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Class Information
Number: 257/152
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With extended latchup current level (e.g., gate turn off "gto" device) > Cathode emitter or cathode electrode feature
Description: Subject matter wherein the extended latchup current level device has a particular cathode emitter or cathode electrode feature.










Patents under this class:
1 2 3

Patent Number Title Of Patent Date Issued
8415710 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Apr. 9, 2013
8410002 Semiconductor device and manufacturing method thereof Apr. 2, 2013
8330155 Semiconductor devices having channel layer patterns on a gate insulation layer Dec. 11, 2012
8093622 Semiconductor device and its driving method Jan. 10, 2012
8089139 Small outline package in which MOSFET and Schottky diode being co-packaged Jan. 3, 2012
7999285 Insulated gate bipolar transistor and method for manufacturing the same Aug. 16, 2011
7906796 Bipolar device and fabrication method thereof Mar. 15, 2011
7884389 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method Feb. 8, 2011
7795047 Current balancing in NPN BJT and BSCR snapback devices Sep. 14, 2010
7759194 Electrically programmable device with embedded EEPROM and method for making thereof Jul. 20, 2010
7732833 High-voltage semiconductor switching element Jun. 8, 2010
7692211 Super GTO-based power blocks Apr. 6, 2010
7560773 Semiconductor device Jul. 14, 2009
7485921 Trench gate type MOS transistor semiconductor device Feb. 3, 2009
7429761 High power diode utilizing secondary emission Sep. 30, 2008
7400017 Reverse conducting semiconductor device and a fabrication method thereof Jul. 15, 2008
7332749 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor Feb. 19, 2008
7276778 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent Oct. 2, 2007
7259440 Fast switching diode with low leakage current Aug. 21, 2007
7250628 Memory devices and electronic systems comprising thyristors Jul. 31, 2007
7135717 Semiconductor switches and switching circuits for microwave Nov. 14, 2006
6921943 System and method for reducing soft error rate utilizing customized epitaxial layers Jul. 26, 2005
6774434 Field effect device having a drift region and field shaping region used as capacitor dielectric Aug. 10, 2004
6737705 Insulated gate semiconductor device May. 18, 2004
6727526 Thyristor with recovery time voltage surge resistance Apr. 27, 2004
6677622 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure Jan. 13, 2004
6657239 Power-switching semiconductor device Dec. 2, 2003
6476429 Semiconductor device with breakdown voltage improved by hetero region Nov. 5, 2002
6429501 Semiconductor device having high breakdown voltage and method for manufacturing the device Aug. 6, 2002
6313485 Gate-controlled thyristor Nov. 6, 2001
6278140 Insulated gate thyristor Aug. 21, 2001
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior Aug. 7, 2001
6258634 Method for manufacturing a dual-direction over-voltage and over-current IC protection device and its cell structure Jul. 10, 2001
6236069 Insulated-gate thyristor May. 22, 2001
6180965 Semiconductor device having a static induction in a recessed portion Jan. 30, 2001
6172381 Source/drain junction areas self aligned between a sidewall spacer and an etched lateral sidewall Jan. 9, 2001
6147369 SCR and current divider structure of electrostatic discharge protective circuit Nov. 14, 2000
6111278 Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up Aug. 29, 2000
6111290 Semiconductor device having high breakdown voltage and method of manufacturing the same Aug. 29, 2000
6054728 Insulated gate thyristor Apr. 25, 2000
5998811 Trench emitter controlled thyristor Dec. 7, 1999
5981984 Insulated gate thyristor Nov. 9, 1999
5977569 Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability Nov. 2, 1999
5939736 Insulated gate thyristor Aug. 17, 1999
5936267 Insulated gate thyristor Aug. 10, 1999
5923055 Controllable semiconductor component Jul. 13, 1999
5894141 Bipolar semiconductor power controlling devices with heterojunction Apr. 13, 1999
5894149 Semiconductor device having high breakdown voltage and method of manufacturing the same Apr. 13, 1999
5874751 Insulated gate thyristor Feb. 23, 1999
5856683 MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element Jan. 5, 1999

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