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Class Information
Number: 257/157
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)
Description: Subject matter wherein the regenerative switching device has means to amplify the control current of the device, which is physically integrated with the regenerative switching device.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7453104 |
Operational amplifier including low DC gain wideband feed forward circuit and high DC gain narrowband gain circuit |
Nov. 18, 2008 |
| 7385230 |
Modulation doped thyristor and complementary transistor combination for a monolithic optoelectronic integrated circuit |
Jun. 10, 2008 |
| 7339203 |
Thyristor and method of manufacture |
Mar. 4, 2008 |
| 7312482 |
Semiconductor device, power amplifier device and PC card |
Dec. 25, 2007 |
| 7276778 |
Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent |
Oct. 2, 2007 |
| 7259407 |
Isolated HF-control SCR switch |
Aug. 21, 2007 |
| 7193250 |
Light-emitting element having PNPN-structure and light-emitting element array |
Mar. 20, 2007 |
| 7145185 |
Voltage-controlled bidirectional switch |
Dec. 5, 2006 |
| 6963088 |
Semiconductor component |
Nov. 8, 2005 |
| 6593600 |
Responsive bidirectional static switch |
Jul. 15, 2003 |
| 6501099 |
Modified-anode gate turn-off thyristor |
Dec. 31, 2002 |
| 6169292 |
Thin film type monolithic semiconductor device |
Jan. 2, 2001 |
| 6124639 |
Flat interface for a metal-silicon contact barrier film |
Sep. 26, 2000 |
| 6066864 |
Thyristor with integrated dU/dt protection |
May. 23, 2000 |
| 6043516 |
Semiconductor component with scattering centers within a lateral resistor region |
Mar. 28, 2000 |
| 5998812 |
Amplifying-gate thyristor with an increased hold current |
Dec. 7, 1999 |
| 5861639 |
Breakover-triggered dipole component having a controlled sensitivity |
Jan. 19, 1999 |
| 5751022 |
Thyristor |
May. 12, 1998 |
| 5739555 |
Amplifying-gate thyristor with an increased hold current |
Apr. 14, 1998 |
| 5696391 |
Overload protection circuit |
Dec. 9, 1997 |
| 5682044 |
Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure |
Oct. 28, 1997 |
| 5365086 |
Thyristors having a common cathode |
Nov. 15, 1994 |
| 5003369 |
Thyristor of overvoltage self-protection type |
Mar. 26, 1991 |
| 4994884 |
Gate-controlled bi-directional semiconductor switching device |
Feb. 19, 1991 |
| 4956690 |
Zero crossing type thyristor |
Sep. 11, 1990 |
| 4914496 |
Gate turn-off thyristor with independent turn-on/off controlling transistors |
Apr. 3, 1990 |
| 4908687 |
Controlled turn-on thyristor |
Mar. 13, 1990 |
| 4825270 |
Gate turn-off thyristor |
Apr. 25, 1989 |
| 4760431 |
Gate turn-off thyristor with independent turn-on/off controlling transistors |
Jul. 26, 1988 |
| 4673844 |
Starter circuit for a fluorescent tube lamp |
Jun. 16, 1987 |
| 4574296 |
Gate turn-off thyristor with a cathode base layer having four distinct impurity concentrations |
Mar. 4, 1986 |
| 4559551 |
Semiconductor device |
Dec. 17, 1985 |
| 4555845 |
Temperature stable self-protected thyristor and method of producing |
Dec. 3, 1985 |
| 4502071 |
FET Controlled thyristor |
Feb. 26, 1985 |
| 4502072 |
FET Controlled thyristor |
Feb. 26, 1985 |
| 4500901 |
Thyristor having n.sup.+ - main and auxiliary emitters and a p.sup.+ ring forming a p.sup.+ n.sup.+ junction with the main emitter |
Feb. 19, 1985 |
| 4471372 |
FET Controlled Triac |
Sep. 11, 1984 |
| 4281336 |
Thyristor element with short turn-off time and method for producing such element |
Jul. 28, 1981 |
| 4223332 |
Thyristor having an anode transverse field emitter |
Sep. 16, 1980 |
| 4207583 |
Multiple gated light fired thyristor with non-critical light pipe coupling |
Jun. 10, 1980 |
| 4187517 |
Semiconductor component |
Feb. 5, 1980 |
| 4176371 |
Thyristor fired by overvoltage |
Nov. 27, 1979 |
| 4170020 |
Gate turn-off thyristor for reducing the on current thereof |
Oct. 2, 1979 |
| 4165517 |
Self-protection against breakover turn-on failure in thyristors through selective base lifetime control |
Aug. 21, 1979 |
| 4110638 |
Configuration for reducing the turn-off time of a thyristor |
Aug. 29, 1978 |
| 4097887 |
Low resistance, durable gate contact pad for thyristors |
Jun. 27, 1978 |
| 4096623 |
Thyristor and method of producing the same |
Jun. 27, 1978 |
| 4092703 |
Gate controlled semiconductor device |
May. 30, 1978 |
| 4087834 |
Self-protecting semiconductor device |
May. 2, 1978 |
| 4060825 |
High speed high power two terminal solid state switch fired by dV/dt |
Nov. 29, 1977 |
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