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Class Information
Number: 257/165
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Emitter region feature > Multi-emitter region (e.g., emitter geometry or emitter ballast resistor) > Laterally symmetric regions
Description: Subject matter wherein the plural emitters are located in regions of the device which are symmetrical in a horizontal direction.

Patents under this class:

Patent Number Title Of Patent Date Issued
8421124 High-beta bipolar junction transistor and method of manufacture Apr. 16, 2013
7943501 Systems and methods of forming tantalum silicide layers May. 17, 2011
7807498 Substrate, substrate fabrication, semiconductor device, and semiconductor device fabrication Oct. 5, 2010
7488993 Semiconductor device and method of manufacturing the same Feb. 10, 2009
7420228 Bipolar transistor comprising carbon-doped semiconductor Sep. 2, 2008
7414273 Two-dimensional silicon controlled rectifier Aug. 19, 2008
7378328 Method of fabricating memory device utilizing carbon nanotubes May. 27, 2008
7196351 Forming phase change memories Mar. 27, 2007
7170106 Power semiconductor device Jan. 30, 2007
7078740 Power semiconductor device Jul. 18, 2006
6809349 Power semiconductor device Oct. 26, 2004
6483188 Rf integrated circuit layout Nov. 19, 2002
RE36818 Insulated gate semiconductor device with stripe widths Aug. 15, 2000
6033924 Method for fabricating a field emission device Mar. 7, 2000
5793066 Base resistance controlled thyristor structure with high-density layout for increased current capacity Aug. 11, 1998
5731605 Turn-off power semiconductor component with a particular ballast resistor structure Mar. 24, 1998
5710442 Semiconductor device and method of manufacturing same Jan. 20, 1998
5654562 Latch resistant insulated gate semiconductor device Aug. 5, 1997
5525816 Insulated gate semiconductor device with stripe widths Jun. 11, 1996
5485024 Electrostatic discharge circuit Jan. 16, 1996
5323044 Bi-directional MOSFET switch Jun. 21, 1994
5306952 Multilayer aluminum-containing interconnection structure of semiconductor device Apr. 26, 1994
4931848 Thyristor having increased dI/dt stability Jun. 5, 1990
4779126 Optically triggered lateral thyristor with auxiliary region Oct. 18, 1988
4717940 MIS controlled gate turn-off thyristor Jan. 5, 1988
4713679 Reverse blocking type semiconductor device Dec. 15, 1987
4682195 Insulated gate device with configured emitter contact pad Jul. 21, 1987
4651189 Semiconductor device provided with electrically floating control electrode Mar. 17, 1987
4646122 Semiconductor device with floating remote gate turn-off means Feb. 24, 1987
4635087 Monolithic bipolar SCR memory cell Jan. 6, 1987
4618781 Gate turn-off thyristor construction Oct. 21, 1986
4491742 Semiconductor switch device Jan. 1, 1985
4486768 Amplified gate turn-off thyristor Dec. 4, 1984
4356503 Latching transistor Oct. 26, 1982
4258377 Lateral field controlled thyristor Mar. 24, 1981
4170020 Gate turn-off thyristor for reducing the on current thereof Oct. 2, 1979
4092703 Gate controlled semiconductor device May. 30, 1978
4035825 Thyristor with branched base Jul. 12, 1977

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