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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.

Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6495852 Gallium nitride group compound semiconductor photodetector Dec. 17, 2002
6486491 Semiconductor device Nov. 26, 2002
6476411 Intersubband light emitting element Nov. 5, 2002
6472695 Increased lateral oxidation rate of aluminum indium arsenide Oct. 29, 2002
6455377 Method to form very high mobility vertical channel transistor by selective deposition of SiGe or multi-quantum wells (MQWs) Sep. 24, 2002
6452215 Semiconductor light emitting devices Sep. 17, 2002
6437363 Semiconductor photonic device Aug. 20, 2002
6437361 Semiconductor device and method of using the same Aug. 20, 2002
6417526 Semiconductor device having a rectifying junction and method of manufacturing same Jul. 9, 2002
6407405 p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals Jun. 18, 2002
6407406 Semiconductor device and method of manufacturing the same Jun. 18, 2002
6407407 Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor Jun. 18, 2002
6403975 Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates Jun. 11, 2002
6380552 Low turn-on voltage InP Schottky device and method Apr. 30, 2002
6380551 Optical function device with photonic band gap and/or filtering characteristics Apr. 30, 2002
6350993 High speed composite p-channel Si/SiGe heterostructure for field effect devices Feb. 26, 2002
6326650 Method of forming a semiconductor structure Dec. 4, 2001
6326667 Semiconductor devices and methods for producing semiconductor devices Dec. 4, 2001
6288410 Semiconductor optical device with tensile-strained quantum well structure Sep. 11, 2001
6281519 Quantum semiconductor memory device including quantum dots Aug. 28, 2001
6275321 Polarization-insensitive optical modulators Aug. 14, 2001
6232138 Relaxed InxGa(1-x)as buffers May. 15, 2001
6229152 Strain compensated indium galium arsenide quantum well photoconductors with high indium content extended wavelength operation May. 8, 2001
6229151 Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency May. 8, 2001
6222200 Photodetector with spectrally extended responsivity Apr. 24, 2001
6207973 Light emitting devices with layered III-V semiconductor structures Mar. 27, 2001
6184547 Field effect transistor and method of fabricating the same Feb. 6, 2001
6154475 Silicon-based strain-symmetrized GE-SI quantum lasers Nov. 28, 2000
6127691 Semiconductor laser device Oct. 3, 2000
6075254 Polarization insensitive/independent semiconductor waveguide modulator using tensile stressors Jun. 13, 2000
6044100 Lateral injection VCSEL Mar. 28, 2000
6040938 Semiconductor optical amplifier Mar. 21, 2000
6037604 Two-mode InGaSb/GaSb strained-layer superlattice infrared photodetector Mar. 14, 2000
5982531 Semiconductor optical amplifier Nov. 9, 1999
5977564 Semiconductor device Nov. 2, 1999
5960018 Extended wavelength strained layer lasers having strain compensated layers Sep. 28, 1999
5959308 Epitaxial layer on a heterointerface Sep. 28, 1999
5953362 Strain induce control of polarization states in vertical cavity surface emitting lasers and method of making same Sep. 14, 1999
5952673 Optical semiconductor device including a multiple quantum well structure of an AlGaInAs/InP system Sep. 14, 1999
5952672 Semiconductor device and method for fabricating the same Sep. 14, 1999
5929462 Semiconductor optical device having a strained quantum well structure Jul. 27, 1999
5920079 Semiconductive light-emitting device having strained MQW with AlGaInAs barriers Jul. 6, 1999
5907161 Semiconductor device including doped spontaneously formed superlattice layer May. 25, 1999
5886361 Optoelectronic component having a modulation-doped layer structure Mar. 23, 1999
5880491 SiC/111-V-nitride heterostructures on SiC/SiO.sub.2 /Si for optoelectronic devices Mar. 9, 1999
5877510 Spin polarized electron semiconductor source and apparatus utilizing the same Mar. 2, 1999
5841152 Optical semiconductor device provided with strained quantum well layer formed on a ternary compound semiconductor substrate Nov. 24, 1998
5834792 Articles comprising doped semiconductor material Nov. 10, 1998
5831277 III-nitride superlattice structures Nov. 3, 1998
5831296 Semiconductor device Nov. 3, 1998

1 2 3 4 5 6 7 8 9

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