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Class Information
Number: 257/145
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > With extended latchup current level (e.g., comfet device) > Low impedance channel contact extends below surface
Description: Subject matter wherein the extended latchup current level device has an electrical contact extending from the device surface into the body of the device which is connected to the channel of the field effect transistor portion and wherein the contact has a relatively low electrical impedance.










Patents under this class:

Patent Number Title Of Patent Date Issued
8685809 Semiconductor structures having improved contact resistance Apr. 1, 2014
8671565 Blind via capture pad structure fabrication method Mar. 18, 2014
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8299455 Semiconductor structures having improved contact resistance Oct. 30, 2012
8247840 Apparatus and method for improved leakage current of silicon on insulator transistors using a forward biased diode Aug. 21, 2012
6579729 Memory cell configuration and method for fabricating it Jun. 17, 2003
5751022 Thyristor May. 12, 1998
5661314 Power transistor device having ultra deep increased concentration Aug. 26, 1997
5654561 Insulated gate bipolar transistor with multiple buffer layers Aug. 5, 1997
5559346 Field-effect semiconductor device with increased breakdown voltage Sep. 24, 1996
5160985 Insulated gate bipolar transistor Nov. 3, 1992
5121176 MOSFET structure having reduced gate capacitance Jun. 9, 1992
5111258 Semiconductor device with a multi-stepped source region and method for producing the same May. 5, 1992
4975782 Field effect controlled, bipolar power semiconductor component with silicide layer Dec. 4, 1990
4903112 Semiconductor component with contact hole Feb. 20, 1990
4866492 Low loss fet Sep. 12, 1989
4823172 Vertical MOSFET having Schottky diode for latch-up prevention Apr. 18, 1989
4821095 Insulated gate semiconductor device with extra short grid and method of fabrication Apr. 11, 1989
4809047 Insulated-gate semiconductor device with improved base-to-source electrode short and method of fabricating said short Feb. 28, 1989
4785344 Semi-conductor component with contact hole Nov. 15, 1988
4441115 Thyristor having a center pn junction formed by plastic deformation of the crystal lattice Apr. 3, 1984
4086611 Static induction type thyristor Apr. 25, 1978











 
 
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