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Class Information
Number: 257/166
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Emitter region feature > Multi-emitter region (e.g., emitter geometry or emitter ballast resistor) > Radially symmetric regions
Description: Subject matter wherein the plural emitters are located in regions of the device which are symmetrical extending radially in a horizontal direction from a predetermined emitter location.










Patents under this class:

Patent Number Title Of Patent Date Issued
8410520 Rugged registered jack connection Apr. 2, 2013
8084786 Silicided base structure for high frequency transistors Dec. 27, 2011
7420228 Bipolar transistor comprising carbon-doped semiconductor Sep. 2, 2008
6963088 Semiconductor component Nov. 8, 2005
6603154 Semiconductor package and method of manufacturing semiconductor package Aug. 5, 2003
6495865 Microcathode with integrated extractor Dec. 17, 2002
6169292 Thin film type monolithic semiconductor device Jan. 2, 2001
6066864 Thyristor with integrated dU/dt protection May. 23, 2000
6033924 Method for fabricating a field emission device Mar. 7, 2000
5818074 Smooth switching thyristor Oct. 6, 1998
5736755 Vertical PNP power device with different ballastic resistant vertical PNP transistors Apr. 7, 1998
5654562 Latch resistant insulated gate semiconductor device Aug. 5, 1997
5637886 Thyristor with improved dv/dt resistance Jun. 10, 1997
5554863 Gate turn-off thyristor Sep. 10, 1996
5455434 Thyristor with breakdown region Oct. 3, 1995
4974047 Light triggered thyristor Nov. 27, 1990
4792839 Semiconductor power circuit breaker structure obviating secondary breakdown Dec. 20, 1988
4786959 Gate turn-off thyristor Nov. 22, 1988
4760438 Thyristor emitter short configuration Jul. 26, 1988
4758871 Thyristor with multiple groups of insulated control electrodes Jul. 19, 1988
4757025 Method of making gate turn off switch with anode short and buried base Jul. 12, 1988
4742382 Semiconductor component May. 3, 1988
4717947 Semiconductor device turned on and off by light Jan. 5, 1988
4713679 Reverse blocking type semiconductor device Dec. 15, 1987
4710792 Gate turn-off thyristor Dec. 1, 1987
4641162 Current limited insulated gate device Feb. 3, 1987
4639762 MOSFET with reduced bipolar effects Jan. 27, 1987
4626888 Gate turn-off thyristor Dec. 2, 1986
4595939 Radiation-controllable thyristor with multiple, non-concentric amplified stages Jun. 17, 1986
4542398 Semiconductor devices of multi-emitter type Sep. 17, 1985
4529999 Gate controlled switch Jul. 16, 1985
4500903 Semiconductor GTO switching device with radially elongated cathode emitter regions of increasing length Feb. 19, 1985
4491742 Semiconductor switch device Jan. 1, 1985
4486768 Amplified gate turn-off thyristor Dec. 4, 1984
4443810 Gate turn-off amplified thyristor with non-shorted auxiliary anode Apr. 17, 1984
4298882 Multilayer semiconductor element Nov. 3, 1981
4291325 Dual gate controlled thyristor with highly doped cathode base grid covered with high resistivity base layer Sep. 22, 1981
4238761 Integrated gate assisted turn-off, amplifying gate thyristor with narrow lipped turn-off diode Dec. 9, 1980
4223332 Thyristor having an anode transverse field emitter Sep. 16, 1980
4177478 Amplifying gate thyristor with gate turn-off (G.T.O.) Dec. 4, 1979
4092703 Gate controlled semiconductor device May. 30, 1978
4053922 Light triggered thyristor having controlled turn on delay Oct. 11, 1977











 
 
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