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Class Information
Number: 257/183
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Heterojunction device
Description: Subject matter wherein the active solid-state device contains a heterojunction, i.e., a boundary between different regions, one of which is made of a material that differs from that of the other region.










Sub-classes under this class:

Class Number Class Name Patents
257/199 Avalanche diode (e.g., so-called "zener" diode having breakdown voltage greater than 6 volts, including heterojunction impatt type microwave diodes) 142
257/201 Between different group iv-vi or ii-vi or iii-v compounds other than gaas/gaalas 520
257/197 Bipolar transistor 923
257/196 Both semiconductors of the heterojunction are the same conductivity type (i.e., either n or p) 104
257/183.1 Charge transfer device 71
257/192 Field effect transistor 1,445
257/191 Having graded composition 361
257/200 Heterojunction formed between semiconductor materials which differ in that they belong to different periodic table groups (e.g., ge (group iv) - gaas (group iii-v) or inp (group iii-v) - cdte (group ii-vi)) 666
257/184 Light responsive structure 881
257/190 With lattice constant mismatch (e.g., with buffer layer to accommodate mismatch) 754


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8710489 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same Apr. 29, 2014
8692288 Heterojunction bipolar transistors and methods of manufacture Apr. 8, 2014
8692289 Fast turn on silicon controlled rectifiers for ESD protection Apr. 8, 2014
8686474 III-V compound semiconductor epitaxy from a non-III-V substrate Apr. 1, 2014
8686472 Semiconductor substrate, electronic device and method for manufacturing semiconductor substrate Apr. 1, 2014
8686473 Apparatus and method for reducing the interface resistance in GaN heterojunction FETs Apr. 1, 2014
8674337 Gallium nitride based light emitting diode and fabrication method thereof Mar. 18, 2014
8674382 Semiconductor light emitting device comprising heterojunction Mar. 18, 2014
8674405 Gallium--nitride-on-diamond wafers and devices, and methods of manufacture Mar. 18, 2014
8653558 Semiconductor device and method of making Feb. 18, 2014
8653563 Semiconductor device Feb. 18, 2014
8653562 Structure of a high electron mobility transistor Feb. 18, 2014
8648391 SiGe heterojunction bipolar transistor with an improved breakdown voltage-cutoff frequency product Feb. 11, 2014
8637334 High brightness light emitting diode covered by zinc oxide layers on multiple surfaces grown in low temperature aqueous solution Jan. 28, 2014
8637901 Low-defect density gallium nitride semiconductor structures and devices thereof Jan. 28, 2014
8629480 Hetero-junction tunneling transistor Jan. 14, 2014
8592793 Electrode diffusions in two-terminal non-volatile memory devices Nov. 26, 2013
8592862 Gallium nitride semiconductor structures with compositionally-graded transition layer Nov. 26, 2013
8592865 Overvoltage tolerant HFETs Nov. 26, 2013
8587092 Semiconductor device and manufacturing method of the same Nov. 19, 2013
8587032 Transistor with high electron mobility and inhomogeneous layer resistance of the guide channel Nov. 19, 2013
8575624 Semiconductor device Nov. 5, 2013
8575659 Carbon-beryllium combinationally doped semiconductor Nov. 5, 2013
8563984 Semiconductor device Oct. 22, 2013
8564022 Power device and method for manufacturing the same Oct. 22, 2013
8552469 Semiconductor device Oct. 8, 2013
8541818 Semiconductor heterostructure diodes Sep. 24, 2013
8536618 Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays Sep. 17, 2013
8530932 Replacement spacer for tunnel FETS Sep. 10, 2013
8525225 Semiconductor device Sep. 3, 2013
8507949 Semiconductor device Aug. 13, 2013
8507364 N-type group III nitride-based compound semiconductor and production method therefor Aug. 13, 2013
8497527 Device having active region with lower electron concentration Jul. 30, 2013
8482033 High throughput epitaxial liftoff for releasing multiple semiconductor device layers from a single base substrate Jul. 9, 2013
8482037 Gated AlGaN/GaN Schottky device Jul. 9, 2013
8455922 Programmable gate III-nitride semiconductor device Jun. 4, 2013
8450774 High performance power switch May. 28, 2013
8445941 Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device May. 21, 2013
8441084 Horizontal polysilicon-germanium heterojunction bipolar transistor May. 14, 2013
8426939 Semiconductor device and method for manufacturing of the same Apr. 23, 2013
8426883 Light emitting device, method of manufacturing the light emitting device, light emitting device package, and lighting unit Apr. 23, 2013
8395188 Silicon-germanium heterojunction bipolar transistor Mar. 12, 2013
8389348 Mechanism of forming SiC crystalline on Si substrates to allow integration of GaN and Si electronics Mar. 5, 2013
8390027 Gallium nitride semiconductor device and manufacturing method thereof Mar. 5, 2013
8373245 2DEG Schottky diode formed in nitride material with a composite Schottky/ohmic electrode structure and method of making the same Feb. 12, 2013
8368143 Strained thin body semiconductor-on-insulator substrate and device Feb. 5, 2013
8357849 Organic photosensitive devices Jan. 22, 2013
8350272 Semiconductor device Jan. 8, 2013
8344417 Gallium nitride semiconductor structures with compositionally-graded transition layer Jan. 1, 2013
8344359 Transistor having thermo electron cooling Jan. 1, 2013

1 2 3 4 5 6 7 8 9










 
 
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