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Class Information
Number: 257/186
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Light responsive structure > Avalanche photodetection structure
Description: Subject matter wherein carriers generated in the active region of the device in response to light incident thereupon, achieve enough kinetic energy to knock further carriers from the crystalline lattice of the active region producing an avalanche or snowball increase in operating current level.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 5457327 |
Avalanche photodiode with an improved multiplication layer |
Oct. 10, 1995 |
| 5453629 |
Photoelectric conversion device having at least one step-back layer |
Sep. 26, 1995 |
| 5444274 |
Photodetector and opto-electronic integrated circuit |
Aug. 22, 1995 |
| 5432361 |
Low noise avalanche photodiode having an avalanche multiplication layer of InAlAs/InGaAlAs |
Jul. 11, 1995 |
| 5406097 |
Avalanche photo-diode for producing sharp pulse signal |
Apr. 11, 1995 |
| 5389797 |
Photodetector with absorbing region having resonant periodic absorption between reflectors |
Feb. 14, 1995 |
| 5369292 |
Avalanche photodiode having a multiplication layer with superlattice |
Nov. 29, 1994 |
| 5365088 |
Thermal/mechanical buffer for HgCdTe/Si direct hybridization |
Nov. 15, 1994 |
| 5365087 |
Photodetector and opto-electronic integrated circuit with guard ring |
Nov. 15, 1994 |
| 5343055 |
Avalanche photodiode structure with Mg doping and method |
Aug. 30, 1994 |
| 5338947 |
Avalanche photodiode including a multiplication layer and a photoabsorption layer |
Aug. 16, 1994 |
| 5324959 |
Semiconductor optical device having a heterointerface therein |
Jun. 28, 1994 |
| 5311044 |
Avalanche photomultiplier tube |
May. 10, 1994 |
| 5308995 |
Semiconductor strained SL APD apparatus |
May. 3, 1994 |
| 5302838 |
Multi-quantum well injection mode device |
Apr. 12, 1994 |
| 5288989 |
Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area |
Feb. 22, 1994 |
| 5272364 |
Semiconductor photodetector device with short lifetime region |
Dec. 21, 1993 |
| 5260560 |
Photoelectric transfer device |
Nov. 9, 1993 |
| 5233209 |
Guard ring structure with graded Be implantation |
Aug. 3, 1993 |
| 5204539 |
Avalanche photodiode with hetero-periodical structure |
Apr. 20, 1993 |
| 5198682 |
Multiple quantum well superlattice infrared detector with graded conductive band |
Mar. 30, 1993 |
| 5179430 |
Planar type heterojunction avalanche photodiode |
Jan. 12, 1993 |
| 5144381 |
Semiconductor light detector utilizing an avalanche effect and having an improved guard ring structure |
Sep. 1, 1992 |
| 5057891 |
Planar heterojunction avalanche photodiode |
Oct. 15, 1991 |
| 5001335 |
Semiconductor photodetector device and method of manufacturing the same |
Mar. 19, 1991 |
| 4984032 |
Semiconductor photodiode |
Jan. 8, 1991 |
| 4982255 |
Avalanche photodiode |
Jan. 1, 1991 |
| 4974061 |
Planar type heterostructure avalanche photodiode |
Nov. 27, 1990 |
| 4949144 |
Semiconductor photo-detector having a two-stepped impurity profile |
Aug. 14, 1990 |
| 4914494 |
Avalanche photodiode with central zone in active and absorptive layers |
Apr. 3, 1990 |
| 4876209 |
Method of making avalanche photodiode |
Oct. 24, 1989 |
| 4857982 |
Avalanche photodiode with floating guard ring |
Aug. 15, 1989 |
| 4839706 |
Avalanche photodetector |
Jun. 13, 1989 |
| 4816890 |
Optoelectronic device |
Mar. 28, 1989 |
| 4814847 |
Ingaas semiconductor structures |
Mar. 21, 1989 |
| 4783689 |
Photodiode having heterojunction |
Nov. 8, 1988 |
| 4761383 |
Method of manufacturing avalanche photo diode |
Aug. 2, 1988 |
| 4740819 |
Photo semiconductor device |
Apr. 26, 1988 |
| 4729963 |
Fabrication method for modified planar semiconductor structures |
Mar. 8, 1988 |
| 4729004 |
Semiconductor photo device |
Mar. 1, 1988 |
| 4701773 |
Semiconductor device for receiving light |
Oct. 20, 1987 |
| 4700209 |
Avalanche photodiode and a method of making same |
Oct. 13, 1987 |
| 4656494 |
Avalanche multiplication photodiode having a buried structure |
Apr. 7, 1987 |
| 4651187 |
Avalanche photodiode |
Mar. 17, 1987 |
| 4633287 |
Semiconductor photoelectric conversion device |
Dec. 30, 1986 |
| 4631566 |
Long wavelength avalanche photodetector |
Dec. 23, 1986 |
| 4599632 |
Photodetector with graded bandgap region |
Jul. 8, 1986 |
| 4481523 |
Avalanche photodiodes |
Nov. 6, 1984 |
| 4476477 |
Graded bandgap multilayer avalanche photodetector with energy step backs |
Oct. 9, 1984 |
| 4473835 |
Long wavelength avalanche photodetector |
Sep. 25, 1984 |
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