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Class Information
Number: 257/147
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With extended latchup current level (e.g., gate turn off "gto" device)
Description: Subject matter wherein the regenerative switching device includes means to provide regenerative action without latchup over an extended current range of the device, i.e., extends IH
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7582939 |
Semiconductor diode, electronic component and voltage source inverter |
Sep. 1, 2009 |
| 7560773 |
Semiconductor device |
Jul. 14, 2009 |
| 7544970 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
Jun. 9, 2009 |
| 7498614 |
Voltage sustaining layer with opposite-doped islands for semiconductor power devices |
Mar. 3, 2009 |
| 7462888 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
Dec. 9, 2008 |
| 7462886 |
Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device |
Dec. 9, 2008 |
| 7456439 |
Vertical thyristor-based memory with trench isolation and its method of fabrication |
Nov. 25, 2008 |
| 7391057 |
High voltage silicon carbide devices having bi-directional blocking capabilities |
Jun. 24, 2008 |
| 7335947 |
Angled implant for shorter trench emitter |
Feb. 26, 2008 |
| 7309898 |
Method and apparatus for providing noise suppression in an integrated circuit |
Dec. 18, 2007 |
| 7242036 |
Semiconductor element |
Jul. 10, 2007 |
| 7227197 |
Semiconductor high-voltage devices |
Jun. 5, 2007 |
| 7173290 |
Thyristor switch with turn-off current shunt, and operating method |
Feb. 6, 2007 |
| 7144792 |
Method and apparatus for fabricating and connecting a semiconductor power switching device |
Dec. 5, 2006 |
| 7126204 |
Integrated semiconductor circuit with an electrically programmable switching element |
Oct. 24, 2006 |
| RE38953 |
Insulated gate semiconductor device and method of manufacturing the same |
Jan. 31, 2006 |
| 6936867 |
Semiconductor high-voltage devices |
Aug. 30, 2005 |
| 6933541 |
Emitter turn-off thyristors (ETO) |
Aug. 23, 2005 |
| 6900477 |
Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture |
May. 31, 2005 |
| 6861706 |
Compensation semiconductor component |
Mar. 1, 2005 |
| 6727529 |
Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches |
Apr. 27, 2004 |
| 6727528 |
Thyristor-based device including trench dielectric isolation for thyristor-body regions |
Apr. 27, 2004 |
| 6713791 |
T-RAM array having a planar cell structure and method for fabricating the same |
Mar. 30, 2004 |
| 6703642 |
Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state |
Mar. 9, 2004 |
| 6696705 |
Power semiconductor component having a mesa edge termination |
Feb. 24, 2004 |
| 6690038 |
Thyristor-based device over substrate surface |
Feb. 10, 2004 |
| 6683348 |
Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter |
Jan. 27, 2004 |
| 6677622 |
Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure |
Jan. 13, 2004 |
| 6657239 |
Power-switching semiconductor device |
Dec. 2, 2003 |
| 6635906 |
Voltage sustaining layer with opposite-doped islands for semi-conductor power devices |
Oct. 21, 2003 |
| 6605830 |
Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein |
Aug. 12, 2003 |
| 6583452 |
Thyristor-based device having extended capacitive coupling |
Jun. 24, 2003 |
| 6580101 |
GaN-based compound semiconductor device |
Jun. 17, 2003 |
| 6570193 |
Reverse conducting thyristor device, pressure-connection type semiconductor device and semiconductor substrate |
May. 27, 2003 |
| 6528826 |
Depletion type MOS semiconductor device and MOS power IC |
Mar. 4, 2003 |
| 6525374 |
Semiconductor component with a high breakdown voltage |
Feb. 25, 2003 |
| 6521919 |
Semiconductor device of reduced thermal resistance and increased operating area |
Feb. 18, 2003 |
| 6501099 |
Modified-anode gate turn-off thyristor |
Dec. 31, 2002 |
| 6469344 |
Semiconductor device having low on resistance high speed turn off and short switching turn off storage time |
Oct. 22, 2002 |
| 6448586 |
Semiconductor current-switching device having operational enhancer and method therefor |
Sep. 10, 2002 |
| 6445013 |
Gate commutated turn-off semiconductor device |
Sep. 3, 2002 |
| 6441408 |
Power semiconductor component for high reverse voltages |
Aug. 27, 2002 |
| 6423986 |
Field-controlled high-power semiconductor devices |
Jul. 23, 2002 |
| 6384431 |
Insulated gate bipolar transistor |
May. 7, 2002 |
| 6359306 |
Semiconductor device and method of manufacturing thereof |
Mar. 19, 2002 |
| 6355948 |
Semiconductor integrated circuit device |
Mar. 12, 2002 |
| 6339231 |
Gate commutated turn-off thyristor module |
Jan. 15, 2002 |
| 6323547 |
Pressure contact type semiconductor device with ringshaped gate terminal |
Nov. 27, 2001 |
| 6271545 |
Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior |
Aug. 7, 2001 |
| 6252259 |
Semiconductor switching device having different carrier lifetimes between a first portion serving as a main current path and the remaining portion of the device |
Jun. 26, 2001 |
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