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Class Information
Number: 257/142
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > With extended latchup current level (e.g., comfet device) > Having impurity doping for gain reduction
Description: Subject matter wherein the extended latchup current level device has impurity dopant to reduce device regenerative gain, i.e., the gain or amplification of one or more of the active junction portions connected in regenerative fashion.

Patents under this class:
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Patent Number Title Of Patent Date Issued
8674404 Additional metal routing in semiconductor devices Mar. 18, 2014
8633521 Self-bootstrapping field effect diode structures and methods Jan. 21, 2014
8587071 Electrostatic discharge (ESD) guard ring protective structure Nov. 19, 2013
8466491 Semiconductor component with improved softness Jun. 18, 2013
8450793 Semiconductor module May. 28, 2013
8378392 Trench MOSFET with body region having concave-arc shape Feb. 19, 2013
8242537 IGBT with fast reverse recovery time rectifier and manufacturing method thereof Aug. 14, 2012
7846782 Diode array and method of making thereof Dec. 7, 2010
7732833 High-voltage semiconductor switching element Jun. 8, 2010
7622732 Heterostructure nanotube devices Nov. 24, 2009
7589359 Silicon controlled rectifier Sep. 15, 2009
7498614 Voltage sustaining layer with opposite-doped islands for semiconductor power devices Mar. 3, 2009
7414262 Electronic devices and methods for forming the same Aug. 19, 2008
7345296 Nanotube transistor and rectifying devices Mar. 18, 2008
7227197 Semiconductor high-voltage devices Jun. 5, 2007
7199404 Semiconductor substrate and semiconductor device using the same Apr. 3, 2007
7029956 Memory system capable of operating at high temperatures and method for fabricating the same Apr. 18, 2006
6936867 Semiconductor high-voltage devices Aug. 30, 2005
6888177 Increased base-emitter capacitance May. 3, 2005
6867083 Method of forming a body contact of a transistor and structure therefor Mar. 15, 2005
6858887 BJT device configuration and fabrication method with reduced emitter width Feb. 22, 2005
6825110 Method for fabricating semiconductor component with an optimized thickness Nov. 30, 2004
6734497 Insulated gate bipolar transistor, semiconductor device, method of manufacturing insulated-gate bipolar transistor, and method of manufacturing semiconductor device May. 11, 2004
6635906 Voltage sustaining layer with opposite-doped islands for semi-conductor power devices Oct. 21, 2003
6583024 High resistivity silicon wafer with thick epitaxial layer and method of producing same Jun. 24, 2003
6525346 Semiconductor device and its manufacturing method capable of reducing low frequency noise Feb. 25, 2003
6465283 Structure and fabrication method using latch-up implantation for improving latch-up immunity in CMOS fabrication process Oct. 15, 2002
6452219 Insulated gate bipolar transistor and method of fabricating the same Sep. 17, 2002
6281546 Insulated gate field effect transistor and manufacturing method of the same Aug. 28, 2001
6255672 Semiconductor device Jul. 3, 2001
5977569 Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability Nov. 2, 1999
5917204 Insulated gate bipolar transistor with reduced electric fields Jun. 29, 1999
5757035 Semiconductor device May. 26, 1998
5753943 Insulated gate type field effect transistor and method of manufacturing the same May. 19, 1998
5701023 Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness Dec. 23, 1997
5644149 Anode-side short structure for asymmetric thyristors Jul. 1, 1997
5631483 Power device integrated structure with low saturation voltage May. 20, 1997
5591991 Semiconductor device and method of manufacturing the same Jan. 7, 1997
5528058 IGBT device with platinum lifetime control and reduced gaw Jun. 18, 1996
5466951 Controllable power semiconductor element with buffer zone and method for the manufacture thereof Nov. 14, 1995
5466951 Controllable power semiconductor element with buffer zone and method for the manufacture thereof Nov. 14, 1995
5463231 Method of operating thyristor with insulated gates Oct. 31, 1995
5391898 Insulated gate bipolar transistor having high short-circuit and latch-up withstandability Feb. 21, 1995
5360983 Insulated gate bipolar transistor having a specific buffer layer resistance Nov. 1, 1994
5357120 Compound semiconductor device and electric power converting apparatus using such device Oct. 18, 1994
5326993 Insulated gate bipolar transistor Jul. 5, 1994
5262336 IGBT process to produce platinum lifetime control Nov. 16, 1993
5182626 Insulated gate bipolar transistor and method of manufacturing the same Jan. 26, 1993
5144401 Turn-on/off driving technique for insulated gate thyristor Sep. 1, 1992
5025293 Conductivity modulation type MOSFET Jun. 18, 1991

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