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Class Information
Number: 257/139
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > With extended latchup current level (e.g., comfet device)
Description: Subject matter wherein the regenerative active junction type switching device (e.g., a conductivity modulated FET) includes means to provide regenerative action without latchup over an extended current range of the device (i.e., by increasing IH
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 4994871 |
Insulated gate bipolar transistor with improved latch-up current level and safe operating area |
Feb. 19, 1991 |
| 4990975 |
Insulated gate bipolar transistor and method of manufacturing the same |
Feb. 5, 1991 |
| 4990978 |
Semiconductor device |
Feb. 5, 1991 |
| 4928155 |
Lateral conductivity modulated MOSFET |
May. 22, 1990 |
| 4896196 |
Vertical DMOS power transistor with an integral operating condition sensor |
Jan. 23, 1990 |
| 4851888 |
Conductivity modulation type vertical MOS-FET |
Jul. 25, 1989 |
| 4837606 |
Vertical MOSFET with reduced bipolar effects |
Jun. 6, 1989 |
| 4801986 |
Vertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and method |
Jan. 31, 1989 |
| 4764802 |
Semiconductor devices |
Aug. 16, 1988 |
| 4646117 |
Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions |
Feb. 24, 1987 |
| 4635086 |
Self turnoff type semiconductor switching device |
Jan. 6, 1987 |
| 4466010 |
Thyristor with enhancement and depletion mode FET control for improved switch behavior and method of using same |
Aug. 14, 1984 |
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