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Class Information
Number: 257/164
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Emitter region feature > Multi-emitter region (e.g., emitter geometry or emitter ballast resistor)
Description: Subject matter wherein the regenerative switching device has more than one emitter region.










Sub-classes under this class:

Class Number Class Name Patents
257/165 Laterally symmetric regions 38
257/166 Radially symmetric regions 42


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8344415 Semiconductor component Jan. 1, 2013
8193609 Heterojunction bipolar transistor device with electrostatic discharge ruggedness Jun. 5, 2012
8138521 Thyristor semiconductor device and switching method thereof Mar. 20, 2012
8097889 Light emitting device having light emitting elements with a shared electrode Jan. 17, 2012
8084774 Light emitting device having light emitting elements Dec. 27, 2011
8044388 Method of forming a carbon nanotube-based contact to semiconductor Oct. 25, 2011
8004008 Semiconductor device Aug. 23, 2011
7923751 Bipolar transistor with a low saturation voltage Apr. 12, 2011
7906796 Bipolar device and fabrication method thereof Mar. 15, 2011
7897982 Light emitting device having common N-electrode Mar. 1, 2011
7795047 Current balancing in NPN BJT and BSCR snapback devices Sep. 14, 2010
7755102 High breakdown voltage diode and method of forming same Jul. 13, 2010
7667237 Light emitting device having light emitting elements Feb. 23, 2010
7646031 Light emitting device having light emitting elements Jan. 12, 2010
7615793 AC driven light--emitting device Nov. 10, 2009
7488993 Semiconductor device and method of manufacturing the same Feb. 10, 2009
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7420228 Bipolar transistor comprising carbon-doped semiconductor Sep. 2, 2008
7417259 Light-emitting device having light-emitting elements Aug. 26, 2008
7332749 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor Feb. 19, 2008
7312483 Thin film transistor device and method of manufacturing the same Dec. 25, 2007
7282743 Light-emitting device having light-emitting elements Oct. 16, 2007
7256434 Heterojunction bipolar transistor and method for manufacturing the same, and power amplifier using the same Aug. 14, 2007
7192785 Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and methods of use Mar. 20, 2007
6956248 Semiconductor device for low voltage protection with low capacitance Oct. 18, 2005
6855970 High-breakdown-voltage semiconductor device Feb. 15, 2005
6703647 Triple base bipolar phototransistor Mar. 9, 2004
6570186 Light emitting device using group III nitride compound semiconductor May. 27, 2003
6531717 Very low voltage actuated thyristor with centrally-located offset buried region Mar. 11, 2003
6503782 Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors Jan. 7, 2003
6495865 Microcathode with integrated extractor Dec. 17, 2002
6492663 Universal source geometry for MOS-gated power devices Dec. 10, 2002
6468808 Water-soluble luminescent quantum dots and biomolecular conjugates thereof and related compositions and method of use Oct. 22, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6329675 Self-aligned bipolar junction silicon carbide transistors Dec. 11, 2001
6303973 Power transistor having large electric current capacity and semiconductor integrated circuit device using the same Oct. 16, 2001
6111278 Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up Aug. 29, 2000
RE36818 Insulated gate semiconductor device with stripe widths Aug. 15, 2000
6084253 Low voltage four-layer device with offset buried region Jul. 4, 2000
6033924 Method for fabricating a field emission device Mar. 7, 2000
5998812 Amplifying-gate thyristor with an increased hold current Dec. 7, 1999
5962878 Surge protection device and method of fabricating the same Oct. 5, 1999
5907180 Ballast monitoring for radio frequency power transistors May. 25, 1999
5818074 Smooth switching thyristor Oct. 6, 1998
5739555 Amplifying-gate thyristor with an increased hold current Apr. 14, 1998
5736755 Vertical PNP power device with different ballastic resistant vertical PNP transistors Apr. 7, 1998
5731605 Turn-off power semiconductor component with a particular ballast resistor structure Mar. 24, 1998
5654562 Latch resistant insulated gate semiconductor device Aug. 5, 1997
5581096 Integrated semiconductor device having a thyristor Dec. 3, 1996
5525816 Insulated gate semiconductor device with stripe widths Jun. 11, 1996

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