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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.










Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
5396082 Semiconductor substrate and device with a surface layer structure Mar. 7, 1995
5388117 Polarization insensitive semiconductor optical amplifier and an optical communication system using the same Feb. 7, 1995
5373167 Opto-electronic device Dec. 13, 1994
5373166 Modulated strain heterostructure light emitting device Dec. 13, 1994
5369292 Avalanche photodiode having a multiplication layer with superlattice Nov. 29, 1994
5362974 Group II-VI material semiconductor optical device with strained multiquantum barriers Nov. 8, 1994
5357119 Field effect devices having short period superlattice structures using Si and Ge Oct. 18, 1994
5349201 NPN heterojunction bipolar transistor including antimonide base formed on semi-insulating indium phosphide substrate Sep. 20, 1994
5339325 Strained multiple quantum well semiconductor laser and a method for producing the same Aug. 16, 1994
5315430 Strained layer Fabry-Perot device May. 24, 1994
5313073 Light detector using intersub-valence band transitions with strained barriers May. 17, 1994
5308995 Semiconductor strained SL APD apparatus May. 3, 1994
5306924 Semiconductor device with strained-layer superlattice Apr. 26, 1994
5298108 Serpentine superlattice methods and devices Mar. 29, 1994
5299216 Radiation-emitting semiconductor diode Mar. 29, 1994
5296721 Strained interband resonant tunneling negative resistance diode Mar. 22, 1994
5294808 Pseudomorphic and dislocation free heteroepitaxial structures Mar. 15, 1994
5283444 Increased well depth hact using a strained layer superlattice Feb. 1, 1994
5272712 Semiconductor laser device Dec. 21, 1993
5262660 High power pseudomorphic gallium arsenide high electron mobility transistors Nov. 16, 1993
5263040 Strained quantum well laser diode Nov. 16, 1993
5257276 Strained layer InP/InGaAs quantum well laser Oct. 26, 1993
5216262 Quantum well structures useful for semiconductor devices Jun. 1, 1993
5190891 Method for fabricating a semiconductor laser device in which the P-type clad layer and the active layer are grown at different rates Mar. 2, 1993
5181086 Strained superlattice semiconductor structure Jan. 19, 1993
5155738 Semiconductor laser elements Oct. 13, 1992
5132981 Semiconductor optical device Jul. 21, 1992
5117469 Polarization-dependent and polarization-diversified opto-electronic devices using a strained quantum well May. 26, 1992
5090790 Polarization-independent semiconductor waveguide Feb. 25, 1992
5068867 Coupled quantum well strained superlattice structure and optically bistable semiconductor laser incorporating the same Nov. 26, 1991
5065205 Long wavelength, high gain InAsSb strained-layer superlattice photoconductive detectors Nov. 12, 1991
5060030 Pseudomorphic HEMT having strained compensation layer Oct. 22, 1991
5057880 Semiconductor device having a heteroepitaxial substrate Oct. 15, 1991
5045894 Compound semiconductor light emitting device Sep. 3, 1991
5031007 SLS complementary logic devices with increase carrier mobility Jul. 9, 1991
5012304 Semiconductor devices having strain-induced lateral confinement of charge carriers Apr. 30, 1991
5001521 Semiconductor substrate including strained layer superlattice structure layer Mar. 19, 1991
4984242 GaAs/AlGaAs heterostructure laser containing indium Jan. 8, 1991
4963949 Substrate structures for InP-based devices Oct. 16, 1990
4952792 Devices employing internally strained asymmetric quantum wells Aug. 28, 1990
4947223 Semiconductor devices incorporating multilayer interference regions Aug. 7, 1990
4929984 Resonant tunnelling barrier structure device May. 29, 1990
4927471 Semiconductor substrate comprising wafer substrate and compound semiconductor layer May. 22, 1990
4928154 Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers May. 22, 1990
4897699 Group III-V compound based optoelectronic device on silicon substrate Jan. 30, 1990
4866489 Semiconductor device Sep. 12, 1989
4862228 High mobility semiconductor devices Aug. 29, 1989
4857972 Impatt diode Aug. 15, 1989
4835583 Semiconductor device having strained superlattice buffer layers with In-doped GaAs substrate May. 30, 1989
4827320 Semiconductor device with strained InGaAs layer May. 2, 1989

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