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Class Information
Number: 257/147
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > With extended latchup current level (e.g., gate turn off "gto" device)
Description: Subject matter wherein the regenerative switching device includes means to provide regenerative action without latchup over an extended current range of the device, i.e., extends IH










Sub-classes under this class:

Class Number Class Name Patents
257/152 Cathode emitter or cathode electrode feature 133
257/153 Gate region or electrode feature 148
257/149 Having anode shunt means 83
257/148 Having impurity doping for gain reduction 41
257/150 With specified housing or external terminal 45


Patents under this class:
1 2 3 4 5

Patent Number Title Of Patent Date Issued
8685800 Single event latch-up prevention techniques for a semiconductor device Apr. 1, 2014
8604584 Semiconductor device and method of manufacturing semiconductor device Dec. 10, 2013
8575702 Semiconductor device and method for fabricating semiconductor device Nov. 5, 2013
RE44547 Semiconductor device having deep trench charge compensation regions and method Oct. 22, 2013
8552435 Electronic device structure including a buffer layer on a base layer Oct. 8, 2013
8530930 Semiconductor device having plural insulated gate switching cells and method for designing the same Sep. 10, 2013
8217420 Power semiconductor device Jul. 10, 2012
8110852 Semiconductor integrated circuit device Feb. 7, 2012
7999285 Insulated gate bipolar transistor and method for manufacturing the same Aug. 16, 2011
7968940 Insulated gate bipolar transistor device comprising a depletion-mode MOSFET Jun. 28, 2011
7943956 Semiconductor device comprising a housing containing a triggering unit May. 17, 2011
7902601 Semiconductor device having deep trench charge compensation regions and method Mar. 8, 2011
7834377 Semiconductor integrated circuit device Nov. 16, 2010
7816706 Power semiconductor device Oct. 19, 2010
7732833 High-voltage semiconductor switching element Jun. 8, 2010
7705368 Insulated gate type thyristor Apr. 27, 2010
7696530 Dual-gate sensor Apr. 13, 2010
7692211 Super GTO-based power blocks Apr. 6, 2010
7582939 Semiconductor diode, electronic component and voltage source inverter Sep. 1, 2009
7560773 Semiconductor device Jul. 14, 2009
7544970 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device Jun. 9, 2009
7498614 Voltage sustaining layer with opposite-doped islands for semiconductor power devices Mar. 3, 2009
7462886 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device Dec. 9, 2008
7462888 Semiconductor device and method of producing the same, and power conversion apparatus incorporating this semiconductor device Dec. 9, 2008
7456439 Vertical thyristor-based memory with trench isolation and its method of fabrication Nov. 25, 2008
7391057 High voltage silicon carbide devices having bi-directional blocking capabilities Jun. 24, 2008
7335947 Angled implant for shorter trench emitter Feb. 26, 2008
7309898 Method and apparatus for providing noise suppression in an integrated circuit Dec. 18, 2007
7242036 Semiconductor element Jul. 10, 2007
7227197 Semiconductor high-voltage devices Jun. 5, 2007
7173290 Thyristor switch with turn-off current shunt, and operating method Feb. 6, 2007
7144792 Method and apparatus for fabricating and connecting a semiconductor power switching device Dec. 5, 2006
7126204 Integrated semiconductor circuit with an electrically programmable switching element Oct. 24, 2006
RE38953 Insulated gate semiconductor device and method of manufacturing the same Jan. 31, 2006
6936867 Semiconductor high-voltage devices Aug. 30, 2005
6933541 Emitter turn-off thyristors (ETO) Aug. 23, 2005
6900477 Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture May. 31, 2005
6861706 Compensation semiconductor component Mar. 1, 2005
6727528 Thyristor-based device including trench dielectric isolation for thyristor-body regions Apr. 27, 2004
6727529 Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches Apr. 27, 2004
6713791 T-RAM array having a planar cell structure and method for fabricating the same Mar. 30, 2004
6703642 Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state Mar. 9, 2004
6696705 Power semiconductor component having a mesa edge termination Feb. 24, 2004
6690038 Thyristor-based device over substrate surface Feb. 10, 2004
6683348 Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter Jan. 27, 2004
6677622 Semiconductor device having insulated gate bipolar transistor with dielectric isolation structure Jan. 13, 2004
6657239 Power-switching semiconductor device Dec. 2, 2003
6635906 Voltage sustaining layer with opposite-doped islands for semi-conductor power devices Oct. 21, 2003
6605830 Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein Aug. 12, 2003
6583452 Thyristor-based device having extended capacitive coupling Jun. 24, 2003

1 2 3 4 5










 
 
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