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Class Information
Number: 257/158
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) > Three or more amplification stages
Description: Subject matter wherein the amplification means has three or more stages of amplification.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8268649 |
Disk laser including an amplified spontaneous emission (ASE) suppression feature |
Sep. 18, 2012 |
| 7759194 |
Electrically programmable device with embedded EEPROM and method for making thereof |
Jul. 20, 2010 |
| 7586150 |
Semiconductor devices with local recess channel transistors and methods of manufacturing the same |
Sep. 8, 2009 |
| 7453104 |
Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit |
Nov. 18, 2008 |
| 7312482 |
Semiconductor device, power amplifier device and PC card |
Dec. 25, 2007 |
| 6963088 |
Semiconductor component |
Nov. 8, 2005 |
| 6649960 |
Synthetic free layer structure for MRAM devices |
Nov. 18, 2003 |
| 6630700 |
NMOS circuit in isolated wells that are connected by a bias stack having pluralirty of diode elements |
Oct. 7, 2003 |
| 6444505 |
Thin film transistor (TFT) structure with planarized gate electrode |
Sep. 3, 2002 |
| 6271540 |
Thin film transistor with silicon oxynitride film and silicon nitride channel passivation film for preventing a back channel effect and a method for fabricating the same |
Aug. 7, 2001 |
| 6066864 |
Thyristor with integrated dU/dt protection |
May. 23, 2000 |
| 5998812 |
Amplifying-gate thyristor with an increased hold current |
Dec. 7, 1999 |
| 5475242 |
Notched insulation gate static induction transistor integrated circuit |
Dec. 12, 1995 |
| 4529998 |
Amplified gate thyristor with non-latching amplified control transistors across base layers |
Jul. 16, 1985 |
| 4327367 |
Thyristor with even turn-on line potential and method with 1-micron to 5-mil wide alignment region band |
Apr. 27, 1982 |
| 4314266 |
Thyristor with voltage breakover current control separated from main emitter by current limit region |
Feb. 2, 1982 |
| 4286279 |
Multilayer semiconductor switching devices |
Aug. 25, 1981 |
| 4190853 |
Multilayer semiconductor switching devices |
Feb. 26, 1980 |
| 4086612 |
Thyristor |
Apr. 25, 1978 |
| 4079407 |
Single chip electronic switching circuit responsive to external stimuli |
Mar. 14, 1978 |
| 4060826 |
Light activated thyristor capable of activation by intensity radiation |
Nov. 29, 1977 |
| 4012761 |
Self-protected semiconductor device |
Mar. 15, 1977 |
| 3995305 |
Thyristor |
Nov. 30, 1976 |
| 3968512 |
Thyristor |
Jul. 6, 1976 |
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