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Class Information
Number: 257/186
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device > Light responsive structure > Avalanche photodetection structure
Description: Subject matter wherein carriers generated in the active region of the device in response to light incident thereupon, achieve enough kinetic energy to knock further carriers from the crystalline lattice of the active region producing an avalanche or snowball increase in operating current level.










Patents under this class:
1 2 3 4 5 6

Patent Number Title Of Patent Date Issued
5719414 Photoelectric conversion semiconductor device with insulation film Feb. 17, 1998
5656831 Semiconductor photo detector Aug. 12, 1997
5646426 Contact metal diffusion barrier for semiconductor devices Jul. 8, 1997
5610389 Stabilized hybrid focal plane array structure Mar. 11, 1997
5610416 Avalanche photodiode with epitaxially regrown guard rings Mar. 11, 1997
5596186 High sensitivity silicon avalanche photodiode Jan. 21, 1997
5585624 Apparatus and method for mounting and stabilizing a hybrid focal plane array Dec. 17, 1996
5583352 Low-noise, reach-through, avalanche photodiodes Dec. 10, 1996
5569942 Avalanche photo-diode for producing sharp pulse signal Oct. 29, 1996
5557121 Laminated solid-state image sensing apparatus and method of manufacturing the same Sep. 17, 1996
5552629 Superlattice avalance photodiode Sep. 3, 1996
5543629 Superlattice avalanche photodiode (APD) Aug. 6, 1996
5539221 Staircase avalanche photodiode Jul. 23, 1996
5508529 Multi-quantum well injection mode device and associated electronic neuron apparatus Apr. 16, 1996
5481124 Laminated solid-state image pickup device Jan. 2, 1996
5475256 Opto-electronic integrated circuit Dec. 12, 1995
5471076 Semiconductor light-receiving device with graded layer Nov. 28, 1995
5471068 Semiconductor photodetector using avalanche multiplication and strained layers Nov. 28, 1995
5466965 High efficiency, high power multiquantum well IMPATT device with optical injection locking Nov. 14, 1995
5457327 Avalanche photodiode with an improved multiplication layer Oct. 10, 1995
5453629 Photoelectric conversion device having at least one step-back layer Sep. 26, 1995
5444274 Photodetector and opto-electronic integrated circuit Aug. 22, 1995
5432361 Low noise avalanche photodiode having an avalanche multiplication layer of InAlAs/InGaAlAs Jul. 11, 1995
5406097 Avalanche photo-diode for producing sharp pulse signal Apr. 11, 1995
5389797 Photodetector with absorbing region having resonant periodic absorption between reflectors Feb. 14, 1995
5369292 Avalanche photodiode having a multiplication layer with superlattice Nov. 29, 1994
5365088 Thermal/mechanical buffer for HgCdTe/Si direct hybridization Nov. 15, 1994
5365087 Photodetector and opto-electronic integrated circuit with guard ring Nov. 15, 1994
5343055 Avalanche photodiode structure with Mg doping and method Aug. 30, 1994
5338947 Avalanche photodiode including a multiplication layer and a photoabsorption layer Aug. 16, 1994
5324959 Semiconductor optical device having a heterointerface therein Jun. 28, 1994
5311044 Avalanche photomultiplier tube May. 10, 1994
5308995 Semiconductor strained SL APD apparatus May. 3, 1994
5302838 Multi-quantum well injection mode device Apr. 12, 1994
5288989 Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area Feb. 22, 1994
5272364 Semiconductor photodetector device with short lifetime region Dec. 21, 1993
5260560 Photoelectric transfer device Nov. 9, 1993
5233209 Guard ring structure with graded Be implantation Aug. 3, 1993
5204539 Avalanche photodiode with hetero-periodical structure Apr. 20, 1993
5198682 Multiple quantum well superlattice infrared detector with graded conductive band Mar. 30, 1993
5179430 Planar type heterojunction avalanche photodiode Jan. 12, 1993
5144381 Semiconductor light detector utilizing an avalanche effect and having an improved guard ring structure Sep. 1, 1992
5057891 Planar heterojunction avalanche photodiode Oct. 15, 1991
5001335 Semiconductor photodetector device and method of manufacturing the same Mar. 19, 1991
4984032 Semiconductor photodiode Jan. 8, 1991
4982255 Avalanche photodiode Jan. 1, 1991
4974061 Planar type heterostructure avalanche photodiode Nov. 27, 1990
4949144 Semiconductor photo-detector having a two-stepped impurity profile Aug. 14, 1990
4914494 Avalanche photodiode with central zone in active and absorptive layers Apr. 3, 1990
4876209 Method of making avalanche photodiode Oct. 24, 1989

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