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Class Information
Number: 257/160
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) > With distributed amplified current
Description: Subject matter wherein the regenerative device with amplification means produces amplified current which is distributed by electrodes to other portions of the device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7453104 |
Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit |
Nov. 18, 2008 |
| 7312482 |
Semiconductor device, power amplifier device and PC card |
Dec. 25, 2007 |
| 7064359 |
Switching semiconductor device and switching circuit |
Jun. 20, 2006 |
| 6914280 |
Switching circuit device |
Jul. 5, 2005 |
| 6423987 |
Self-protect thyristor |
Jul. 23, 2002 |
| 5998812 |
Amplifying-gate thyristor with an increased hold current |
Dec. 7, 1999 |
| 5097160 |
Method of transmitting pulse signal and apparatus therefor |
Mar. 17, 1992 |
| 4739387 |
Amplifying gate thyristor having high gate sensitivity and high dv/dt rating |
Apr. 19, 1988 |
| 4682199 |
High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer |
Jul. 21, 1987 |
| 4646121 |
Thyristor with a self-protection function for breakover turn-on failure |
Feb. 24, 1987 |
| 4622572 |
High voltage semiconductor device having an improved DV/DT capability and plasma spreading |
Nov. 11, 1986 |
| 4604638 |
Five layer semiconductor device with separate insulated turn-on and turn-off gates |
Aug. 5, 1986 |
| 4599633 |
Integrated self-firing amplified thyristor structure for on/off switching of high currents and control circuit thereof |
Jul. 8, 1986 |
| 4595939 |
Radiation-controllable thyristor with multiple, non-concentric amplified stages |
Jun. 17, 1986 |
| 4577210 |
Controlled rectifier having ring gate with internal protrusion for dV/dt control |
Mar. 18, 1986 |
| 4563698 |
SCR Having multiple gates and phosphorus gettering exteriorly of a ring gate |
Jan. 7, 1986 |
| 4536783 |
High di/dt, light-triggered thyristor with etched moat current limiting resistors |
Aug. 20, 1985 |
| 4509068 |
Thyristor with controllable emitter short circuits and trigger amplification |
Apr. 2, 1985 |
| 4509069 |
Light triggerable thyristor with controllable emitter-short circuit and trigger amplification |
Apr. 2, 1985 |
| 4486768 |
Amplified gate turn-off thyristor |
Dec. 4, 1984 |
| 4445133 |
Semiconductor device |
Apr. 24, 1984 |
| 4443810 |
Gate turn-off amplified thyristor with non-shorted auxiliary anode |
Apr. 17, 1984 |
| 4414559 |
Semiconductor thyristor device with laterally displaced auxiliary and main cathode regions |
Nov. 8, 1983 |
| 4352118 |
Thyristor with segmented turn-on line for directing turn-on current |
Sep. 28, 1982 |
| 4338617 |
Four terminal GTO thyristor with transistor controlled turn-off |
Jul. 6, 1982 |
| 4315274 |
Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions |
Feb. 9, 1982 |
| 4314266 |
Thyristor with voltage breakover current control separated from main emitter by current limit region |
Feb. 2, 1982 |
| 4298880 |
Power thyristor and method of fabrication therefore utilizing control, generating, and firing gates |
Nov. 3, 1981 |
| 4298882 |
Multilayer semiconductor element |
Nov. 3, 1981 |
| 4296427 |
Reverse conducting amplified gate thyristor with plate-like separator section |
Oct. 20, 1981 |
| 4282542 |
Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity |
Aug. 4, 1981 |
| 4261001 |
Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity |
Apr. 7, 1981 |
| 4261000 |
High voltage semiconductor device having an improved dv/dt capability |
Apr. 7, 1981 |
| 4240091 |
Semiconductor controlled rectifier device with small area dV/dt self-protecting means |
Dec. 16, 1980 |
| 4231054 |
Thyristor with starting and generating cathode base contacts for use in rectifier circuits |
Oct. 28, 1980 |
| 4223331 |
Thyristor with two control terminals and control device |
Sep. 16, 1980 |
| 4214254 |
Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion |
Jul. 22, 1980 |
| 4195306 |
Gate turn-off thyristor |
Mar. 25, 1980 |
| 4114178 |
Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate |
Sep. 12, 1978 |
| 4086612 |
Thyristor |
Apr. 25, 1978 |
| 4063270 |
Semiconductor controlled rectifier device having amplifying gate structure |
Dec. 13, 1977 |
| 4047219 |
Radiation sensitive thyristor structure with isolated detector |
Sep. 6, 1977 |
| 4028721 |
Semiconductor controlled rectifier device |
Jun. 7, 1977 |
| 4016591 |
Semiconductor controlled rectifier |
Apr. 5, 1977 |
| 4012761 |
Self-protected semiconductor device |
Mar. 15, 1977 |
| 4001865 |
Light controllable thyristor |
Jan. 4, 1977 |
| 3999211 |
Thyristor |
Dec. 21, 1976 |
| 3995305 |
Thyristor |
Nov. 30, 1976 |
| 3990090 |
Semiconductor controlled rectifier |
Nov. 2, 1976 |
| 3978513 |
Semiconductor controlled rectifying device |
Aug. 31, 1976 |
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