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Class Information
Number: 257/154
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With resistive region connecting separate sections of device
Description: Subject matter wherein the regenerative active junction type switching device has a resistive region or portion connecting discrete regions of the device.
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7442605 |
Resistively switching memory |
Oct. 28, 2008 |
| 7414258 |
Spacer electrode small pin phase change memory RAM and manufacturing method |
Aug. 19, 2008 |
| 7394110 |
Planar vertical resistor and bond pad resistor |
Jul. 1, 2008 |
| 7312483 |
Thin film transistor device and method of manufacturing the same |
Dec. 25, 2007 |
| 7303939 |
Electro- and electroless plating of metal in the manufacture of PCRAM devices |
Dec. 4, 2007 |
| 7170106 |
Power semiconductor device |
Jan. 30, 2007 |
| 7078740 |
Power semiconductor device |
Jul. 18, 2006 |
| 7064359 |
Switching semiconductor device and switching circuit |
Jun. 20, 2006 |
| 7005686 |
Mixed voltage tolerant electrostatic discharge protection silicon controlled rectifier with enhanced turn-on time |
Feb. 28, 2006 |
| 6987289 |
High-density FinFET integration scheme |
Jan. 17, 2006 |
| 6921962 |
Integrated circuit having a thin film resistor located within a multilevel dielectric between an upper and lower metal interconnect layer |
Jul. 26, 2005 |
| 6847094 |
Contact structure on a deep region formed in a semiconductor substrate |
Jan. 25, 2005 |
| 6809349 |
Power semiconductor device |
Oct. 26, 2004 |
| 6774434 |
Field effect device having a drift region and field shaping region used as capacitor dielectric |
Aug. 10, 2004 |
| 6750477 |
Static induction transistor |
Jun. 15, 2004 |
| 6710418 |
Schottky rectifier with insulation-filled trenches and method of forming the same |
Mar. 23, 2004 |
| 6696702 |
Silicon carbide semiconductor switching device |
Feb. 24, 2004 |
| 6677608 |
Semiconductor device for detecting gate defects |
Jan. 13, 2004 |
| 6614073 |
SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPP |
Sep. 2, 2003 |
| 6504185 |
Compound semiconductor device and method for controlling characteristics of the same |
Jan. 7, 2003 |
| 6373079 |
Thyristor with breakdown region |
Apr. 16, 2002 |
| 6365956 |
Resistor element comprising peripheral contacts |
Apr. 2, 2002 |
| 6252257 |
Isolating wall between power components |
Jun. 26, 2001 |
| 6225649 |
Insulated-gate bipolar semiconductor device |
May. 1, 2001 |
| 6147369 |
SCR and current divider structure of electrostatic discharge protective circuit |
Nov. 14, 2000 |
| 6127722 |
Chip type resistor |
Oct. 3, 2000 |
| 6049096 |
Protection component for telephone line interface |
Apr. 11, 2000 |
| 6043516 |
Semiconductor component with scattering centers within a lateral resistor region |
Mar. 28, 2000 |
| 6015992 |
Bistable SCR-like switch for ESD protection of silicon-on-insulator integrated circuits |
Jan. 18, 2000 |
| 5998812 |
Amplifying-gate thyristor with an increased hold current |
Dec. 7, 1999 |
| 5986290 |
Silicon controlled rectifier with reduced substrate current |
Nov. 16, 1999 |
| 5925899 |
Vertical type insulated gate bipolar transistor having a planar gate structure |
Jul. 20, 1999 |
| 5914502 |
Assembly of thyristors having a common cathode |
Jun. 22, 1999 |
| 5883401 |
Monolithic semiconductor switch and supply circuit component |
Mar. 16, 1999 |
| 5880488 |
Segmented silicon-control-rectifier (SCR) electrostatic discharge (ESD) protection circuit |
Mar. 9, 1999 |
| 5877515 |
SiC semiconductor device |
Mar. 2, 1999 |
| 5835985 |
Reverse conducting gate-turnoff thyristor |
Nov. 10, 1998 |
| 5767537 |
Capacitively triggered silicon controlled rectifier circuit |
Jun. 16, 1998 |
| 5751022 |
Thyristor |
May. 12, 1998 |
| 5739555 |
Amplifying-gate thyristor with an increased hold current |
Apr. 14, 1998 |
| 5719411 |
Three-terminal MOS-gate controlled thyristor structures with current saturation characteristics |
Feb. 17, 1998 |
| 5665987 |
Insulated gate static induction thyristor with a split gate type shorted cathode structure |
Sep. 9, 1997 |
| 5637892 |
Electrostatic discharge protection in integrated circuits, systems and methods |
Jun. 10, 1997 |
| 5614738 |
Insulated gate thyristor having a polysilicon resistor connected to its base |
Mar. 25, 1997 |
| 5592006 |
Gate resistor for IGBT |
Jan. 7, 1997 |
| 5574297 |
Gate turnoff thyristor with reduced gate trigger current |
Nov. 12, 1996 |
| 5569940 |
AC switch triggered at a predetermined half-period |
Oct. 29, 1996 |
| 5530270 |
Substrate for semiconductr device |
Jun. 25, 1996 |
| 5528058 |
IGBT device with platinum lifetime control and reduced gaw |
Jun. 18, 1996 |
| 5498884 |
MOS-controlled thyristor with current saturation characteristics |
Mar. 12, 1996 |
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