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Class Information
Number: 257/168
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With means to increase breakdown voltage
Description: Subject matter wherein the regenerative active junction type switching device includes means to increase the reverse voltage which the device can sustain without breaking down.

Sub-classes under this class:

Class Number Class Name Patents
257/169 High resistivity base layer 33
257/170 Surface feature (e.g., guard ring, groove, mesa, etc.) 214

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8692318 Trench MOS structure and method for making the same Apr. 8, 2014
8642987 Semiconductor device and manufacturing method thereof Feb. 4, 2014
8592860 Apparatus and method for protection of electronic circuits operating under high stress conditions Nov. 26, 2013
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8569740 High efficiency thermoelectric materials and devices Oct. 29, 2013
8552530 Vertical transient voltage suppressors Oct. 8, 2013
8531011 Protective structure having a semiconductor substrate Sep. 10, 2013
8450772 Phase change RAM device and method for manufacturing the same May. 28, 2013
8274114 Semiconductor device having a modified shallow trench isolation (STI) region and a modified well region Sep. 25, 2012
8232593 Power semiconductor device Jul. 31, 2012
8093676 Semiconductor component including an edge termination having a trench and method for producing Jan. 10, 2012
8076749 Semiconductor device Dec. 13, 2011
8004008 Semiconductor device Aug. 23, 2011
7902570 Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor Mar. 8, 2011
7897998 III-nitride power semiconductor device Mar. 1, 2011
7888232 Method for producing a protective structure Feb. 15, 2011
7863645 High breakdown voltage double-gate semiconductor device Jan. 4, 2011
7812402 Semiconductor device Oct. 12, 2010
7786506 Semiconductor devices with a field shaping region Aug. 31, 2010
7755102 High breakdown voltage diode and method of forming same Jul. 13, 2010
7652307 Semiconductor device with two overlapping diffusion layers held at floating voltage for improving withstand voltage Jan. 26, 2010
7626193 Apparatus comprising a single photon photodetector having reduced afterpulsing and method therefor Dec. 1, 2009
7619262 Method and device for electrostatic discharge protection Nov. 17, 2009
7601990 Method and apparatus for electrostatic discharge protection having a stable breakdown voltage and low snapback voltage Oct. 13, 2009
7602025 High voltage semiconductor device and method of manufacture thereof Oct. 13, 2009
7423299 Semiconductor devices with a field shaping region Sep. 9, 2008
7417282 Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode Aug. 26, 2008
7326965 Surface-emitting type device and its manufacturing method Feb. 5, 2008
7301179 Semiconductor device having a high breakdown voltage transistor formed thereon Nov. 27, 2007
7230304 Electric contacts and method of manufacturing thereof, and vacuum interrupter and vacuum circuit breaker using thereof Jun. 12, 2007
7192868 Method of obtaining release-standing micro structures and devices by selective etch removal of protective and sacrificial layer using the same Mar. 20, 2007
7161192 Silicon controlled rectifier Jan. 9, 2007
7135718 Diode device and transistor device Nov. 14, 2006
6967356 Vertical component with high-voltage strength Nov. 22, 2005
6960792 Bi-directional silicon controlled rectifier structure with high holding voltage for latchup prevention Nov. 1, 2005
6956248 Semiconductor device for low voltage protection with low capacitance Oct. 18, 2005
6946717 High voltage semiconductor device Sep. 20, 2005
6943382 Pressed-contact type semiconductor device Sep. 13, 2005
6921945 Semiconductor device with structure for improving breakdown voltage Jul. 26, 2005
6917077 Protection diode for improved ruggedness of a radio frequency power transistor and self-defining method to manufacture such protection diode Jul. 12, 2005
6822294 High holding voltage LVTSCR Nov. 23, 2004
6809383 Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure Oct. 26, 2004
6759691 ESD protection circuit having a high triggering threshold Jul. 6, 2004
6710418 Schottky rectifier with insulation-filled trenches and method of forming the same Mar. 23, 2004
6696707 High voltage integrated switching devices on a bonded and trenched silicon substrate Feb. 24, 2004
6683334 Compound semiconductor protection device for low voltage and high speed data lines Jan. 27, 2004
6583487 Power component bearing interconnections Jun. 24, 2003
6583453 Semiconductor device having a voltage-regulator device Jun. 24, 2003
6531717 Very low voltage actuated thyristor with centrally-located offset buried region Mar. 11, 2003
6476429 Semiconductor device with breakdown voltage improved by hetero region Nov. 5, 2002

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