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Class Information
Number: 257/143
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > With extended latchup current level (e.g., comfet device) > Having anode shunt means
Description: Subject matter wherein the extended latchup current level device has means connected across the emitter-base junction of the PNP transistor portion of the regenerative device to controllably divert current from the emitter-base junction.










Patents under this class:
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Patent Number Title Of Patent Date Issued
8686469 Semiconductor device Apr. 1, 2014
8658463 Memristor with embedded switching layer Feb. 25, 2014
8599602 Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device Dec. 3, 2013
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8558276 Bottom source NMOS triggered zener clamp for configuring an ultra-low voltage transient voltage suppressor (TVS) Oct. 15, 2013
8482029 Semiconductor device and integrated circuit including the semiconductor device Jul. 9, 2013
8461622 Reverse-conducting semiconductor device Jun. 11, 2013
8432721 Method of programming variable resistance element, method of initializing variable resistance element, and nonvolatile storage device Apr. 30, 2013
8384124 Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device Feb. 26, 2013
8232579 Semiconductor device and method for producing a semiconductor device Jul. 31, 2012
8168999 Semiconductor device having IGBT and diode May. 1, 2012
8143645 Semiconductor device having a stacked multi structure that has layered insulated gate-type bipolar transistors Mar. 27, 2012
8129228 Manufacturing method for integrating a shunt resistor into a semiconductor package Mar. 6, 2012
7910391 Getter formed by laser-treatment and methods of making same Mar. 22, 2011
7847391 Manufacturing method for integrating a shunt resistor into a semiconductor package Dec. 7, 2010
7244969 Power semiconductor device Jul. 17, 2007
7153761 Method of transferring a thin crystalline semiconductor layer Dec. 26, 2006
7141832 Semiconductor device and capacitance regulation circuit Nov. 28, 2006
7112868 IGBT with monolithic integrated antiparallel diode Sep. 26, 2006
7064359 Switching semiconductor device and switching circuit Jun. 20, 2006
6887731 Liquid crystal display and method of manufacturing the same May. 3, 2005
6727526 Thyristor with recovery time voltage surge resistance Apr. 27, 2004
6603153 Fast recovery diode and method for its manufacture Aug. 5, 2003
6355948 Semiconductor integrated circuit device Mar. 12, 2002
6271545 Asymmetrical thyristor with blocking/sweep voltage independent of temperature behavior Aug. 7, 2001
6107651 Gate turn-off thyristor with stop layer Aug. 22, 2000
6069371 Semiconductor rectifier and a method for driving the same May. 30, 2000
6066863 Lateral semiconductor arrangement for power IGS May. 23, 2000
5981982 Dual gated power electronic switching devices Nov. 9, 1999
5977569 Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability Nov. 2, 1999
5801420 Lateral semiconductor arrangement for power ICS Sep. 1, 1998
5796124 MOS gate controlled thyristor Aug. 18, 1998
5760424 Integrated circuit arrangement having at least one IGBT Jun. 2, 1998
5751024 Insulated gate semiconductor device May. 12, 1998
5644149 Anode-side short structure for asymmetric thyristors Jul. 1, 1997
5633515 Semiconductor component arrangement for overvoltage protection of MOSFETs and IGBTS May. 27, 1997
5543639 MOS gate controlled thyristor Aug. 6, 1996
5360984 IGBT with freewheeling diode Nov. 1, 1994
5357120 Compound semiconductor device and electric power converting apparatus using such device Oct. 18, 1994
5343052 Lateral insulated gate bipolar transistor Aug. 30, 1994
5306929 MOS controlled thyristor Apr. 26, 1994
5162876 Semiconductor device having high breakdown voltage Nov. 10, 1992
5144401 Turn-on/off driving technique for insulated gate thyristor Sep. 1, 1992
5124773 Conductivity-modulation metal oxide semiconductor field effect transistor Jun. 23, 1992
5086330 Bipolar semiconductor switching device Feb. 4, 1992
5068700 Lateral conductivity modulated MOSFET Nov. 26, 1991
4980743 Conductivity-modulation metal oxide semiconductor field effect transistor Dec. 25, 1990
4841345 Modified conductivity modulated MOSFET Jun. 20, 1989
4827321 Metal oxide semiconductor gated turn off thyristor including a schottky contact May. 2, 1989
4786958 Lateral dual gate thyristor and method of fabricating same Nov. 22, 1988

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