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Class Information
Number: 257/148
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With extended latchup current level (e.g., gate turn off "gto" device) > Having impurity doping for gain reduction
Description: Subject matter wherein the regenerative switching device has impurity dopant to reduce device gain of one of the equivalent transistors.

Patents under this class:

Patent Number Title Of Patent Date Issued
8633521 Self-bootstrapping field effect diode structures and methods Jan. 21, 2014
8519373 Memory cells Aug. 27, 2013
8198119 Method for fabricating sensitive image sensor with non-uniform focal length Jun. 12, 2012
7915603 Modifiable gate stack memory element Mar. 29, 2011
7612388 Power semiconductor element with an emitter region and a stop zone in front of the emitter region Nov. 3, 2009
7592642 Thyristor-based semiconductor device with indium-carbon implant and method of fabrication Sep. 22, 2009
7589359 Silicon controlled rectifier Sep. 15, 2009
7560773 Semiconductor device Jul. 14, 2009
7429760 Variable mask device for crystallizing silicon layer Sep. 30, 2008
7135367 Manufacturing method of semiconductor device Nov. 14, 2006
6703642 Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state Mar. 9, 2004
6617641 High voltage semiconductor device capable of increasing a switching speed Sep. 9, 2003
6550949 Systems and components for enhancing rear vision from a vehicle Apr. 22, 2003
6512251 Semiconductor switching element that blocks in both directions Jan. 28, 2003
6448588 Insulated gate bipolar transistor having high breakdown voltage in reverse blocking mode Sep. 10, 2002
6208447 Optical receiver Mar. 27, 2001
6043516 Semiconductor component with scattering centers within a lateral resistor region Mar. 28, 2000
5981868 Thin-film solar cell comprising thin-film light absorbing layer of chalcopyrite multi-element compound semiconductor Nov. 9, 1999
5900652 Apparatus for the localized reduction of the lifetime of charge carriers, particularly in integrated electronic devices May. 4, 1999
5757037 Power thyristor with MOS gated turn-off and MOS-assised turn-on May. 26, 1998
5682044 Reverse conducting thyristor with a planar-gate, buried-gate, or recessed-gate structure Oct. 28, 1997
5610415 Turn-off semiconductor component having amphoteric properties Mar. 11, 1997
5559346 Field-effect semiconductor device with increased breakdown voltage Sep. 24, 1996
5528058 IGBT device with platinum lifetime control and reduced gaw Jun. 18, 1996
5466951 Controllable power semiconductor element with buffer zone and method for the manufacture thereof Nov. 14, 1995
5466951 Controllable power semiconductor element with buffer zone and method for the manufacture thereof Nov. 14, 1995
5393995 Semiconductor thyristor device with recess Feb. 28, 1995
5381026 Insulated-gate thyristor Jan. 10, 1995
5352910 Semiconductor device with a buffer structure Oct. 4, 1994
4961053 Circuit arrangement for testing integrated circuit components Oct. 2, 1990
4782379 Semiconductor device having rapid removal of majority carriers from an active base region thereof at device turn-off and method of fabricating this device Nov. 1, 1988
4757025 Method of making gate turn off switch with anode short and buried base Jul. 12, 1988
4713679 Reverse blocking type semiconductor device Dec. 15, 1987
4617583 Gate turn-off thyristor Oct. 14, 1986
4609933 Gate turn-off thyristor having P.sup.+ gate and emitter Sep. 2, 1986
4605451 Process for making thyristor devices Aug. 12, 1986
4517582 Asymmetrical thyristor with highly doped anode base layer region for optimized blocking and forward voltages May. 14, 1985
4502070 FET Controlled thyristor Feb. 26, 1985
4356503 Latching transistor Oct. 26, 1982
4243999 Gate turn-off thyristor Jan. 6, 1981
4177478 Amplifying gate thyristor with gate turn-off (G.T.O.) Dec. 4, 1979
4156248 Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion May. 22, 1979

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