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Class Information
Number: 257/150
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With extended latchup current level (e.g., gate turn off "gto" device) > With specified housing or external terminal
Description: Subject matter wherein the regenerative switching device is provided with means to enclose it or a terminal means located external to an enclosure for the device.










Sub-classes under this class:

Class Number Class Name Patents
257/151 External gate terminal structure or composition 38


Patents under this class:

Patent Number Title Of Patent Date Issued
8610261 Power semiconductor device Dec. 17, 2013
8519433 Semiconductor switching device with gate connection Aug. 27, 2013
8400778 Layout schemes and apparatus for multi-phase power switch-mode voltage regulator Mar. 19, 2013
8319333 Power semiconductor module Nov. 27, 2012
8299603 Power semiconductor device Oct. 30, 2012
8299601 Power semiconductor module and manufacturing method thereof Oct. 30, 2012
8258618 Power semiconductor module Sep. 4, 2012
8253236 Power semiconductor device Aug. 28, 2012
8222741 Semiconductor module with current connection element Jul. 17, 2012
8198119 Method for fabricating sensitive image sensor with non-uniform focal length Jun. 12, 2012
7692293 Semiconductor switching module Apr. 6, 2010
7692211 Super GTO-based power blocks Apr. 6, 2010
7579689 Integrated circuit package, and a method for producing an integrated circuit package having two dies with input and output terminals of integrated circuits of the dies directly addressable for Aug. 25, 2009
7573107 Power module Aug. 11, 2009
7560773 Semiconductor device Jul. 14, 2009
7470939 Semiconductor device Dec. 30, 2008
7449726 Power semiconductor apparatus Nov. 11, 2008
7256489 Semiconductor apparatus Aug. 14, 2007
7091580 Semiconductor device Aug. 15, 2006
7034345 High-power, integrated AC switch module with distributed array of hybrid devices Apr. 25, 2006
6995409 Module for high voltage power for converting a base of IGBT components Feb. 7, 2006
6933541 Emitter turn-off thyristors (ETO) Aug. 23, 2005
6930333 Semiconductor device wiring structure Aug. 16, 2005
6914325 Power semiconductor module Jul. 5, 2005
6885079 Methods and configuration to simplify connections between polysilicon layer and diffusion area Apr. 26, 2005
6787815 High-isolation semiconductor device Sep. 7, 2004
6624448 Semiconductor device with multiple supporting points Sep. 23, 2003
6611006 Vertical component peripheral structure Aug. 26, 2003
6605870 Pressure-contact type semiconductor device Aug. 12, 2003
6445013 Gate commutated turn-off semiconductor device Sep. 3, 2002
6323547 Pressure contact type semiconductor device with ringshaped gate terminal Nov. 27, 2001
6166402 Pressure-contact type semiconductor element and power converter thereof Dec. 26, 2000
6128200 Butt-joint CPU mounting structure Oct. 3, 2000
5821618 Semiconductor component with insulating housing Oct. 13, 1998
5777351 Compression bonded type semiconductor element and semiconductor device Jul. 7, 1998
5739556 Pressure contact housing for semiconductor components Apr. 14, 1998
5652467 Semiconductor device and package structure therefore and power inverter having semiconductor device Jul. 29, 1997
5554863 Gate turn-off thyristor Sep. 10, 1996
5345096 Turn-off high-power semiconductor component with low inductive housing Sep. 6, 1994
5221851 Controlled-turn-off high-power semiconductor component Jun. 22, 1993
5132768 Semiconductor component with turn-off facility Jul. 21, 1992
5063436 Pressure-contacted semiconductor component Nov. 5, 1991
4885630 High power multi-layer semiconductive switching device having multiple parallel contacts with improved forward voltage drop Dec. 5, 1989
4884126 Semiconductor device having parallel-connected, self turn-off type semiconductor elements Nov. 28, 1989
4127863 Gate turn-off type thyristor with separate semiconductor resistive wafer providing emitter ballast Nov. 28, 1978











 
 
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