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Browse by Category: Main > Physics
Class Information
Number: 257/171
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With means to increase breakdown voltage > Surface feature (e.g., guard ring, groove, mesa, etc.) > Edge feature (e.g., beveled edge)
Description: Subject matter wherein the surface feature for increasing breakdown voltage is an edge feature (e.g., a beveled) as contrasted with a right angled edge.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8669166 Methods of thinning and/or dicing semiconducting substrates having integrated circuit products formed thereon Mar. 11, 2014
8587023 Guard rings with local coupling capacitance Nov. 19, 2013
8513703 Group III-nitride HEMT with multi-layered substrate having a second layer of one conductivity type touching a top surface of a first layers of different conductivity type and a method for form Aug. 20, 2013
8482032 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer Jul. 9, 2013
8466492 Semiconductor device with edge termination structure Jun. 18, 2013
8350366 Power semiconductor element with two-stage impurity concentration profile Jan. 8, 2013
8120059 Nitride semiconductor substrate and method of fabricating the same Feb. 21, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
8022438 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer Sep. 20, 2011
7939905 Electrostatic discharge protection method and device for semiconductor device including an electrostatic discharge protection element providing a discharge path of a surge current May. 10, 2011
7880260 Semiconductor device with a semiconductor body and method for its production Feb. 1, 2011
7859076 Edge termination for semiconductor device Dec. 28, 2010
7772677 Semiconductor device and method of forming the same having a junction termination structure with a beveled sidewall Aug. 10, 2010
7700970 Integrated power device having a start-up structure Apr. 20, 2010
7675088 Manufacturing method of thin film transistor array substrate Mar. 9, 2010
7645689 Gallium nitride-based light emitting device having ESD protection capacity and method for manufacturing the same Jan. 12, 2010
7550780 Chamfered freestanding nitride semiconductor wafer and method of chamfering nitride semiconductor wafer Jun. 23, 2009
7525178 Semiconductor device with capacitively coupled field plate Apr. 28, 2009
7462888 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device Dec. 9, 2008
7291899 Power semiconductor component Nov. 6, 2007
7288828 Metal oxide semiconductor transistor device Oct. 30, 2007
7154129 Semiconductor arrangement with a p-n transition and method for the production of a semiconductor arrangement Dec. 26, 2006
6967356 Vertical component with high-voltage strength Nov. 22, 2005
6727527 Reverse blocking IGBT Apr. 27, 2004
6696705 Power semiconductor component having a mesa edge termination Feb. 24, 2004
6649960 Synthetic free layer structure for MRAM devices Nov. 18, 2003
6600213 Semiconductor structure and package including a chip having chamfered edges Jul. 29, 2003
6459102 Peripheral structure for monolithic power device Oct. 1, 2002
6054727 Power semiconductor component Apr. 25, 2000
6020603 Semiconductor device with a beveled and chamfered outer peripheral portion Feb. 1, 2000
5773874 Semiconductor device having a mesa structure for surface voltage breakdown Jun. 30, 1998
5721449 Cam operated inverter bypass safety switch Feb. 24, 1998
5710442 Semiconductor device and method of manufacturing same Jan. 20, 1998
5587594 Semiconductor component having gate-turn-off thyristor and reduced thermal impairment Dec. 24, 1996
5475243 Semiconductor device including an IGBT and a current-regenerative diode Dec. 12, 1995
5284780 Method for increasing the electric strength of a multi-layer semiconductor component Feb. 8, 1994
5233209 Guard ring structure with graded Be implantation Aug. 3, 1993
5003368 Turn-off thyristor Mar. 26, 1991
4949147 Sensitive thyristor with integrated gate-cathode decoupling Aug. 14, 1990
4829348 Disconnectable power semiconductor component May. 9, 1989
4775883 Asymmetrical thyristor and method for producing same Oct. 4, 1988
4755861 Light-firable thyristor Jul. 5, 1988
4737834 Thyristor with controllable emitter short-circuit paths inserted in the emitter Apr. 12, 1988
4682198 Gate turn-off thyristor with integral capacitive anode Jul. 21, 1987
4642669 Semiconductor device having a blocking capability in only one direction Feb. 10, 1987
4639276 Method of making thyristor with a high tolerable bias voltage Jan. 27, 1987
4638553 Method of manufacture of semiconductor device Jan. 27, 1987
4623910 Semiconductor device Nov. 18, 1986
4622572 High voltage semiconductor device having an improved DV/DT capability and plasma spreading Nov. 11, 1986
4514747 Field controlled thyristor with double-diffused source region Apr. 30, 1985

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