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Class Information
Number: 257/189
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Light responsive structure > Having narrow energy band gap ( > Layer is a group iii-v semiconductor compound
Description: Subject matter wherein the narrow energy band gap layer is a semiconductor compound made of one element taken from periodic table group III elements and another element taken from periodic table group V elements.

Patents under this class:
1 2 3 4 5 6 7

Patent Number Title Of Patent Date Issued
8691618 Metal species surface treatment of thin film photovoltaic cell and manufacturing method Apr. 8, 2014
8674337 Gallium nitride based light emitting diode and fabrication method thereof Mar. 18, 2014
8674382 Semiconductor light emitting device comprising heterojunction Mar. 18, 2014
8674406 Extended wavelength digital alloy NBN detector Mar. 18, 2014
8664683 Carrier and optical semiconductor device based on such a carrier Mar. 4, 2014
8659053 Semiconductor light detecting element Feb. 25, 2014
8648387 Nitride semiconductor template and method of manufacturing the same Feb. 11, 2014
8647901 Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate Feb. 11, 2014
8637901 Low-defect density gallium nitride semiconductor structures and devices thereof Jan. 28, 2014
8633569 AlN inter-layers in III-N material grown on REO/silicon substrate Jan. 21, 2014
8628989 Tri-gate field-effect transistors formed by aspect ration trapping Jan. 14, 2014
8610170 Compound semiconductor light-receiving element array Dec. 17, 2013
8609517 MOCVD for growing III-V compound semiconductors on silicon substrates Dec. 17, 2013
8610171 Infrared detector with extended spectral response in the visible field Dec. 17, 2013
8592677 Substrate, solar cell including the substrate, and method of manufacturing the same Nov. 26, 2013
8564134 Semiconductor substrate, semiconductor device, and manufacturing methods thereof Oct. 22, 2013
8524581 GaN epitaxy with migration enhancement and surface energy modification Sep. 3, 2013
8525224 III-nitride power semiconductor device Sep. 3, 2013
8519414 III-nitride based semiconductor structure with multiple conductive tunneling layer Aug. 27, 2013
8513643 Mixed alloy defect redirection region and devices including same Aug. 20, 2013
8507307 Group IIB/VA semiconductors suitable for use in photovoltaic devices Aug. 13, 2013
8502204 Optoelectronic module Aug. 6, 2013
8482032 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer Jul. 9, 2013
8476639 Group III nitride semiconductor and group III nitride semiconductor structure Jul. 2, 2013
8450774 High performance power switch May. 28, 2013
8450773 Strain-compensated infrared photodetector and photodetector array May. 28, 2013
8436398 Back diffusion suppression structures May. 7, 2013
8426883 Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit Apr. 23, 2013
8426890 Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces Apr. 23, 2013
8415690 Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element Apr. 9, 2013
8373156 Biological component detection device Feb. 12, 2013
8368117 III-nitride materials including low dislocation densities and methods associated with the same Feb. 5, 2013
8362521 III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device Jan. 29, 2013
8350290 Light-receiving device and manufacturing method for a light-receiving device Jan. 8, 2013
8344359 Transistor having thermo electron cooling Jan. 1, 2013
8343782 Semiconductor device having an InGaN layer Jan. 1, 2013
8344418 Materials for interfacing high-K dielectric layers with III-V semiconductors Jan. 1, 2013
8330187 GaN-based field effect transistor Dec. 11, 2012
8324659 InGaAsSbN photodiode arrays Dec. 4, 2012
8306495 Semiconductor device Nov. 6, 2012
8269253 Rare earth enhanced high electron mobility transistor and method for fabricating same Sep. 18, 2012
8269297 Photodiode isolation in a photonic integrated circuit Sep. 18, 2012
8265582 Semiconductor device Sep. 11, 2012
8258497 Fabricating electronic-photonic devices having an active layer with spherical quantum dots Sep. 4, 2012
8242538 Method and device for growing pseudomorphic A1InAsSb on InAs Aug. 14, 2012
8242484 Vertical deep ultraviolet light emitting diodes Aug. 14, 2012
8242540 Epitaxial growth of III-V compound semiconductors on silicon surfaces Aug. 14, 2012
8222672 Semiconductor device and manufacturing method thereof Jul. 17, 2012
8222675 Nitride semiconductor device including gate insulating portion containing AIN Jul. 17, 2012
8198623 Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer Jun. 12, 2012

1 2 3 4 5 6 7

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