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Class Information
Number: 257/172
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With means to lower "on" voltage drop
Description: Subject matter wherein the regenerative active junction type switching device comprises means to lower the voltage drop across the main terminals when the switch is operated in the ON mode.










Patents under this class:

Patent Number Title Of Patent Date Issued
8710548 Semiconductor device and method for manufacturing the same Apr. 29, 2014
8178899 Semiconductor device and fabrication method of the semiconductor device May. 15, 2012
8148749 Trench-shielded semiconductor device Apr. 3, 2012
8120066 Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the same Feb. 21, 2012
7569867 Light-emitting device and method of making same Aug. 4, 2009
7414273 Two-dimensional silicon controlled rectifier Aug. 19, 2008
7291874 Laser dicing apparatus for a gallium arsenide wafer and method thereof Nov. 6, 2007
6849346 Electrode and thin film EL device including the same and methods of fabricating the same and display device and lighting system including the thin film EL device Feb. 1, 2005
6664572 Valve seal assemblies and methods Dec. 16, 2003
6452219 Insulated gate bipolar transistor and method of fabricating the same Sep. 17, 2002
6229196 Semiconductor device and fabrication method thereof May. 8, 2001
6111289 Semiconductor device Aug. 29, 2000
5973367 Multiple gated MOSFET for use in DC-DC converter Oct. 26, 1999
5923066 Field-effect-controllable semiconductor component Jul. 13, 1999
5874751 Insulated gate thyristor Feb. 23, 1999
5753943 Insulated gate type field effect transistor and method of manufacturing the same May. 19, 1998
5751023 Semiconductor device and method of manufacturing the same May. 12, 1998
5751024 Insulated gate semiconductor device May. 12, 1998
5710445 Gate turn-off thyristor for high blocking voltage and small component thickness Jan. 20, 1998
5621226 Metal-insulator semiconductor gate controlled thyristor Apr. 15, 1997
5504351 Insulated gate semiconductor device Apr. 2, 1996
5491351 Gate turn-off thyristor Feb. 13, 1996
5459339 Double gate semiconductor device and control device thereof Oct. 17, 1995
5378903 Semiconductor device with low on-voltage and large controllable turn-off current Jan. 3, 1995
5309002 Semiconductor device with protruding portion May. 3, 1994
5273917 Method for manufacturing a conductivity modulation MOSFET Dec. 28, 1993
5200632 Conductivity modulation MOSFET Apr. 6, 1993
4984049 Static induction thyristor Jan. 8, 1991
4975751 High breakdown active device structure with low series resistance Dec. 4, 1990
4967243 Power transistor structure with high speed integral antiparallel Schottky diode Oct. 30, 1990
4961100 Bidirectional field effect semiconductor device and circuit Oct. 2, 1990
4825270 Gate turn-off thyristor Apr. 25, 1989
4752818 Semiconductor device with multiple recombination center layers Jun. 21, 1988
4613767 Low forward-voltage drop SCR Sep. 23, 1986
4586070 Thyristor with abrupt anode emitter junction Apr. 29, 1986
4219832 Thyristor having low on-state voltage with low areal doping emitter region Aug. 26, 1980
4146906 Low forward voltage drop semiconductor device having polycrystalline layers of different resistivity Mar. 27, 1979
3990091 Low forward voltage drop thyristor Nov. 2, 1976
3984858 Semiconductor components Oct. 5, 1976











 
 
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