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Class Information
Number: 257/163
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Emitter region feature
Description: Subject matter wherein the active emitter junction region of the regenerative device has a particular characteristic.

Sub-classes under this class:

Class Number Class Name Patents
257/164 Multi-emitter region (e.g., emitter geometry or emitter ballast resistor) 89

Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
5543639 MOS gate controlled thyristor Aug. 6, 1996
5498884 MOS-controlled thyristor with current saturation characteristics Mar. 12, 1996
5491351 Gate turn-off thyristor Feb. 13, 1996
5444272 Three-terminal thyristor with single MOS-gate controlled characteristics Aug. 22, 1995
5378903 Semiconductor device with low on-voltage and large controllable turn-off current Jan. 3, 1995
5349239 Vertical type construction transistor Sep. 20, 1994
5336907 MOS gate controlled thyristor having improved turn on/turn off characteristics Aug. 9, 1994
5306930 Emitter switched thyristor with buried dielectric layer Apr. 26, 1994
5298769 GTO thyristor capable of preventing parasitic thyristors from being generated Mar. 29, 1994
5294816 Unit cell arrangement for emitter switched thyristor with base resistance control Mar. 15, 1994
5281832 Bidirectional two-terminal thyristor Jan. 25, 1994
5274253 Semiconductor protection device against abnormal voltage Dec. 28, 1993
5245202 Conductivity modulation type MISFET and a control circuit thereof Sep. 14, 1993
5241194 Base resistance controlled thyristor with integrated single-polarity gate control Aug. 31, 1993
5155568 High-voltage semiconductor device Oct. 13, 1992
5068704 Method of manufacturing semiconductor device Nov. 26, 1991
5063428 Semiconductor element having a p-zone on the anode side and an adjacent, weakly doped n-base zone Nov. 5, 1991
5049965 Thyristor having adjustable breakover voltage and method of manufacture Sep. 17, 1991
5017992 High blocking-capacity semiconductor component May. 21, 1991
5005065 High current gate turn-off thyristor Apr. 2, 1991
4994885 Bidirectional triode thyristor Feb. 19, 1991
4958211 MCT providing turn-off control of arbitrarily large currents Sep. 18, 1990
4954869 MOS-controlled thyristor (MCT) Sep. 4, 1990
4947226 Bilateral switching device Aug. 7, 1990
4910573 Gate turn-off thyristor and method of producing same Mar. 20, 1990
4868625 Gate turn-off thyristor of multi-emitter type Sep. 19, 1989
4812893 Triac desensitized with respect to re-striking risks on switching across a reactive load Mar. 14, 1989
4755861 Light-firable thyristor Jul. 5, 1988
4691220 Radial high voltage bidirectional switch structure with concavo-concave shaped semiconductor regions Sep. 1, 1987
4641175 Bidirectional power switch with optimized emitter spacing near control electrode Feb. 3, 1987
4617583 Gate turn-off thyristor Oct. 14, 1986
4614962 Controlled electronic switching device for the suppression of transients Sep. 30, 1986
4612449 Thyristor having a secondary emitter electrode and a method for operating the same Sep. 16, 1986
4599633 Integrated self-firing amplified thyristor structure for on/off switching of high currents and control circuit thereof Jul. 8, 1986
4561008 Ballasted, gate controlled semiconductor device Dec. 24, 1985
4500901 Thyristor having n.sup.+ - main and auxiliary emitters and a p.sup.+ ring forming a p.sup.+ n.sup.+ junction with the main emitter Feb. 19, 1985
4414559 Semiconductor thyristor device with laterally displaced auxiliary and main cathode regions Nov. 8, 1983
4338617 Four terminal GTO thyristor with transistor controlled turn-off Jul. 6, 1982
4223331 Thyristor with two control terminals and control device Sep. 16, 1980
4219832 Thyristor having low on-state voltage with low areal doping emitter region Aug. 26, 1980
4210924 Semiconductor controlled rectifier with configured cathode to eliminate hot-spots Jul. 1, 1980
4195306 Gate turn-off thyristor Mar. 25, 1980
4164436 Process for preparation of semiconductor devices utilizing a two-step polycrystalline deposition technique to form a diffusion source Aug. 14, 1979
4162413 Semiconductor switch Jul. 24, 1979
4150390 Thyristor with gate and emitter shunts distributed over the cathode surface Apr. 17, 1979
4130828 Triac structure having improved triggering sensitivity with single groove extending from gate region Dec. 19, 1978
4121239 Controllable semiconductor component for two current directions Oct. 17, 1978
4089024 Semiconductor switching device May. 9, 1978
4086612 Thyristor Apr. 25, 1978
4083063 Gate turnoff thyristor with a pilot SCR Apr. 4, 1978

1 2 3

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