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Class Information
Number: 257/169
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With means to increase breakdown voltage > High resistivity base layer
Description: Subject matter wherein the means for increasing breakdown voltage includes a base (as contrasted with emitter or collector) layer which has a relatively high electrical resistivity.










Patents under this class:

Patent Number Title Of Patent Date Issued
8120040 Substrate for mounting IC chip, manufacturing method of substrate for mounting IC chip, device for optical communication, and manufacturing method of device for optical communication Feb. 21, 2012
8049308 Bond pad for low K dielectric materials and method for manufacture for semiconductor devices Nov. 1, 2011
7977705 Low-cost substrates having high-resistivity properties and methods for their manufacture Jul. 12, 2011
7192792 Method of changing an electrically programmable resistance cross point memory bit Mar. 20, 2007
7163854 Fabrication method of a semiconductor device Jan. 16, 2007
6967356 Vertical component with high-voltage strength Nov. 22, 2005
6943382 Pressed-contact type semiconductor device Sep. 13, 2005
6930352 Insulated gate semiconductor device Aug. 16, 2005
6677623 Bed structure underlying electrode pad of semiconductor device and method for manufacturing same Jan. 13, 2004
6614073 SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPP Sep. 2, 2003
6459102 Peripheral structure for monolithic power device Oct. 1, 2002
6448588 Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode Sep. 10, 2002
5710442 Semiconductor device and method of manufacturing same Jan. 20, 1998
5485024 Electrostatic discharge circuit Jan. 16, 1996
5455434 Thyristor with breakdown region Oct. 3, 1995
5424563 Apparatus and method for increasing breakdown voltage ruggedness in semiconductor devices Jun. 13, 1995
5352910 Semiconductor device with a buffer structure Oct. 4, 1994
5349212 Semiconductor device having thyristor structure Sep. 20, 1994
5312765 Method of fabricating three dimensional gallium arsenide microelectronic device May. 17, 1994
5274253 Semiconductor protection device against abnormal voltage Dec. 28, 1993
5001535 Static induction type thyristor Mar. 19, 1991
4939565 Semiconductor device Jul. 3, 1990
4639276 Method of making thyristor with a high tolerable bias voltage Jan. 27, 1987
4608590 High voltage dielectrically isolated solid-state switch Aug. 26, 1986
4602268 High voltage dielectrically isolated dual gate solid-state switch Jul. 22, 1986
4587656 High voltage solid-state switch May. 6, 1986
4587545 High voltage dielectrically isolated remote gate solid-state switch May. 6, 1986
4573065 Radial high voltage switch structure Feb. 25, 1986
4404580 Light activated semiconductor device Sep. 13, 1983
4402001 Semiconductor element capable of withstanding high voltage Aug. 30, 1983
4292642 Semiconductor device Sep. 29, 1981
4066483 Gate-controlled bidirectional switching device Jan. 3, 1978
4062032 Gate turn off semiconductor rectifiers Dec. 6, 1977











 
 
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