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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.

Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
4797716 Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields Jan. 10, 1989
4771326 Composition double heterojunction transistor Sep. 13, 1988
4758870 Semiconductor device Jul. 19, 1988
4704785 Process for making a buried conductor by fusing two wafers Nov. 10, 1987
4616241 Superlattice optical device Oct. 7, 1986
4607272 Electro-optical SLS devices for operating at new wavelength ranges Aug. 19, 1986
4558336 MBE Growth technique for matching superlattices grown on GaAs substrates Dec. 10, 1985
4141025 Semiconductor structure sensitive to pressure Feb. 20, 1979

1 2 3 4 5 6 7 8 9

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