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Class Information
Number: 257/163
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Emitter region feature
Description: Subject matter wherein the active emitter junction region of the regenerative device has a particular characteristic.










Sub-classes under this class:

Class Number Class Name Patents
257/164 Multi-emitter region (e.g., emitter geometry or emitter ballast resistor) 89


Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8461621 Method and apparatus of forming bipolar transistor device Jun. 11, 2013
8344415 Semiconductor component Jan. 1, 2013
8212292 High gain tunable bipolar transistor Jul. 3, 2012
8138521 Thyristor semiconductor device and switching method thereof Mar. 20, 2012
7989339 Vapor deposition processes for tantalum carbide nitride materials Aug. 2, 2011
7915603 Modifiable gate stack memory element Mar. 29, 2011
7894255 Thyristor based memory cell Feb. 22, 2011
7883941 Methods for fabricating memory cells and memory devices incorporating the same Feb. 8, 2011
7795047 Current balancing in NPN BJT and BSCR snapback devices Sep. 14, 2010
7491586 Semiconductor device with leakage implant and method of fabrication Feb. 17, 2009
7439563 High-breakdown-voltage semiconductor device Oct. 21, 2008
7420228 Bipolar transistor comprising carbon-doped semiconductor Sep. 2, 2008
7326965 Surface-emitting type device and its manufacturing method Feb. 5, 2008
7276778 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent Oct. 2, 2007
7256430 Thyristor semiconductor memory device and method of manufacture Aug. 14, 2007
7233031 Vertical power semiconductor component Jun. 19, 2007
7075122 Thyristor device with carbon lifetime adjustment implant and its method of fabrication Jul. 11, 2006
7049158 Method of manufacturing an emitter May. 23, 2006
6933517 Tunneling emitters Aug. 23, 2005
6835997 Thyristor-based device with trench dielectric material Dec. 28, 2004
6806488 Tunneling emitters and method of making Oct. 19, 2004
6781146 Annealed tunneling emitter Aug. 24, 2004
6756612 Carrier coupler for thyristor-based semiconductor device Jun. 29, 2004
6753544 Silicon-based dielectric tunneling emitter Jun. 22, 2004
6727518 Light emitting device using group III nitride compound semiconductor Apr. 27, 2004
6696709 Low voltage protection module Feb. 24, 2004
6683330 Recessed thyristor control port Jan. 27, 2004
6683331 Trench IGBT Jan. 27, 2004
6666481 Shunt connection to emitter Dec. 23, 2003
6657240 Gate-controlled, negative resistance diode device using band-to-band tunneling Dec. 2, 2003
6570186 Light emitting device using group III nitride compound semiconductor May. 27, 2003
6509578 Method and structure for limiting emission current in field emission devices Jan. 21, 2003
6503782 Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors Jan. 7, 2003
6329675 Self-aligned bipolar junction silicon carbide transistors Dec. 11, 2001
6303973 Power transistor having large electric current capacity and semiconductor integrated circuit device using the same Oct. 16, 2001
6033924 Method for fabricating a field emission device Mar. 7, 2000
6020623 Integrated structure with device having a preset reverse conduction threshold Feb. 1, 2000
5959344 High forward current gain bipolar transistor Sep. 28, 1999
5939736 Insulated gate thyristor Aug. 17, 1999
5925900 Emitter-switched thyristor having a floating ohmic contact Jul. 20, 1999
5907180 Ballast monitoring for radio frequency power transistors May. 25, 1999
5894141 Bipolar semiconductor power controlling devices with heterojunction Apr. 13, 1999
5796124 MOS gate controlled thyristor Aug. 18, 1998
5719411 Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics Feb. 17, 1998
5710445 Gate turn-off thyristor for high blocking voltage and small component thickness Jan. 20, 1998
5619047 Semiconductor diode in which electrons are injected into a reverse current Apr. 8, 1997
5581095 Bidirectional shockley diode having overlapping emitter regions Dec. 3, 1996
5581096 Integrated semiconductor device having a thyristor Dec. 3, 1996
5569941 Insulated gate semiconductor device with a buried gapped semiconductor region Oct. 29, 1996
5554862 Power semiconductor device Sep. 10, 1996

1 2 3










 
 
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