
RE43426 Fabrication method of transparent electrode on visible light-emitting diode May. 29, 2012
8183659 Integrated circuits having interconnects and heat dissipators based on nanostructures May. 22, 2012
8164085 Semiconductor device and production method thereof Apr. 24, 2012

1 2 3 4 5 6 7 8 9

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