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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.










Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
7265420 Semiconductor substrate layer configured for inducement of compressive or expansive force Sep. 4, 2007
7259388 Strained-semiconductor-on-insulator device structures Aug. 21, 2007
7247876 Three dimensional programmable device and method for fabricating the same Jul. 24, 2007
7247534 Silicon device on Si:C-OI and SGOI and method of manufacture Jul. 24, 2007
7244958 Integration of strained Ge into advanced CMOS technology Jul. 17, 2007
7227175 Semiconductor device with different lattice properties Jun. 5, 2007
7227176 Etch stop layer system Jun. 5, 2007
7223994 Strained Si on multiple materials for bulk or SOI substrates May. 29, 2007
7214972 Strained silicon-channel MOSFET using a damascene gate process May. 8, 2007
7208754 Strained silicon structure Apr. 24, 2007
7202494 FINFET including a superlattice Apr. 10, 2007
7187059 Compressive SiGe <110> growth and structure of MOSFET devices Mar. 6, 2007
7187179 Wiring test structures for determining open and short circuits in semiconductor devices Mar. 6, 2007
7183613 Method and structure for enhancing both NMOSFET and PMOSFET performance with a stressed film Feb. 27, 2007
7177061 Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability Feb. 13, 2007
7170084 Strained silicon MOSFET having improved source/drain extension dopant diffusion resistance and method for its fabrication Jan. 30, 2007
7161169 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain Jan. 9, 2007
7154118 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Dec. 26, 2006
7145166 CMOSFET with hybrid strained channels Dec. 5, 2006
7145167 High speed Ge channel heterostructures for field effect devices Dec. 5, 2006
7138649 Dual-channel CMOS transistors with differentially strained channels Nov. 21, 2006
7138650 Semiconductor substrate, field-effect transistor, and their manufacturing method of the same Nov. 21, 2006
7135728 Large-area nanoenabled macroelectronic substrates and uses therefor Nov. 14, 2006
7129517 Semiconductor device with different lattice properties Oct. 31, 2006
7122734 Isoelectronic surfactant suppression of threading dislocations in metamorphic epitaxial layers Oct. 17, 2006
7122813 Device for generating THz radiation Oct. 17, 2006
7115896 Semiconductor structures for gallium nitride-based devices Oct. 3, 2006
7109516 Strained-semiconductor-on-insulator finFET device structures Sep. 19, 2006
7102153 Strained silicon forming method with reduction of threading dislocation density Sep. 5, 2006
7098471 Semiconductor quantum well devices and methods of making the same Aug. 29, 2006
7081639 Semiconductor photodetection device and fabrication process thereof Jul. 25, 2006
7078723 Microelectronic device with depth adjustable sill Jul. 18, 2006
7061014 Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film Jun. 13, 2006
7053400 Semiconductor device based on Si-Ge with high stress liner for enhanced channel carrier mobility May. 30, 2006
7049627 Semiconductor heterostructures and related methods May. 23, 2006
7045813 Semiconductor device including a superlattice with regions defining a semiconductor junction May. 16, 2006
7042019 Gallium-nitride based multi-quantum well light-emitting diode n-type contact layer structure May. 9, 2006
7038233 Semiconductor optical devices and optical modules May. 2, 2006
7038234 Thermoelectric module with Si/SiGe and B4C/B9C super-lattice legs May. 2, 2006
7023011 Devices with optical gain in silicon Apr. 4, 2006
7019326 Transistor with strain-inducing structure in channel Mar. 28, 2006
7019325 Broadband light emitting device Mar. 28, 2006
7009224 Metamorphic long wavelength high-speed photodiode Mar. 7, 2006
7005668 Method for improving hole mobility enhancement in strained silicon p-type MOSFETS Feb. 28, 2006
6995430 Strained-semiconductor-on-insulator device structures Feb. 7, 2006
6982433 Gate-induced strain for MOS performance improvement Jan. 3, 2006
6973109 Semiconductor laser device having strain buffer layer between compressive-strain quantum well layer and tensile-strain barrier layer Dec. 6, 2005
6960814 Reflecting device and method of fabricating the same Nov. 1, 2005
6960781 Shallow trench isolation process Nov. 1, 2005
6952018 Semiconductor device including band-engineered superlattice Oct. 4, 2005

1 2 3 4 5 6 7 8 9










 
 
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