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Class Information
Number: 257/137
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > Having controllable emitter shunt
Description: Subject matter wherein the regenerative switching device is combined with a junction field effect transistor that is connected across an emitter-base junction of the regenerative device to controllably divert current from the emitter-base junction.










Sub-classes under this class:

Class Number Class Name Patents
257/138 Having gate turn off (gto) feature 168


Patents under this class:
1 2

Patent Number Title Of Patent Date Issued
8519432 Semiconductor switch Aug. 27, 2013
8178409 Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same May. 15, 2012
7968888 Solid-state image sensor and manufacturing method thereof Jun. 28, 2011
7961540 Dynamic data restore in thyristor-based memory device Jun. 14, 2011
7948005 Insulated-gate bipolar transistor (IGBT) May. 24, 2011
7915678 Snapback capable NLDMOS, DMOS and extended voltage NMOS devices Mar. 29, 2011
7863644 Bipolar transistor and method of forming the bipolar transistor with a backside contact Jan. 4, 2011
7795637 ESD protection circuit Sep. 14, 2010
7714353 Insulated gate semiconductor device and the method of manufacturing the same May. 11, 2010
7705368 Insulated gate type thyristor Apr. 27, 2010
7433229 Flash memory device with shunt Oct. 7, 2008
7405963 Dynamic data restore in thyristor-based memory device Jul. 29, 2008
7183591 Trench isolation for thyristor-based device Feb. 27, 2007
7170106 Power semiconductor device Jan. 30, 2007
7109097 Process sequence for doped silicon fill of deep trenches Sep. 19, 2006
7078740 Power semiconductor device Jul. 18, 2006
7042759 Dynamic data restore in thyristor-based memory device May. 9, 2006
6998652 Trench isolation for thyristor-based device Feb. 14, 2006
6980457 Thyristor-based device having a reduced-resistance contact to a buried emitter region Dec. 27, 2005
6965131 Thyristor switch with turn-off current shunt, and operating method Nov. 15, 2005
6911679 LVTSCR with compact design Jun. 28, 2005
6891205 Stability in thyristor-based memory device May. 10, 2005
6885581 Dynamic data restore in thyristor-based memory device Apr. 26, 2005
6870200 Insulated gate type semiconductor device having a diffusion region contacting bottom and side portions of trenches Mar. 22, 2005
6809349 Power semiconductor device Oct. 26, 2004
6686613 Punch through type power device Feb. 3, 2004
6666481 Shunt connection to emitter Dec. 23, 2003
6653175 Stability in thyristor-based memory device Nov. 25, 2003
6620653 Semiconductor device and method of manufacturing the same Sep. 16, 2003
6476429 Semiconductor device with breakdown voltage improved by hetero region Nov. 5, 2002
6472686 Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control Oct. 29, 2002
6472692 Semiconductor device Oct. 29, 2002
6462359 Stability in thyristor-based memory device Oct. 8, 2002
6441407 Gate controlled thyristor driven with low-inductance Aug. 27, 2002
6278140 Insulated gate thyristor Aug. 21, 2001
6236069 Insulated-gate thyristor May. 22, 2001
6201279 Semiconductor component having a small forward voltage and high blocking ability Mar. 13, 2001
6169299 Semiconductor device Jan. 2, 2001
6137122 Latch-up controllable insulated gate bipolar transistor Oct. 24, 2000
6121640 Monolithically integrated device with protective structure Sep. 19, 2000
6118141 Emitter-switched thyristor Sep. 12, 2000
6091087 Insulated gate thyristor Jul. 18, 2000
6054728 Insulated gate thyristor Apr. 25, 2000
6011280 IGBT power device with improved resistance to reverse power pulses Jan. 4, 2000
5945723 Composite controlled semiconductor device Aug. 31, 1999
5925899 Vertical type insulated gate bipolar transistor having a planar gate structure Jul. 20, 1999
5883401 Monolithic semiconductor switch and supply circuit component Mar. 16, 1999
5841155 Semiconductor device containing two joined substrates Nov. 24, 1998
5838026 Insulated-gate semiconductor device Nov. 17, 1998
5831291 Insulated gate bipolar transistors Nov. 3, 1998

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