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Class Information
Number: 257/17
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice > With particular barrier dimension
Description: Subject matter wherein the superlattice has a specific quantum electronic potential barrier dimension (e.g., height or width).

Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8680506 Simultaneous modulation of quantum dot photoluminescence using orthogonal fluorescence resonance energy transfer (FRET) and charge transfer quenching (CTQ) Mar. 25, 2014
8674338 Semiconductor light emitting device Mar. 18, 2014
8669585 LED that has bounding silicon-doped regions on either side of a strain release layer Mar. 11, 2014
8669546 Nitride group semiconductor light emitting device including multiquantum well structure Mar. 11, 2014
8642991 Photosensitive quantum dot, composition comprising the same and method of forming quantum dot-containing pattern using the composition Feb. 4, 2014
8633092 Quantum well device Jan. 21, 2014
8624269 Radiation-emitting thin-film semiconductor chip and method of producing a radiation-emitting thin film semiconductor chip Jan. 7, 2014
8586965 Group III nitride semiconductor light-emitting device Nov. 19, 2013
8564067 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure Oct. 22, 2013
8558215 Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system Oct. 15, 2013
8530883 Manufacture of quantum dot-enabled solid-state light emitters Sep. 10, 2013
8471340 Silicon-on-insulator (SOI) structure configured for reduced harmonics and method of forming the structure Jun. 25, 2013
8455857 Nanoelectronic structure and method of producing such Jun. 4, 2013
8450717 Nanostructures and methods for manufacturing the same May. 28, 2013
8440996 Nitride semiconductor light emitting device and fabrication method thereof May. 14, 2013
8421485 Detection device and detection system using the same Apr. 16, 2013
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8410470 Core-shell quantum dot fluorescent fine particles Apr. 2, 2013
8389978 Two-shelf interconnect Mar. 5, 2013
8378334 Low power floating body memory cell based on low-bandgap-material quantum well Feb. 19, 2013
8362461 Quantum well device Jan. 29, 2013
8330141 Light-emitting device Dec. 11, 2012
8279904 Semiconductor light-emitting device Oct. 2, 2012
8247795 Interfused nanocrystals and method of preparing the same Aug. 21, 2012
8222648 Silicon carbide semiconductor device and method for producing the same Jul. 17, 2012
8164753 Alignment mark arrangement and alignment mark structure Apr. 24, 2012
8138495 Film stress management for MEMS through selective relaxation Mar. 20, 2012
8129711 Nitride semiconductor light emitting device and fabrication method thereof Mar. 6, 2012
8124989 Light optoelectronic device and forming method thereof Feb. 28, 2012
8124959 High hole mobility semiconductor device Feb. 28, 2012
8093583 Light emitting diode having barrier layer of superlattice structure Jan. 10, 2012
8058661 Semiconductor light emitting device Nov. 15, 2011
8058641 Copper blend I-VII compound semiconductor light-emitting devices Nov. 15, 2011
8049203 Nanoelectronic structure and method of producing such Nov. 1, 2011
8026508 Semiconductor device and method of fabricating the same Sep. 27, 2011
8013321 Composite comprising array of needle-like crystal, method for producing the same, photovoltaic conversion element, light emitting element, and capacitor Sep. 6, 2011
8008647 Nitride semiconductor device with superlattice active layer including barrier layers with different energy band gaps Aug. 30, 2011
7981710 Light emitting device and manufacturing method Jul. 19, 2011
7977666 Quantum dot infrared photodetector apparatus Jul. 12, 2011
7968868 Optical semiconductor device and manufacturing method of the same Jun. 28, 2011
7964866 Low power floating body memory cell based on low bandgap material quantum well Jun. 21, 2011
7947976 Controlled alignment of catalytically grown nanostructures in a large-scale synthesis process May. 24, 2011
7947972 Light emitting device May. 24, 2011
7940606 Signal detecting device and signal detecting method May. 10, 2011
7924107 Resonant tunneling structure Apr. 12, 2011
7888700 Quantum dot light emitting device Feb. 15, 2011
7812339 Method for making a semiconductor device including shallow trench isolation (STI) regions with maskless superlattice deposition following STI formation and related structures Oct. 12, 2010
7795609 Densely stacked and strain-compensated quantum dot active regions Sep. 14, 2010
7786467 Three-dimensional nanoscale crossbars Aug. 31, 2010
7781771 Bulk non-planar transistor having strained enhanced mobility and methods of fabrication Aug. 24, 2010

1 2 3 4 5 6 7 8 9

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