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Class Information
Number: 257/18
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > Strained layer superlattice
Description: Subject matter wherein the crystalline lattice characteristics of adjacent thin active superlattice layers are mismatched so that alternate layers are in elastic tension or compression.










Sub-classes under this class:

Class Number Class Name Patents
257/19 Si x ge 1-x 419


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8080820 Apparatus and methods for improving parallel conduction in a quantum well device Dec. 20, 2011
8063397 Semiconductor light-emitting structure and graded-composition substrate providing yellow-green light emission Nov. 22, 2011
8039869 Gallium nitride device substrate containing a lattice parameter altering element Oct. 18, 2011
8013324 Structurally stabilized semiconductor nanowire Sep. 6, 2011
7989233 Semiconductor nanowire with built-in stress Aug. 2, 2011
7981710 Light emitting device and manufacturing method Jul. 19, 2011
7973337 Source/drain strained layers Jul. 5, 2011
7968414 Semiconductor device and production method thereof Jun. 28, 2011
7955881 Method of fabricating quantum well structure Jun. 7, 2011
7939852 Transistor device having asymmetric embedded strain elements and related manufacturing method May. 10, 2011
7915148 Method of producing a tensioned layer on a substrate Mar. 29, 2011
7915640 Heterojunction semiconductor device and method of manufacturing Mar. 29, 2011
7902541 Semiconductor nanowire with built-in stress Mar. 8, 2011
7902008 Methods for fabricating a stressed MOS device Mar. 8, 2011
7888670 Nitride semiconductor light emitting device Feb. 15, 2011
7884352 Single-crystal semiconductor layer with heteroatomic macronetwork Feb. 8, 2011
7875521 Semiconductor device and production method thereof Jan. 25, 2011
7868337 Light emitting diode and method for manufacturing the same Jan. 11, 2011
7868317 MOS devices with partial stressor channel Jan. 11, 2011
7863139 Double gate FET and fabrication process Jan. 4, 2011
7847281 Semiconductor device with strain in channel region and its manufacture method Dec. 7, 2010
7821109 Stressed dielectric devices and methods of fabricating same Oct. 26, 2010
7812340 Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same Oct. 12, 2010
7800141 Electronic device including a semiconductor fin Sep. 21, 2010
7795609 Densely stacked and strain-compensated quantum dot active regions Sep. 14, 2010
7781771 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Aug. 24, 2010
7781777 Pn junction type group III nitride semiconductor light-emitting device Aug. 24, 2010
7781799 Source/drain strained layers Aug. 24, 2010
7768041 Multiple conduction state devices having differently stressed liners Aug. 3, 2010
7755080 Method for forming quantum dot, and quantum semiconductor device and method for fabricating the same Jul. 13, 2010
7755079 Strained-layer superlattice focal plane array having a planar structure Jul. 13, 2010
7750338 Dual-SiGe epitaxy for MOS devices Jul. 6, 2010
7737466 Semiconductor device and manufacturing method thereof Jun. 15, 2010
7723720 Methods and articles incorporating local stress for performance improvement of strained semiconductor devices May. 25, 2010
7714318 Electronic device including a transistor structure having an active region adjacent to a stressor layer May. 11, 2010
7705345 High performance strained silicon FinFETs device and method for forming same Apr. 27, 2010
7701072 Semiconductor device and manufacturing method therefor Apr. 20, 2010
7687798 Epitaxy with compliant layers of group-V species Mar. 30, 2010
7683362 Semiconductor device and production method thereof Mar. 23, 2010
7684455 Oscillator and imaging apparatus utilizing resonant tunneling diode structure Mar. 23, 2010
7659537 Field effect transistor Feb. 9, 2010
7649233 High performance transistor with a highly stressed channel Jan. 19, 2010
7646066 Double gate FET and fabrication process Jan. 12, 2010
7633103 Semiconductor device and methods for fabricating same Dec. 15, 2009
7629603 Strain-inducing semiconductor regions Dec. 8, 2009
7626244 Stressed dielectric devices and methods of fabricating same Dec. 1, 2009
7615454 Embedded stressed nitride liners for CMOS performance improvement Nov. 10, 2009
7615471 Method for producing a tensioned layer on a substrate, and a layer structure Nov. 10, 2009
7612366 Semiconductor device including a strained superlattice layer above a stress layer Nov. 3, 2009
7612364 MOS devices with source/drain regions having stressed regions and non-stressed regions Nov. 3, 2009

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