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Class Information
Number: 257/15
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Thin active physical layer which is (1) an active potential well layer thin enough to establish discrete quantum energy levels or (2) an active barrier layer thin enough to permit quantum mechanical tunneling or (3) an active layer thin enough to permit carrier transmission with substantially no scattering (e.g., superlattice quantum well, or ballistic transport device) > Heterojunction > Quantum well > Superlattice
Description: Subject matter wherein a large number of quantum wells are present, the quantum wells being sufficiently close to each other that carrier quantum wave functions are spread out over plural quantum wells and the intervening barriers formed by the boundaries between adjacent layers having different carrier affinities.










Sub-classes under this class:

Class Number Class Name Patents
257/20 Field effect device 382
257/21 Light responsive structure 706
257/16 Of amorphous semiconductor material 77
257/18 Strained layer superlattice 408
257/17 With particular barrier dimension 419
257/22 With specified semiconductor materials 581


Patents under this class:
1 2 3 4 5 6 7 8 9

Patent Number Title Of Patent Date Issued
8710489 Epitaxial substrate for electronic device, in which current flows in lateral direction and method of producing the same Apr. 29, 2014
8704210 Boundary-modulated nanoparticle junctions and a method for manufacture thereof Apr. 22, 2014
8704268 Semiconductor light emitting device Apr. 22, 2014
8692228 Semiconductor light emitting device and wafer Apr. 8, 2014
8686397 Low droop light emitting diode structure on gallium nitride semipolar substrates Apr. 1, 2014
8674338 Semiconductor light emitting device Mar. 18, 2014
8674337 Gallium nitride based light emitting diode and fabrication method thereof Mar. 18, 2014
8659004 Light emitting diode, light emitting diode lamp, and illuminating apparatus Feb. 25, 2014
8652958 Vertical deep ultraviolet light emitting diodes Feb. 18, 2014
8633469 Group III nitride semiconductor light-emitting device Jan. 21, 2014
8604461 Semiconductor device structures with modulated doping and related methods Dec. 10, 2013
8592800 Optical devices featuring nonpolar textured semiconductor layers Nov. 26, 2013
8575594 Light emitting diode having a barrier layer with a superlattice structure Nov. 5, 2013
8569740 High efficiency thermoelectric materials and devices Oct. 29, 2013
8558215 Light emitting device, light emitting device package, method of manufacturing light emitting device and lighting system Oct. 15, 2013
8546787 Group III nitride based quantum well light emitting device structures with an indium containing capping structure Oct. 1, 2013
8525221 LED with improved injection efficiency Sep. 3, 2013
8519380 Low thermal conductivity material Aug. 27, 2013
8513643 Mixed alloy defect redirection region and devices including same Aug. 20, 2013
8502193 Light-emitting device and fabricating method thereof Aug. 6, 2013
8492746 Light emitting diode (LED) dice having wavelength conversion layers Jul. 23, 2013
8487295 Semiconductor structures and devices including semiconductor material on a non-glassy bonding layer Jul. 16, 2013
8436334 Fabrication of phosphor free red and white nitride-based LEDs May. 7, 2013
8426225 Semiconductor material doping based on target valence band discontinuity Apr. 23, 2013
8421058 Light emitting diode structure having superlattice with reduced electron kinetic energy therein Apr. 16, 2013
8415655 Semiconductor light emitting device Apr. 9, 2013
8415657 Enhanced work function layer supporting growth of rutile phase titanium oxide Apr. 9, 2013
8410473 Light emitting device Apr. 2, 2013
8410472 Epitaxial substrate for electronic device and method of producing the same Apr. 2, 2013
8405064 Nitride semiconductor device Mar. 26, 2013
8405065 LED semiconductor body Mar. 26, 2013
8405067 Nitride semiconductor element Mar. 26, 2013
8405068 Reflecting light emitting structure and method of manufacture thereof Mar. 26, 2013
8362503 Thick nitride semiconductor structures with interlayer structures Jan. 29, 2013
8350393 Apparatus and method for predetermined component placement to a target platform Jan. 8, 2013
8350277 Light emitting element Jan. 8, 2013
8350252 Boundary-modulated nanoparticle junctions and a method for manufacture thereof Jan. 8, 2013
8331142 Memory Dec. 11, 2012
8324611 Semiconductor light emitting device and wafer Dec. 4, 2012
8314415 Radiation-emitting semiconductor body Nov. 20, 2012
8304817 Field effect transistor and method for manufacturing the same Nov. 6, 2012
8294164 Light-emitting device using clad layer consisting of asymmetrical units Oct. 23, 2012
8283653 Non-planar germanium quantum well devices Oct. 9, 2012
8278646 Nitride semiconductor light emitting device and fabrication method thereof Oct. 2, 2012
8274088 Surface-emitting laser element, fabrication method thereof, surface-emitting laser array, and fabrication method thereof Sep. 25, 2012
8274069 Nitride semiconductor light emitting device Sep. 25, 2012
8263965 Single-crystal semiconductor layer with heteroatomic macro-network Sep. 11, 2012
8247793 ZnO-based thin film and ZnO-based semiconductor element Aug. 21, 2012
8247794 Nitride semiconductor device Aug. 21, 2012
8242484 Vertical deep ultraviolet light emitting diodes Aug. 14, 2012

1 2 3 4 5 6 7 8 9










 
 
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