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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.

Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
6949761 Structure for and method of fabricating a high-mobility field-effect transistor Sep. 27, 2005
6946318 Method of forming GE photodetectors Sep. 20, 2005
6943391 Modification of carrier mobility in a semiconductor device Sep. 13, 2005
6933518 RF circuits including transistors having strained material layers Aug. 23, 2005
6921913 Strained-channel transistor structure with lattice-mismatched zone Jul. 26, 2005
6914256 Optoelectronic devices having arrays of quantum-dot compound semiconductor superlattices therein Jul. 5, 2005
6909108 Structure of quantum dot light emitting diode and method of fabricating the same Jun. 21, 2005
6870179 Increasing stress-enhanced drive current in a MOS transistor Mar. 22, 2005
6867428 Strained silicon NMOS having silicon source/drain extensions and method for its fabrication Mar. 15, 2005
6858864 Devices with optical gain in silicon Feb. 22, 2005
6859474 Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system Feb. 22, 2005
6858863 Semiconductor laser device having a high characteristic temperature Feb. 22, 2005
6855963 Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate Feb. 15, 2005
6855948 Low base-emitter voltage heterojunction bipolar transistor Feb. 15, 2005
6852602 Semiconductor crystal film and method for preparation thereof Feb. 8, 2005
6847098 Non-floating body device with enhanced performance Jan. 25, 2005
6831292 Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same Dec. 14, 2004
6815707 Field-effect type semiconductor device for power amplifier Nov. 9, 2004
6812495 Ge photodetectors Nov. 2, 2004
6787793 Strained Si device with first SiGe layer with higher Ge concentration being relaxed to have substantially same lattice constant as second SiGe layer with lower Ge concentration Sep. 7, 2004
6784450 Graded base GaAsSb for high speed GaAs HBT Aug. 31, 2004
6785311 Optical semiconductor device Aug. 31, 2004
6774390 Semiconductor device Aug. 10, 2004
6747357 Dielectric device having multi-layer oxide artificial lattice with lattice directional feature Jun. 8, 2004
6727550 Integrated circuit device Apr. 27, 2004
6724017 Method for automatic organization of microstructures or nanostructures and related device obtained Apr. 20, 2004
6713810 Non-volatile devices, and electronic systems comprising non-volatile devices Mar. 30, 2004
6707132 High performance Si-Ge device module with CMOS technology Mar. 16, 2004
6696313 Method for aligning quantum dots and semiconductor device fabricated by using the same Feb. 24, 2004
6680494 Ultra high speed heterojunction bipolar transistor having a cantilevered base Jan. 20, 2004
6653166 Semiconductor device and method of making same Nov. 25, 2003
6608330 Light emitting device Aug. 19, 2003
6605498 Semiconductor transistor having a backfilled channel material Aug. 12, 2003
6600170 CMOS with strained silicon channel NMOS and silicon germanium channel PMOS Jul. 29, 2003
6593641 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits Jul. 15, 2003
6583449 Semiconductor device and method of forming a semiconductor device Jun. 24, 2003
6583436 Strain-engineered, self-assembled, semiconductor quantum dot lattices Jun. 24, 2003
6580099 Nitride semiconductor light-emitting devices Jun. 17, 2003
6573527 Quantum semiconductor device including quantum dots and a fabrication process thereof Jun. 3, 2003
6573528 Detector diode with internal calibration structure Jun. 3, 2003
6573526 Single electron tunneling transistor having multilayer structure Jun. 3, 2003
6569704 Group III-V semiconductor light emitting devices with reduced piezoelectric fields and increased efficiency May. 27, 2003
6566677 Nitride-based semiconductor device and manufacturing method thereof May. 20, 2003
6559469 Ferroelectric and high dielectric constant transistors May. 6, 2003
6555839 Buried channel strained silicon FET using a supply layer created through ion implantation Apr. 29, 2003
6545801 Semiconductor optical amplifier performing polarization-independent operation Apr. 8, 2003
6541788 Mid infrared and near infrared light upconverter using self-assembled quantum dots Apr. 1, 2003
6525338 Semiconductor substrate, field effect transistor, method of forming SiGe layer and method of forming strained Si layer using same, and method of manufacturing field effect transistor Feb. 25, 2003
6515306 Light emitting diode Feb. 4, 2003
6501102 Light emitting diode (LED) device that produces white light by performing phosphor conversion on all of the primary radiation emitted by the light emitting structure of the LED device Dec. 31, 2002

1 2 3 4 5 6 7 8 9

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