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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.










Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
7612363 N-type group III nitride semiconductor stacked layer structure Nov. 3, 2009
7598515 Semiconductor device including a strained superlattice and overlying stress layer and related methods Oct. 6, 2009
7595499 Method and system for fabricating strained layers for the manufacture of integrated circuits Sep. 29, 2009
7592619 Epitaxy layer and method of forming the same Sep. 22, 2009
7592653 Stress relaxation for top of transistor gate Sep. 22, 2009
7586177 Semiconductor-on-insulator silicon wafer Sep. 8, 2009
7582891 Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon Sep. 1, 2009
7579617 Semiconductor device and production method thereof Aug. 25, 2009
7569442 High speed lateral heterojunction MISFETS realized by 2-dimensional bandgap engineering and methods thereof Aug. 4, 2009
7564096 Scalable power field effect transistor with improved heavy body structure and method of manufacture Jul. 21, 2009
7554110 MOS devices with partial stressor channel Jun. 30, 2009
7541610 LED device with re-emitting semiconductor construction and converging optical element Jun. 2, 2009
7538339 Scalable strained FET device and method of fabricating the same May. 26, 2009
7514317 Strained semiconductor device and method of making same Apr. 7, 2009
7511348 MOS transistors with selectively strained channels Mar. 31, 2009
7491966 Semiconductor substrate and process for producing it Feb. 17, 2009
7485908 Insulated gate silicon nanowire transistor and method of manufacture Feb. 3, 2009
7476579 Method and structure for enhancing both nMOSFET and pMOSFET performance with a stressed film Jan. 13, 2009
7473591 Transistor with strain-inducing structure in channel Jan. 6, 2009
7462525 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain Dec. 9, 2008
7462859 Quantum well design for a coherent, single-photon detector with spin resonant transistor Dec. 9, 2008
7459719 Superlattice optical semiconductor device where each barrier layer has high content of group III elements in center portion and low content near well layer Dec. 2, 2008
7453108 Semiconductor device that is advantageous in complex stress engineering and method of manufacturing the same Nov. 18, 2008
7443561 Deep quantum well electro-absorption modulator Oct. 28, 2008
7436026 Semiconductor device comprising a superlattice channel vertically stepped above source and drain regions Oct. 14, 2008
7429748 High speed GE channel heterostructures for field effect devices Sep. 30, 2008
7427554 Manufacturing strained silicon substrates using a backing material Sep. 23, 2008
7423283 Strain-silicon CMOS using etch-stop layer and method of manufacture Sep. 9, 2008
7420201 Strained-semiconductor-on-insulator device structures with elevated source/drain regions Sep. 2, 2008
7420202 Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device Sep. 2, 2008
7415185 Buried-waveguide-type light receiving element and manufacturing method thereof Aug. 19, 2008
7414259 Strained germanium-on-insulator device structures Aug. 19, 2008
7413970 Process of forming an electronic device including a semiconductor fin Aug. 19, 2008
7405422 Epitaxial and polycrystalline growth of Si.sub.1-x-yGe.sub.xC.sub.y and Si.sub.1-yC.sub.y alloy layers on Si by UHV-CVD Jul. 29, 2008
7391047 System for forming a strained layer of semiconductor material Jun. 24, 2008
7375368 Superlattice for fabricating nanowires May. 20, 2008
7368766 Semiconductor light emitting element and method for fabricating the same May. 6, 2008
7368308 Methods of fabricating semiconductor heterostructures May. 6, 2008
7365357 Strain inducing multi-layer cap Apr. 29, 2008
7358523 Method and structure for deep well structures for long wavelength active regions Apr. 15, 2008
7351994 Noble high-k device Apr. 1, 2008
7352008 Heterostructure with rear-face donor doping Apr. 1, 2008
7348201 Creation of anisotropic strain in semiconductor quantum well Mar. 25, 2008
7339205 Gallium nitride materials and methods associated with the same Mar. 4, 2008
7314790 Enhancement of electron and hole mobilities in <110> Si under biaxial compressive strain Jan. 1, 2008
7307273 Control of strain in device layers by selective relaxation Dec. 11, 2007
7294848 Light-emitting Group IV semiconductor devices Nov. 13, 2007
7279700 Semiconductor substrate and process for producing it Oct. 9, 2007
7279699 Integrated circuit comprising a waveguide having an energy band engineered superlattice Oct. 9, 2007
7279698 System and method for an optical modulator having a quantum well Oct. 9, 2007

1 2 3 4 5 6 7 8 9










 
 
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