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Class Information
Number: 257/188
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Light responsive structure > Having narrow energy band gap (
Description: Subject matter wherein the light responsive device contains a narrow energy band gap (<<1eV) layer (e.g., PbSnTe or HgCdTe).
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7397066 |
Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers |
Jul. 8, 2008 |
| 7368762 |
Heterojunction photodiode |
May. 6, 2008 |
| 7268374 |
Semiconductor device and method of its manufacture |
Sep. 11, 2007 |
| 7214971 |
Semiconductor light-receiving device |
May. 8, 2007 |
| 7202511 |
Near-infrared visible light photon counter |
Apr. 10, 2007 |
| 7112829 |
Light emitting device and method for making same |
Sep. 26, 2006 |
| 7102185 |
Lightshield architecture for interline transfer image sensors |
Sep. 5, 2006 |
| 7049641 |
Use of deep-level transitions in semiconductor devices |
May. 23, 2006 |
| 7045833 |
Avalanche photodiodes with an impact-ionization-engineered multiplication region |
May. 16, 2006 |
| 7042003 |
Light receiving element using interconnected nanoparticles |
May. 9, 2006 |
| 7038253 |
GaN-based field effect transistor of a normally-off type |
May. 2, 2006 |
| 6906358 |
Nonequilibrium photodetector with superlattice exclusion layer |
Jun. 14, 2005 |
| 6894322 |
Back illuminated photodiodes |
May. 17, 2005 |
| 6888208 |
Square-law detector based on spin injection and nanowires |
May. 3, 2005 |
| 6855948 |
Low base-emitter voltage heterojunction bipolar transistor |
Feb. 15, 2005 |
| 6815250 |
Method for manufacturing infrared detector using diffusion of hydrogen plasma |
Nov. 9, 2004 |
| 6790701 |
Method of manufacturing a multi-wavelength semiconductor image sensor |
Sep. 14, 2004 |
| 6756613 |
Shallow-mesa structure for planar PIN and APD photodiodes |
Jun. 29, 2004 |
| 6677655 |
Silicon wafer with embedded optoelectronic material for monolithic OEIC |
Jan. 13, 2004 |
| 6670657 |
Integrated circuit having photodiode device and associated fabrication process |
Dec. 30, 2003 |
| 6649943 |
Group III nitride compound semiconductor light-emitting element |
Nov. 18, 2003 |
| 6646318 |
Bandgap tuned vertical color imager cell |
Nov. 11, 2003 |
| 6525348 |
Two terminal edge illuminated epilayer waveguide phototransistor |
Feb. 25, 2003 |
| 6465860 |
Multi-wavelength semiconductor image sensor and method of manufacturing the same |
Oct. 15, 2002 |
| 6459107 |
Photodetector having a mixed crystal layer of SiGeC |
Oct. 1, 2002 |
| 6452242 |
Multi color detector |
Sep. 17, 2002 |
| 6403990 |
Short turn-off time photoconductive switch |
Jun. 11, 2002 |
| 6359290 |
Self-aligned bump bond infrared focal plane array architecture |
Mar. 19, 2002 |
| 6307242 |
Semiconductor photo-detector with square-shaped optical wave-guide |
Oct. 23, 2001 |
| 6274882 |
Indium-based alloy and an infrared transducer using such an alloy |
Aug. 14, 2001 |
| 6188089 |
Semiconductor imaging device |
Feb. 13, 2001 |
| 6140145 |
Integrated infrared detection system |
Oct. 31, 2000 |
| 6127202 |
Oxide-based method of making compound semiconductor films and making related electronic devices |
Oct. 3, 2000 |
| 6114738 |
Intrinsic p-type HgCdTe using CdTe capping layer |
Sep. 5, 2000 |
| 6091127 |
Integrated infrared detection system |
Jul. 18, 2000 |
| 6037614 |
Methods for manufacturing group IV element alloy semiconductor materials and devices that include such materials |
Mar. 14, 2000 |
| 5991473 |
Waveguide type semiconductor photodetector |
Nov. 23, 1999 |
| 5969375 |
Infrared detector with non-cooled quantum well structure |
Oct. 19, 1999 |
| 5952703 |
Semiconductor devices and manufacturing method using II-VI compounds with wide area |
Sep. 14, 1999 |
| 5936268 |
Epitaxial passivation of group II-VI infrared photodetectors |
Aug. 10, 1999 |
| 5808329 |
Low light level imager with extended wavelength response employing atomic bonded (fused) semiconductor materials |
Sep. 15, 1998 |
| 5808350 |
Integrated IR, visible and NIR sensor and methods of fabricating same |
Sep. 15, 1998 |
| 5780880 |
High injection bipolar transistor |
Jul. 14, 1998 |
| 5731621 |
Three band and four band multispectral structures having two simultaneous signal outputs |
Mar. 24, 1998 |
| 5654558 |
Interband lateral resonant tunneling transistor |
Aug. 5, 1997 |
| 5646426 |
Contact metal diffusion barrier for semiconductor devices |
Jul. 8, 1997 |
| 5583338 |
HgCdTe S-I-S two color infrared detector |
Dec. 10, 1996 |
| 5581117 |
Si base substrate covered by a CdTe or Cd-rich CdZnTe layer |
Dec. 3, 1996 |
| 5581084 |
Simultaneous two color IR detector having common middle layer metallic contact |
Dec. 3, 1996 |
| 5559336 |
Integrated LPE-grown structure for simultaneous detection of infrared radiation in two bands |
Sep. 24, 1996 |
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