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Class Information
Number: 257/144
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > With extended latchup current level (e.g., comfet device) > Cathode emitter or cathode electrode feature
Description: Subject matter wherein the extended latchup current level device has a particular cathode emitter or cathode electrode feature.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8618576 Semiconductor device with back side metal structure Dec. 31, 2013
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8294142 Organic EL device Oct. 23, 2012
8283696 Integrated low leakage diode Oct. 9, 2012
8138521 Thyristor semiconductor device and switching method thereof Mar. 20, 2012
7842968 Integrated low leakage diode Nov. 30, 2010
7485921 Trench gate type MOS transistor semiconductor device Feb. 3, 2009
7354781 Method of manufacturing field emission device Apr. 8, 2008
7332749 Junction-gate type static induction thyristor and high-voltage pulse generator using such junction-gate type static induction thyristor Feb. 19, 2008
7276778 Semiconductor system functioning as thyristor in on-state, and as bipolar transistor in transient state or with overcurrent Oct. 2, 2007
7259440 Fast switching diode with low leakage current Aug. 21, 2007
7250628 Memory devices and electronic systems comprising thyristors Jul. 31, 2007
7056753 Field emission display with double gate structure and method of manufacturing therefor Jun. 6, 2006
7045830 High-voltage diodes formed in advanced power integrated circuit devices May. 16, 2006
6885079 Methods and configuration to simplify connections between polysilicon layer and diffusion area Apr. 26, 2005
6847058 Semiconductor device Jan. 25, 2005
6727526 Thyristor with recovery time voltage surge resistance Apr. 27, 2004
6670650 Power semiconductor rectifier with ring-shaped trenches Dec. 30, 2003
6509578 Method and structure for limiting emission current in field emission devices Jan. 21, 2003
6495864 High-voltage semiconductor component, method for the production and use thereof Dec. 17, 2002
6437419 Emitter ballast resistor with enhanced body effect to improve the short circuit withstand capability of power devices Aug. 20, 2002
6429501 Semiconductor device having high breakdown voltage and method for manufacturing the device Aug. 6, 2002
6403988 Semiconductor device with reverse conducting faculty Jun. 11, 2002
6392250 Organic light emitting devices having improved performance May. 21, 2002
6281546 Insulated gate field effect transistor and manufacturing method of the same Aug. 28, 2001
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior Aug. 7, 2001
6218217 Semiconductor device having high breakdown voltage and method of manufacturing the same Apr. 17, 2001
6198115 IGBT with reduced forward voltage drop and reduced switching loss Mar. 6, 2001
6180965 Semiconductor device having a static induction in a recessed portion Jan. 30, 2001
6169299 Semiconductor device Jan. 2, 2001
6147369 SCR and current divider structure of electrostatic discharge protective circuit Nov. 14, 2000
6111278 Power semiconductor devices having discontinuous emitter regions therein for inhibiting parasitic thyristor latch-up Aug. 29, 2000
RE36818 Insulated gate semiconductor device with stripe widths Aug. 15, 2000
6078065 Bilaterally controllable thyristor Jun. 20, 2000
5909039 Insulated gate bipolar transistor having a trench Jun. 1, 1999
5894149 Semiconductor device having high breakdown voltage and method of manufacturing the same Apr. 13, 1999
5856683 MOS-controlled thyristor using a source cathode elecrode as the gate electrode of a MOSFET element Jan. 5, 1999
5780877 Break-over photodiode Jul. 14, 1998
5763902 Insulated gate bipolar transistor having a trench and a method for production thereof Jun. 9, 1998
5679966 Depleted base transistor with high forward voltage blocking capability Oct. 21, 1997
5661314 Power transistor device having ultra deep increased concentration Aug. 26, 1997
5648665 Semiconductor device having a plurality of cavity defined gating regions and a fabrication method therefor Jul. 15, 1997
5644149 Anode-side short structure for asymmetric thyristors Jul. 1, 1997
5637887 Silicon controller rectifier (SCR) with capacitive trigger Jun. 10, 1997
5637888 Insulated gate thyristor Jun. 10, 1997
5635734 Insulated gate type semiconductor device in which the reliability and characteristics thereof are not deteriorated due to pressing action and power inverter using the same Jun. 3, 1997
5619047 Semiconductor diode in which electrons are injected into a reverse current Apr. 8, 1997
5528058 IGBT device with platinum lifetime control and reduced gaw Jun. 18, 1996
5525816 Insulated gate semiconductor device with stripe widths Jun. 11, 1996
5463231 Method of operating thyristor with insulated gates Oct. 31, 1995

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