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Class Information
Number: 257/176
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With means to control triggering (e.g., gate electrode configuration, zener diode firing, dv/dt control, transient control by ferrite bead, etc.) > Located in an emitter-gate region
Description: Subject matter wherein the signal control mechanism is a transistor emitter junction with the gate region, and is used as the gate input.










Patents under this class:

Patent Number Title Of Patent Date Issued
7705368 Insulated gate type thyristor Apr. 27, 2010
7098488 Insulated gate bipolar transistor Aug. 29, 2006
6965129 Thyristor-based device having dual control ports Nov. 15, 2005
6963088 Semiconductor component Nov. 8, 2005
6013941 Bipolar transistor with collector surge voltage protection Jan. 11, 2000
5986290 Silicon controlled rectifier with reduced substrate current Nov. 16, 1999
5682044 Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure Oct. 28, 1997
4982261 Semiconductor device Jan. 1, 1991
4291329 Thyristor with continuous recombination center shunt across planar emitter-base junction Sep. 22, 1981
4286279 Multilayer semiconductor switching devices Aug. 25, 1981
4208669 Controllable semiconductor rectifier with interference potential compensation Jun. 17, 1980
4190853 Multilayer semiconductor switching devices Feb. 26, 1980
4163241 Multiple emitter and normal gate semiconductor switch Jul. 31, 1979
4089024 Semiconductor switching device May. 9, 1978
4063278 Semiconductor switch having sensitive gate characteristics at high temperatures Dec. 13, 1977
3967308 Semiconductor controlled rectifier Jun. 29, 1976











 
 
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