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Class Information
Number: 257/156
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With switching speed enhancement means (e.g., schottky contact) > Having deep level dopants or recombination centers
Description: Subject matter wherein the regenerative device has deep level dopants or electron-hole recombination centers with energy levels that are within the forbidden energy band and widely spaced from the conduction and valence bands of the semiconductor device.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8526220 Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform Sep. 3, 2013
8395186 Implementing vertical signal repeater transistors utilizing wire vias as gate nodes Mar. 12, 2013
8390124 Semiconductor device and method of manufacturing semiconductor device including wiring via and switch via for connecting first and second wirings Mar. 5, 2013
8362458 Nitirde semiconductor light emitting diode Jan. 29, 2013
8344415 Semiconductor component Jan. 1, 2013
8227832 SiGe heterojunction bipolar transistor multi-finger structure Jul. 24, 2012
8063441 Vertical type semiconductor device Nov. 22, 2011
7989841 Fast injection optical switch Aug. 2, 2011
7906796 Bipolar device and fabrication method thereof Mar. 15, 2011
7872315 Electronic switching device Jan. 18, 2011
7847315 High efficiency rectifier Dec. 7, 2010
7736977 Semiconductor device and a method for manufacturing therefor Jun. 15, 2010
7705369 High-voltage diode with optimized turn-off method and corresponding optimization method Apr. 27, 2010
7612388 Power semiconductor element with an emitter region and a stop zone in front of the emitter region Nov. 3, 2009
7592642 Thyristor-based semiconductor device with indium-carbon implant and method of fabrication Sep. 22, 2009
7589359 Silicon controlled rectifier Sep. 15, 2009
7560773 Semiconductor device Jul. 14, 2009
7485920 Process to create buried heavy metal at selected depth Feb. 3, 2009
7319250 Semiconductor component and method for producing the same Jan. 15, 2008
7276764 Semiconductor device with metal wire layer masking Oct. 2, 2007
7211837 Insulated gate semiconductor device May. 1, 2007
7075122 Thyristor device with carbon lifetime adjustment implant and its method of fabrication Jul. 11, 2006
6980457 Thyristor-based device having a reduced-resistance contact to a buried emitter region Dec. 27, 2005
6870199 Semiconductor device having an electrode overlaps a short carrier lifetime region Mar. 22, 2005
6864516 SOI MOSFET junction degradation using multiple buried amorphous layers Mar. 8, 2005
6774407 Semiconductor device with a suppressed increase in turned-on resistance and an improved turn-off response Aug. 10, 2004
6756612 Carrier coupler for thyristor-based semiconductor device Jun. 29, 2004
6605830 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein Aug. 12, 2003
6512251 Semiconductor switching element that blocks in both directions Jan. 28, 2003
6465871 Semiconductor switching device and method of controlling a carrier lifetime in a semiconductor switching device Oct. 15, 2002
6448588 Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode Sep. 10, 2002
6420774 Low junction capacitance semiconductor structure and I/O buffer Jul. 16, 2002
6373079 Thyristor with breakdown region Apr. 16, 2002
6339231 Gate commutated turn-off thyristor module Jan. 15, 2002
6313485 Gate-controlled thyristor Nov. 6, 2001
6274892 Devices formable by low temperature direct bonding Aug. 14, 2001
6239466 Insulated gate bipolar transistor for zero-voltage switching May. 29, 2001
6218683 Diode Apr. 17, 2001
6207997 Thin film transistor for antistatic circuit and method for fabricating the same Mar. 27, 2001
6104043 Schottky diode of SiC and a method for production thereof Aug. 15, 2000
6031276 Semiconductor device and method of manufacturing the same with stable control of lifetime carriers Feb. 29, 2000
5981984 Insulated gate thyristor Nov. 9, 1999
5952682 Semiconductor device with deep anode and lifetime reduction region Sep. 14, 1999
5900652 Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices May. 4, 1999
5883403 Power semiconductor device Mar. 16, 1999
5808352 Semiconductor apparatus having crystal defects Sep. 15, 1998
5808941 SRAM cell employing substantially vertically elongated pull-up resistors Sep. 15, 1998
5717244 Semiconductor device having layers with varying lifetime characteristics Feb. 10, 1998
5528058 IGBT device with platinum lifetime control and reduced gaw Jun. 18, 1996
5352910 Semiconductor device with a buffer structure Oct. 4, 1994

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