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Class Information
Number: 257/139
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > With extended latchup current level (e.g., comfet device)
Description: Subject matter wherein the regenerative active junction type switching device (e.g., a conductivity modulated FET) includes means to provide regenerative action without latchup over an extended current range of the device (i.e., by increasing IH
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 7432135 |
Semiconductor device and method of manufacturing the same |
Oct. 7, 2008 |
| 7417282 |
Vertical double-diffused metal oxide semiconductor (VDMOS) device incorporating reverse diode |
Aug. 26, 2008 |
| 7335947 |
Angled implant for shorter trench emitter |
Feb. 26, 2008 |
| 7309898 |
Method and apparatus for providing noise suppression in an integrated circuit |
Dec. 18, 2007 |
| 7247887 |
Segmented channel MOS transistor |
Jul. 24, 2007 |
| 7186355 |
Insulated nanoscopic pathways, compositions and devices of the same |
Mar. 6, 2007 |
| 7173290 |
Thyristor switch with turn-off current shunt, and operating method |
Feb. 6, 2007 |
| 7126167 |
Monolithically integrated resistive structure with power IGBT (insulated gate bipolar transistor) devices |
Oct. 24, 2006 |
| 7091557 |
Semiconductor component with increased dielectric strength and/or reduced on resistance |
Aug. 15, 2006 |
| 7050125 |
Transferring TFT method with adhesive layer |
May. 23, 2006 |
| 7045830 |
High-voltage diodes formed in advanced power integrated circuit devices |
May. 16, 2006 |
| RE38953 |
Insulated gate semiconductor device and method of manufacturing the same |
Jan. 31, 2006 |
| 6931345 |
Method for quantifying safe operating area for bipolar junction transistor |
Aug. 16, 2005 |
| 6914296 |
Controllable semiconductor component with multi-section control electrode |
Jul. 5, 2005 |
| 6894347 |
Power semiconductor element capable of improving short circuit withstand capability while maintaining low on-voltage and method of fabricating the same |
May. 17, 2005 |
| 6870200 |
Insulated gate type semiconductor device having a diffusion region contacting bottom and side portions of trenches |
Mar. 22, 2005 |
| 6867437 |
Semiconductor device |
Mar. 15, 2005 |
| 6809383 |
Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure |
Oct. 26, 2004 |
| 6803627 |
Reverse-blocking power semiconductor component having a region short-circuited to a drain-side part of a body zone |
Oct. 12, 2004 |
| 6800897 |
Integrated circuit power devices having junction barrier controlled schottky diodes therein |
Oct. 5, 2004 |
| 6798019 |
IGBT with channel resistors |
Sep. 28, 2004 |
| 6750936 |
Display device |
Jun. 15, 2004 |
| 6747295 |
Semiconductor device with trench gate |
Jun. 8, 2004 |
| 6740930 |
Lateral MOS power transistor |
May. 25, 2004 |
| 6737705 |
Insulated gate semiconductor device |
May. 18, 2004 |
| 6727526 |
Thyristor with recovery time voltage surge resistance |
Apr. 27, 2004 |
| 6707138 |
Semiconductor device including metal strap electrically coupled between semiconductor die and metal leadframe |
Mar. 16, 2004 |
| 6703665 |
Transistor |
Mar. 9, 2004 |
| 6696705 |
Power semiconductor component having a mesa edge termination |
Feb. 24, 2004 |
| 6693310 |
Semiconductor device and manufacturing method thereof |
Feb. 17, 2004 |
| 6683348 |
Insulated gate bipolar semiconductor device transistor with a ladder shaped emitter |
Jan. 27, 2004 |
| 6680515 |
Lateral high voltage transistor having spiral field plate and graded concentration doping |
Jan. 20, 2004 |
| 6617641 |
High voltage semiconductor device capable of increasing a switching speed |
Sep. 9, 2003 |
| 6614073 |
SEMICONDUCTOR CHIP WITH A BASE ELECTRODE AND AN EMITTER ELECTRODE EXPOSED ON ONE OF A PAIR OF OPPOSITE LATERAL FACES AND A COLLECTOR ELECTRODE EXPOSED ON A REMAINING ONE OF THE PAIR OF THE OPP |
Sep. 2, 2003 |
| 6605829 |
Semiconductor device |
Aug. 12, 2003 |
| 6605830 |
Power semiconductor device including an IGBT with a MOS transistor as a current suppressing device incorporated therein |
Aug. 12, 2003 |
| 6576936 |
Bipolar transistor with an insulated gate electrode |
Jun. 10, 2003 |
| 6566690 |
Single feature size MOS technology power device |
May. 20, 2003 |
| 6566691 |
Semiconductor device with trench gate having structure to promote conductivity modulation |
May. 20, 2003 |
| 6563170 |
Insulated gate bipolar transistor |
May. 13, 2003 |
| 6555878 |
Umos-like gate-controlled thyristor structure for ESD protection |
Apr. 29, 2003 |
| 6552391 |
Low voltage dual-well trench MOS device |
Apr. 22, 2003 |
| 6545297 |
High density vertical SRAM cell using bipolar latchup induced by gated diode breakdown |
Apr. 8, 2003 |
| 6528826 |
Depletion type MOS semiconductor device and MOS power IC |
Mar. 4, 2003 |
| 6521982 |
Packaging high power integrated circuit devices |
Feb. 18, 2003 |
| 6521919 |
Semiconductor device of reduced thermal resistance and increased operating area |
Feb. 18, 2003 |
| 6469344 |
Semiconductor device having low on resistance high speed turn off and short switching turn off storage time |
Oct. 22, 2002 |
| 6462382 |
MOS type semiconductor apparatus |
Oct. 8, 2002 |
| 6458632 |
UMOS-like gate-controlled thyristor structure for ESD protection |
Oct. 1, 2002 |
| 6452219 |
Insulated gate bipolar transistor and method of fabricating the same |
Sep. 17, 2002 |
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