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Class Information
Number: 257/163
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Emitter region feature
Description: Subject matter wherein the active emitter junction region of the regenerative device has a particular characteristic.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7439563 |
High-breakdown-voltage semiconductor device |
Oct. 21, 2008 |
| 7420228 |
Bipolar transistor comprising carbon-doped semiconductor |
Sep. 2, 2008 |
| 7326965 |
Surface-emitting type device and its manufacturing method |
Feb. 5, 2008 |
| 7276778 |
Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent |
Oct. 2, 2007 |
| 7256430 |
Thyristor semiconductor memory device and method of manufacture |
Aug. 14, 2007 |
| 7233031 |
Vertical power semiconductor component |
Jun. 19, 2007 |
| 7075122 |
Thyristor device with carbon lifetime adjustment implant and its method of fabrication |
Jul. 11, 2006 |
| 7049158 |
Method of manufacturing an emitter |
May. 23, 2006 |
| 6933517 |
Tunneling emitters |
Aug. 23, 2005 |
| 6835997 |
Thyristor-based device with trench dielectric material |
Dec. 28, 2004 |
| 6806488 |
Tunneling emitters and method of making |
Oct. 19, 2004 |
| 6781146 |
Annealed tunneling emitter |
Aug. 24, 2004 |
| 6756612 |
Carrier coupler for thyristor-based semiconductor device |
Jun. 29, 2004 |
| 6753544 |
Silicon-based dielectric tunneling emitter |
Jun. 22, 2004 |
| 6727518 |
Light emitting device using group III nitride compound semiconductor |
Apr. 27, 2004 |
| 6696709 |
Low voltage protection module |
Feb. 24, 2004 |
| 6683330 |
Recessed thyristor control port |
Jan. 27, 2004 |
| 6683331 |
Trench IGBT |
Jan. 27, 2004 |
| 6666481 |
Shunt connection to emitter |
Dec. 23, 2003 |
| 6657240 |
Gate-controlled, negative resistance diode device using band-to-band tunneling |
Dec. 2, 2003 |
| 6570186 |
Light emitting device using group III nitride compound semiconductor |
May. 27, 2003 |
| 6509578 |
Method and structure for limiting emission current in field emission devices |
Jan. 21, 2003 |
| 6503782 |
Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors |
Jan. 7, 2003 |
| 6329675 |
Self-aligned bipolar junction silicon carbide transistors |
Dec. 11, 2001 |
| 6303973 |
Power transistor having large electric current capacity and semiconductor integrated circuit device using the same |
Oct. 16, 2001 |
| 6033924 |
Method for fabricating a field emission device |
Mar. 7, 2000 |
| 6020623 |
Integrated structure with device having a preset reverse conduction threshold |
Feb. 1, 2000 |
| 5959344 |
High forward current gain bipolar transistor |
Sep. 28, 1999 |
| 5939736 |
Insulated gate thyristor |
Aug. 17, 1999 |
| 5925900 |
Emitter-switched thyristor having a floating ohmic contact |
Jul. 20, 1999 |
| 5907180 |
Ballast monitoring for radio frequency power transistors |
May. 25, 1999 |
| 5894141 |
Bipolar semiconductor power controlling devices with heterojunction |
Apr. 13, 1999 |
| 5796124 |
MOS gate controlled thyristor |
Aug. 18, 1998 |
| 5719411 |
Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics |
Feb. 17, 1998 |
| 5710445 |
Gate turn-off thyristor for high blocking voltage and small component thickness |
Jan. 20, 1998 |
| 5619047 |
Semiconductor diode in which electrons are injected into a reverse current |
Apr. 8, 1997 |
| 5581096 |
Integrated semiconductor device having a thyristor |
Dec. 3, 1996 |
| 5581095 |
Bidirectional shockley diode having overlapping emitter regions |
Dec. 3, 1996 |
| 5569941 |
Insulated gate semiconductor device with a buried gapped semiconductor region |
Oct. 29, 1996 |
| 5554862 |
Power semiconductor device |
Sep. 10, 1996 |
| 5543639 |
MOS gate controlled thyristor |
Aug. 6, 1996 |
| 5498884 |
MOS-controlled thyristor with current saturation characteristics |
Mar. 12, 1996 |
| 5491351 |
Gate turn-off thyristor |
Feb. 13, 1996 |
| 5444272 |
Three-terminal thyristor with single MOS-gate controlled characteristics |
Aug. 22, 1995 |
| 5378903 |
Semiconductor device with low on-voltage and large controllable turn-off current |
Jan. 3, 1995 |
| 5349239 |
Vertical type construction transistor |
Sep. 20, 1994 |
| 5336907 |
MOS gate controlled thyristor having improved turn on/turn off characteristics |
Aug. 9, 1994 |
| 5306930 |
Emitter switched thyristor with buried dielectric layer |
Apr. 26, 1994 |
| 5298769 |
GTO thyristor capable of preventing parasitic thyristors from being generated |
Mar. 29, 1994 |
| 5294816 |
Unit cell arrangement for emitter switched thyristor with base resistance control |
Mar. 15, 1994 |
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