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Class Information
Number: 257/157
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
Description: Subject matter wherein the regenerative switching device has means to amplify the control current of the device, which is physically integrated with the regenerative switching device.

Sub-classes under this class:

Class Number Class Name Patents
257/158 Three or more amplification stages 24
257/159 Transistor as amplifier 36
257/161 With a turn-off diode 31
257/160 With distributed amplified current 55

Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8569867 Semiconductor device Oct. 29, 2013
8513702 Use of a metal complex as a p-dopant for an organic semiconductive matrix material, organic semiconductor material and organic light-emitting diodes Aug. 20, 2013
8415710 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Apr. 9, 2013
8368123 Apparatus for sensing an event Feb. 5, 2013
8174031 Light-emitting element chip, exposure device and image forming apparatus May. 8, 2012
8174285 Component provided with an integrated circuit comprising a cryptorocessor and method of installation thereof May. 8, 2012
8145020 Semiconductor device Mar. 27, 2012
8134178 Light-emitting element Mar. 13, 2012
8124987 Light-emitting element chip, exposure device and image forming apparatus Feb. 28, 2012
8080830 Semiconductor device and method of driving the same Dec. 20, 2011
8080831 Semiconductor device and manufacturing the same Dec. 20, 2011
7968907 Low capacitance over-voltage protection thyristor device Jun. 28, 2011
7906812 Tunable voltage isolation ground to ground ESD clamp Mar. 15, 2011
7884389 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Feb. 8, 2011
7763940 Device having a low-voltage trigger element Jul. 27, 2010
7741656 Semiconductor device and manufacturing the same Jun. 22, 2010
7723748 Semiconductor device including electrostatic discharge protection circuit May. 25, 2010
7718473 HF control bidirectional switch May. 18, 2010
7719057 Multiple oxide thickness for a semiconductor device May. 18, 2010
7687826 Thyristor with recovery protection Mar. 30, 2010
7682879 Edge coating a microelectronic device Mar. 23, 2010
7663190 Tunable voltage isolation ground to ground ESD clamp Feb. 16, 2010
7595516 Optoelectronic circuit employing a heterojunction thyristor device to convert a digital optical signal to a digital electrical signal Sep. 29, 2009
7586150 Semiconductor devices with local recess channel transistors and methods of manufacturing the same Sep. 8, 2009
7531850 Semiconductor device including a memory cell with a negative differential resistance (NDR) device May. 12, 2009
7453104 Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit Nov. 18, 2008
7385230 Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit Jun. 10, 2008
7339203 Thyristor and method of manufacture Mar. 4, 2008
7312482 Semiconductor device, power amplifier device and PC card Dec. 25, 2007
7276778 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent Oct. 2, 2007
7259407 Isolated HF-control SCR switch Aug. 21, 2007
7193250 Light-emitting element having PNPN-structure and light-emitting element array Mar. 20, 2007
7145185 Voltage-controlled bidirectional switch Dec. 5, 2006
6963088 Semiconductor component Nov. 8, 2005
6593600 Responsive bidirectional static switch Jul. 15, 2003
6501099 Modified-anode gate turn-off thyristor Dec. 31, 2002
6169292 Thin film type monolithic semiconductor device Jan. 2, 2001
6124639 Flat interface for a metal-silicon contact barrier film Sep. 26, 2000
6066864 Thyristor with integrated dU/dt protection May. 23, 2000
6043516 Semiconductor component with scattering centers within a lateral resistor region Mar. 28, 2000
5998812 Amplifying-gate thyristor with an increased hold current Dec. 7, 1999
5861639 Breakover-triggered dipole component having a controlled sensitivity Jan. 19, 1999
5751022 Thyristor May. 12, 1998
5739555 Amplifying-gate thyristor with an increased hold current Apr. 14, 1998
5696391 Overload protection circuit Dec. 9, 1997
5682044 Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure Oct. 28, 1997
5365086 Thyristors having a common cathode Nov. 15, 1994
5003369 Thyristor of overvoltage self-protection type Mar. 26, 1991
4994884 Gate-controlled bi-directional semiconductor switching device Feb. 19, 1991
4956690 Zero crossing type thyristor Sep. 11, 1990

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