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Class Information
Number: 257/17
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > With particular barrier dimension
Description: Subject matter wherein the superlattice has a specific quantum electronic potential barrier dimension (e.g., height or width).










Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
4819036 Semiconductor device Apr. 4, 1989
4816878 Negative resistance semiconductor device Mar. 28, 1989
4814837 Quantum well electron barrier diode Mar. 21, 1989
4806993 Method and device for rapid photo-detection by means of a super-lattice Feb. 21, 1989
4795225 Semiconductor optical switch Jan. 3, 1989
4794611 Semiconductor laser having superlattice structure Dec. 27, 1988
4788579 Semiconductor superlattice Nov. 29, 1988
4786957 Negative differential resistance element Nov. 22, 1988
4665412 Coupled heterostructure superlattice devices May. 12, 1987
4645707 Semiconductor devices Feb. 24, 1987
4644378 Semiconductor device for generating electromagnetic radiation Feb. 17, 1987
4620206 Semiconductor device Oct. 28, 1986
4590507 Variable gap devices May. 20, 1986
4578127 Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer Mar. 25, 1986
4546479 Semiconductor light-emitting device with layers having different band gaps Oct. 8, 1985
4438446 Double barrier double heterostructure laser Mar. 20, 1984
4205329 Periodic monolayer semiconductor structures grown by molecular beam epitaxy May. 27, 1980
4163238 Infrared semiconductor device with superlattice region Jul. 31, 1979
3982207 Quantum effects in heterostructure lasers Sep. 21, 1976

1 2 3 4 5 6 7 8 9










 
 
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