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Class Information
Number: 257/160
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) > With distributed amplified current
Description: Subject matter wherein the regenerative device with amplification means produces amplified current which is distributed by electrodes to other portions of the device.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
7956381 Multi-layered integrated circuit and apparatus with thermal management and method Jun. 7, 2011
7453104 Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit Nov. 18, 2008
7312482 Semiconductor device, power amplifier device and PC card Dec. 25, 2007
7064359 Switching semiconductor device and switching circuit Jun. 20, 2006
6914280 Switching circuit device Jul. 5, 2005
6423987 Self-protect thyristor Jul. 23, 2002
5998812 Amplifying-gate thyristor with an increased hold current Dec. 7, 1999
5097160 Method of transmitting pulse signal and apparatus therefor Mar. 17, 1992
4739387 Amplifying gate thyristor having high gate sensitivity and high dv/dt rating Apr. 19, 1988
4682199 High voltage thyristor with optimized doping, thickness, and sheet resistivity for cathode base layer Jul. 21, 1987
4646121 Thyristor with a self-protection function for breakover turn-on failure Feb. 24, 1987
4622572 High voltage semiconductor device having an improved DV/DT capability and plasma spreading Nov. 11, 1986
4604638 Five layer semiconductor device with separate insulated turn-on and turn-off gates Aug. 5, 1986
4599633 Integrated self-firing amplified thyristor structure for on/off switching of high currents and control circuit thereof Jul. 8, 1986
4595939 Radiation-controllable thyristor with multiple, non-concentric amplified stages Jun. 17, 1986
4577210 Controlled rectifier having ring gate with internal protrusion for dV/dt control Mar. 18, 1986
4563698 SCR Having multiple gates and phosphorus gettering exteriorly of a ring gate Jan. 7, 1986
4536783 High di/dt, light-triggered thyristor with etched moat current limiting resistors Aug. 20, 1985
4509069 Light triggerable thyristor with controllable emitter-short circuit and trigger amplification Apr. 2, 1985
4509068 Thyristor with controllable emitter short circuits and trigger amplification Apr. 2, 1985
4486768 Amplified gate turn-off thyristor Dec. 4, 1984
4445133 Semiconductor device Apr. 24, 1984
4443810 Gate turn-off amplified thyristor with non-shorted auxiliary anode Apr. 17, 1984
4414559 Semiconductor thyristor device with laterally displaced auxiliary and main cathode regions Nov. 8, 1983
4352118 Thyristor with segmented turn-on line for directing turn-on current Sep. 28, 1982
4338617 Four terminal GTO thyristor with transistor controlled turn-off Jul. 6, 1982
4315274 Thyristor with switchable capacitor between auxiliary thyristor cathode and main thyristor gate regions Feb. 9, 1982
4314266 Thyristor with voltage breakover current control separated from main emitter by current limit region Feb. 2, 1982
4298880 Power thyristor and method of fabrication therefore utilizing control, generating, and firing gates Nov. 3, 1981
4298882 Multilayer semiconductor element Nov. 3, 1981
4296427 Reverse conducting amplified gate thyristor with plate-like separator section Oct. 20, 1981
4282542 Interference-potential-compensated thyristor comprising at least four zones of different type of conductivity Aug. 4, 1981
4261000 High voltage semiconductor device having an improved dv/dt capability Apr. 7, 1981
4261001 Partially isolated amplifying gate thyristor with controllable dv/dt compensation, high di/dt capability, and high sensitivity Apr. 7, 1981
4240091 Semiconductor controlled rectifier device with small area dV/dt self-protecting means Dec. 16, 1980
4231054 Thyristor with starting and generating cathode base contacts for use in rectifier circuits Oct. 28, 1980
4223331 Thyristor with two control terminals and control device Sep. 16, 1980
4214254 Amplified gate semiconductor controlled rectifier with reduced lifetime in auxiliary thyristor portion Jul. 22, 1980
4195306 Gate turn-off thyristor Mar. 25, 1980
4114178 Semiconductor controlled rectifier having an auxiliary region with localized low resistance paths to the control gate Sep. 12, 1978
4086612 Thyristor Apr. 25, 1978
4063270 Semiconductor controlled rectifier device having amplifying gate structure Dec. 13, 1977
4047219 Radiation sensitive thyristor structure with isolated detector Sep. 6, 1977
4028721 Semiconductor controlled rectifier device Jun. 7, 1977
4016591 Semiconductor controlled rectifier Apr. 5, 1977
4012761 Self-protected semiconductor device Mar. 15, 1977
4001865 Light controllable thyristor Jan. 4, 1977
3999211 Thyristor Dec. 21, 1976
3995305 Thyristor Nov. 30, 1976

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