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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.










Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
5825796 Extended wavelength strained layer lasers having strain compensated layers Oct. 20, 1998
5821134 Method of manufacturing an optoelectronic device Oct. 13, 1998
5793054 Gallium nitride type compound semiconductor light emitting element Aug. 11, 1998
5789760 Multiquantum barrier Schottky junction device Aug. 4, 1998
5780867 Broadband light-emitting diode Jul. 14, 1998
5773853 Compound semiconductor device Jun. 30, 1998
5764842 Semiconductor guided-wave optical device and method of fabricating thereof Jun. 9, 1998
5757023 Fabrication of quantum well polarization independent active devices May. 26, 1998
5753933 Optical semiconductor device May. 19, 1998
5739543 Optical semiconductive device with inplanar compressive strain Apr. 14, 1998
5734670 Semiconductor device, semiconductor laser, and high electron mobility transistor Mar. 31, 1998
5719895 Extended wavelength strained layer lasers having short period superlattices Feb. 17, 1998
5701327 Saturable Bragg reflector structure and process for fabricating the same Dec. 23, 1997
5698863 Optically controlled light modulator device Dec. 16, 1997
5689123 III-V aresenide-nitride semiconductor materials and devices Nov. 18, 1997
5671242 Strained quantum well structure Sep. 23, 1997
5659180 Heterojunction interband tunnel diodes with improved P/V current ratios Aug. 19, 1997
5636236 Semiconductor laser Jun. 3, 1997
5625204 Compound semiconductors and a method for thin film growth Apr. 29, 1997
5608230 Strained superlattice semiconductor photodetector having a side contact structure Mar. 4, 1997
5606176 Strained quantum well structure having variable polarization dependence and optical device including the strained quantum well structure Feb. 25, 1997
5574289 Semiconductor optical integrated device and light receiver using said device Nov. 12, 1996
5572043 Schottky junction device having a Schottky junction of a semiconductor and a metal Nov. 5, 1996
5565690 Method for doping strained heterojunction semiconductor devices and structure Oct. 15, 1996
5561301 Opto-semiconductor device with piezoelectric Oct. 1, 1996
5559343 Semiconductor device with metallic precipitate and its manufacture Sep. 24, 1996
5559818 Semiconductor laser device Sep. 24, 1996
5550387 Superlattice quantum well material Aug. 27, 1996
5548128 Direct-gap germanium-tin multiple-quantum-well electro-optical devices on silicon or germanium substrates Aug. 20, 1996
5536948 Infrared detector element substrate with superlattice layers Jul. 16, 1996
5532510 Reverse side etching for producing layers with strain variation Jul. 2, 1996
5530713 Strained layer InGaAs quantum well semiconductor laser on GaAs substrate with quantum well-barrier layer interface structure Jun. 25, 1996
5521935 Strained superlattice light emitting device May. 28, 1996
5521397 Optical device having quantum well structure and barrier layers May. 28, 1996
5521404 Group III-V interdiffusion prevented hetero-junction semiconductor device May. 28, 1996
5506418 Electromagnetic wave detector with quantum well structure Apr. 9, 1996
5497012 Unipolar band minima devices Mar. 5, 1996
5495115 Semiconductor crystalline laminate structure, forming method of the same, and semiconductor device employing the same Feb. 27, 1996
5491710 Strain-compensated multiple quantum well laser structures Feb. 13, 1996
5489786 Current-controlled resonant tunneling device Feb. 6, 1996
5488231 Metal/semiconductor junction Schottky diode optical device using a distortion grown layer Jan. 30, 1996
5488507 Semiconductor optical amplifier having reduced polarization dependence Jan. 30, 1996
5483547 Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature Jan. 9, 1996
5473173 Quantum well structure having differentially strained quantum well layers Dec. 5, 1995
5473174 III-V compound semiconductor device formed on silicon substrate Dec. 5, 1995
5471068 Semiconductor photodetector using avalanche multiplication and strained layers Nov. 28, 1995
5442205 Semiconductor heterostructure devices with strained semiconductor layers Aug. 15, 1995
5436469 Band minima transistor Jul. 25, 1995
5416337 Hetero-superlattice PN junctions May. 16, 1995
5412225 Tunable heavy and light hole coupled bands in variable-strain quantum well semi-conductor heterostructure for novel opto-electronic devices May. 2, 1995

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