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Class Information
Number: 257/189
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Light responsive structure > Having narrow energy band gap ( > Layer is a group iii-v semiconductor compound
Description: Subject matter wherein the narrow energy band gap layer is a semiconductor compound made of one element taken from periodic table group III elements and another element taken from periodic table group V elements.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8691618 |
Metal species surface treatment of thin film photovoltaic cell and manufacturing method |
Apr. 8, 2014 |
| 8674337 |
Gallium nitride based light emitting diode and fabrication method thereof |
Mar. 18, 2014 |
| 8674382 |
Semiconductor light emitting device comprising heterojunction |
Mar. 18, 2014 |
| 8674406 |
Extended wavelength digital alloy NBN detector |
Mar. 18, 2014 |
| 8664683 |
Carrier and optical semiconductor device based on such a carrier |
Mar. 4, 2014 |
| 8659053 |
Semiconductor light detecting element |
Feb. 25, 2014 |
| 8648387 |
Nitride semiconductor template and method of manufacturing the same |
Feb. 11, 2014 |
| 8647901 |
Method for forming a nitride semiconductor layer and method for separating the nitride semiconductor layer from the substrate |
Feb. 11, 2014 |
| 8637901 |
Low-defect density gallium nitride semiconductor structures and devices thereof |
Jan. 28, 2014 |
| 8633569 |
AlN inter-layers in III-N material grown on REO/silicon substrate |
Jan. 21, 2014 |
| 8628989 |
Tri-gate field-effect transistors formed by aspect ration trapping |
Jan. 14, 2014 |
| 8610170 |
Compound semiconductor light-receiving element array |
Dec. 17, 2013 |
| 8609517 |
MOCVD for growing III-V compound semiconductors on silicon substrates |
Dec. 17, 2013 |
| 8610171 |
Infrared detector with extended spectral response in the visible field |
Dec. 17, 2013 |
| 8592677 |
Substrate, solar cell including the substrate, and method of manufacturing the same |
Nov. 26, 2013 |
| 8564134 |
Semiconductor substrate, semiconductor device, and manufacturing methods thereof |
Oct. 22, 2013 |
| 8524581 |
GaN epitaxy with migration enhancement and surface energy modification |
Sep. 3, 2013 |
| 8525224 |
III-nitride power semiconductor device |
Sep. 3, 2013 |
| 8519414 |
III-nitride based semiconductor structure with multiple conductive tunneling layer |
Aug. 27, 2013 |
| 8513643 |
Mixed alloy defect redirection region and devices including same |
Aug. 20, 2013 |
| 8507307 |
Group IIB/VA semiconductors suitable for use in photovoltaic devices |
Aug. 13, 2013 |
| 8502204 |
Optoelectronic module |
Aug. 6, 2013 |
| 8482032 |
Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer |
Jul. 9, 2013 |
| 8476639 |
Group III nitride semiconductor and group III nitride semiconductor structure |
Jul. 2, 2013 |
| 8450774 |
High performance power switch |
May. 28, 2013 |
| 8450773 |
Strain-compensated infrared photodetector and photodetector array |
May. 28, 2013 |
| 8436398 |
Back diffusion suppression structures |
May. 7, 2013 |
| 8426883 |
Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit |
Apr. 23, 2013 |
| 8426890 |
Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces |
Apr. 23, 2013 |
| 8415690 |
Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element |
Apr. 9, 2013 |
| 8373156 |
Biological component detection device |
Feb. 12, 2013 |
| 8368117 |
III-nitride materials including low dislocation densities and methods associated with the same |
Feb. 5, 2013 |
| 8362521 |
III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device |
Jan. 29, 2013 |
| 8350290 |
Light-receiving device and manufacturing method for a light-receiving device |
Jan. 8, 2013 |
| 8344359 |
Transistor having thermo electron cooling |
Jan. 1, 2013 |
| 8343782 |
Semiconductor device having an InGaN layer |
Jan. 1, 2013 |
| 8344418 |
Materials for interfacing high-K dielectric layers with III-V semiconductors |
Jan. 1, 2013 |
| 8330187 |
GaN-based field effect transistor |
Dec. 11, 2012 |
| 8324659 |
InGaAsSbN photodiode arrays |
Dec. 4, 2012 |
| 8306495 |
Semiconductor device |
Nov. 6, 2012 |
| 8269253 |
Rare earth enhanced high electron mobility transistor and method for fabricating same |
Sep. 18, 2012 |
| 8269297 |
Photodiode isolation in a photonic integrated circuit |
Sep. 18, 2012 |
| 8265582 |
Semiconductor device |
Sep. 11, 2012 |
| 8258497 |
Fabricating electronic-photonic devices having an active layer with spherical quantum dots |
Sep. 4, 2012 |
| 8242538 |
Method and device for growing pseudomorphic A1InAsSb on InAs |
Aug. 14, 2012 |
| 8242484 |
Vertical deep ultraviolet light emitting diodes |
Aug. 14, 2012 |
| 8242540 |
Epitaxial growth of III-V compound semiconductors on silicon surfaces |
Aug. 14, 2012 |
| 8222672 |
Semiconductor device and manufacturing method thereof |
Jul. 17, 2012 |
| 8222675 |
Nitride semiconductor device including gate insulating portion containing AIN |
Jul. 17, 2012 |
| 8198623 |
Photodiode array, method for manufacturing photodiode array, epitaxial wafer, and method for manufacturing epitaxial wafer |
Jun. 12, 2012 |
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