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Class Information
Number: 257/166
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Emitter region feature > Multi-emitter region (e.g., emitter geometry or emitter ballast resistor) > Radially symmetric regions
Description: Subject matter wherein the plural emitters are located in regions of the device which are symmetrical extending radially in a horizontal direction from a predetermined emitter location.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7420228 |
Bipolar transistor comprising carbon-doped semiconductor |
Sep. 2, 2008 |
| 6963088 |
Semiconductor component |
Nov. 8, 2005 |
| 6603154 |
Semiconductor package and method of manufacturing semiconductor package |
Aug. 5, 2003 |
| 6495865 |
Microcathode with integrated extractor |
Dec. 17, 2002 |
| 6169292 |
Thin film type monolithic semiconductor device |
Jan. 2, 2001 |
| 6066864 |
Thyristor with integrated dU/dt protection |
May. 23, 2000 |
| 6033924 |
Method for fabricating a field emission device |
Mar. 7, 2000 |
| 5818074 |
Smooth switching thyristor |
Oct. 6, 1998 |
| 5736755 |
Vertical PNP power device with different ballastic resistant vertical PNP transistors |
Apr. 7, 1998 |
| 5654562 |
Latch resistant insulated gate semiconductor device |
Aug. 5, 1997 |
| 5637886 |
Thyristor with improved dv/dt resistance |
Jun. 10, 1997 |
| 5554863 |
Gate turn-off thyristor |
Sep. 10, 1996 |
| 5455434 |
Thyristor with breakdown region |
Oct. 3, 1995 |
| 4974047 |
Light triggered thyristor |
Nov. 27, 1990 |
| 4792839 |
Semiconductor power circuit breaker structure obviating secondary breakdown |
Dec. 20, 1988 |
| 4786959 |
Gate turn-off thyristor |
Nov. 22, 1988 |
| 4760438 |
Thyristor emitter short configuration |
Jul. 26, 1988 |
| 4758871 |
Thyristor with multiple groups of insulated control electrodes |
Jul. 19, 1988 |
| 4757025 |
Method of making gate turn off switch with anode short and buried base |
Jul. 12, 1988 |
| 4742382 |
Semiconductor component |
May. 3, 1988 |
| 4717947 |
Semiconductor device turned on and off by light |
Jan. 5, 1988 |
| 4713679 |
Reverse blocking type semiconductor device |
Dec. 15, 1987 |
| 4710792 |
Gate turn-off thyristor |
Dec. 1, 1987 |
| 4641162 |
Current limited insulated gate device |
Feb. 3, 1987 |
| 4639762 |
MOSFET with reduced bipolar effects |
Jan. 27, 1987 |
| 4626888 |
Gate turn-off thyristor |
Dec. 2, 1986 |
| 4595939 |
Radiation-controllable thyristor with multiple, non-concentric amplified stages |
Jun. 17, 1986 |
| 4542398 |
Semiconductor devices of multi-emitter type |
Sep. 17, 1985 |
| 4529999 |
Gate controlled switch |
Jul. 16, 1985 |
| 4500903 |
Semiconductor GTO switching device with radially elongated cathode emitter regions of increasing length |
Feb. 19, 1985 |
| 4491742 |
Semiconductor switch device |
Jan. 1, 1985 |
| 4486768 |
Amplified gate turn-off thyristor |
Dec. 4, 1984 |
| 4443810 |
Gate turn-off amplified thyristor with non-shorted auxiliary anode |
Apr. 17, 1984 |
| 4298882 |
Multilayer semiconductor element |
Nov. 3, 1981 |
| 4291325 |
Dual gate controlled thyristor with highly doped cathode base grid covered with high resistivity base layer |
Sep. 22, 1981 |
| 4238761 |
Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode |
Dec. 9, 1980 |
| 4223332 |
Thyristor having an anode transverse field emitter |
Sep. 16, 1980 |
| 4177478 |
Amplifying gate thyristor with gate turn-off (G.T.O.) |
Dec. 4, 1979 |
| 4092703 |
Gate controlled semiconductor device |
May. 30, 1978 |
| 4053922 |
Light triggered thyristor having controlled turn on delay |
Oct. 11, 1977 |
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