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Class Information
Number: 257/141
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > With extended latchup current level (e.g., comfet device) > Lateral structure, i.e., current flow parallel to main device surface
Description: Subject matter wherein the extended latchup current level device is structured so that operating current flows parallel to the main device surface (i.e., horizontally or laterally).
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7595531 |
Semiconductor device |
Sep. 29, 2009 |
| 7388255 |
Semiconductor device having separation region |
Jun. 17, 2008 |
| 7208820 |
Substrate having a plurality of I/O routing arrangements for a microelectronic device |
Apr. 24, 2007 |
| 7205629 |
Lateral super junction field effect transistor |
Apr. 17, 2007 |
| 7196361 |
Cascoded bi-directional high voltage ESD protection structure |
Mar. 27, 2007 |
| 7141832 |
Semiconductor device and capacitance regulation circuit |
Nov. 28, 2006 |
| 7141831 |
Snapback clamp having low triggering voltage for ESD protection |
Nov. 28, 2006 |
| 7135745 |
Fin thyristor-based semiconductor device |
Nov. 14, 2006 |
| 7109533 |
Electrostatic discharge protection device |
Sep. 19, 2006 |
| 7091557 |
Semiconductor component with increased dielectric strength and/or reduced on resistance |
Aug. 15, 2006 |
| 7045830 |
High-voltage diodes formed in advanced power integrated circuit devices |
May. 16, 2006 |
| 7042027 |
Gated lateral thyristor-based random access memory cell (GLTRAM) |
May. 9, 2006 |
| 7029956 |
Memory system capable of operating at high temperatures and method for fabricating the same |
Apr. 18, 2006 |
| 6936866 |
Semiconductor component |
Aug. 30, 2005 |
| 6891206 |
Lateral thyristor structure for protection against electrostatic discharge |
May. 10, 2005 |
| 6887731 |
Liquid crystal display and method of manufacturing the same |
May. 3, 2005 |
| 6864533 |
MOS field effect transistor with reduced on-resistance |
Mar. 8, 2005 |
| 6858949 |
Semiconductor memory device and method for arranging memory cells |
Feb. 22, 2005 |
| 6856030 |
Semiconductor latches and SRAM devices |
Feb. 15, 2005 |
| 6856031 |
SRAM cell with well contacts and P+ diffusion crossing to ground or N+ diffusion crossing to VDD |
Feb. 15, 2005 |
| 6803627 |
Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone |
Oct. 12, 2004 |
| 6777748 |
Bi-directional semiconductor component |
Aug. 17, 2004 |
| 6768180 |
Superjunction LDMOST using an insulator substrate for power integrated circuits |
Jul. 27, 2004 |
| 6740930 |
Lateral MOS power transistor |
May. 25, 2004 |
| 6720624 |
LVTSCR-like structure with internal emitter injection control |
Apr. 13, 2004 |
| 6687266 |
Organic light emitting materials and devices |
Feb. 3, 2004 |
| 6583044 |
Buried channel in a substrate and method of making same |
Jun. 24, 2003 |
| 6576934 |
Embedded SCR protection device for output and input pad |
Jun. 10, 2003 |
| 6555878 |
Umos-like gate-controlled thyristor structure for ESD protection |
Apr. 29, 2003 |
| 6552398 |
T-Ram array having a planar cell structure and method for fabricating the same |
Apr. 22, 2003 |
| 6545321 |
ESD protection circuit for a semiconductor integrated circuit |
Apr. 8, 2003 |
| 6541801 |
Triac with a holding voltage that is greater than the dc bias voltages that are on the to-be-protected nodes |
Apr. 1, 2003 |
| 6521952 |
Method of forming a silicon controlled rectifier devices in SOI CMOS process for on-chip ESD protection |
Feb. 18, 2003 |
| 6507071 |
Lateral high-voltage sidewall transistor |
Jan. 14, 2003 |
| 6495864 |
High-voltage semiconductor component, method for the production and use thereof |
Dec. 17, 2002 |
| 6465864 |
Diode structure on MOS wafer |
Oct. 15, 2002 |
| 6433368 |
LVTSCR with a holding voltage that is greater than a DC bias voltage on a to-be-protected node |
Aug. 13, 2002 |
| 6313485 |
Gate-controlled thyristor |
Nov. 6, 2001 |
| 6207997 |
Thin film transistor for antistatic circuit and method for fabricating the same |
Mar. 27, 2001 |
| 6144047 |
Semiconductor device having impurity concentrations for preventing a parasitic channel |
Nov. 7, 2000 |
| 6137140 |
Integrated SCR-LDMOS power device |
Oct. 24, 2000 |
| 6104045 |
High density planar SRAM cell using bipolar latch-up and gated diode breakdown |
Aug. 15, 2000 |
| 6097063 |
Semiconductor device having a plurality of parallel drift regions |
Aug. 1, 2000 |
| 6091107 |
Semiconductor devices |
Jul. 18, 2000 |
| 6049095 |
Semiconductor device |
Apr. 11, 2000 |
| 6023078 |
Bidirectional silicon carbide power devices having voltage supporting regions therein for providing improved blocking voltage capability |
Feb. 8, 2000 |
| 5945723 |
Composite controlled semiconductor device |
Aug. 31, 1999 |
| 5932897 |
High-breakdown-voltage semiconductor device |
Aug. 3, 1999 |
| 5920087 |
Lateral IGBT |
Jul. 6, 1999 |
| 5869850 |
Lateral insulated gate bipolar transistor |
Feb. 9, 1999 |
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