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Class Information
Number: 257/137
Name: Active solid-state devices (e.g., transistors, solid-state diodes) > Regenerative type switching device (e.g., scr, comfet, thyristor) > Combined with field effect transistor > Having controllable emitter shunt
Description: Subject matter wherein the regenerative switching device is combined with a junction field effect transistor that is connected across an emitter-base junction of the regenerative device to controllably divert current from the emitter-base junction.
Sub-classes under this class:
Patents under this class:
| Patent Number |
Title Of Patent |
Date Issued |
| 8519432 |
Semiconductor switch |
Aug. 27, 2013 |
| 8178409 |
Semiconductor device with alternately arranged P-type and N-type thin semiconductor layers and method for manufacturing the same |
May. 15, 2012 |
| 7968888 |
Solid-state image sensor and manufacturing method thereof |
Jun. 28, 2011 |
| 7961540 |
Dynamic data restore in thyristor-based memory device |
Jun. 14, 2011 |
| 7948005 |
Insulated-gate bipolar transistor (IGBT) |
May. 24, 2011 |
| 7915678 |
Snapback capable NLDMOS, DMOS and extended voltage NMOS devices |
Mar. 29, 2011 |
| 7863644 |
Bipolar transistor and method of forming the bipolar transistor with a backside contact |
Jan. 4, 2011 |
| 7795637 |
ESD protection circuit |
Sep. 14, 2010 |
| 7714353 |
Insulated gate semiconductor device and the method of manufacturing the same |
May. 11, 2010 |
| 7705368 |
Insulated gate type thyristor |
Apr. 27, 2010 |
| 7433229 |
Flash memory device with shunt |
Oct. 7, 2008 |
| 7405963 |
Dynamic data restore in thyristor-based memory device |
Jul. 29, 2008 |
| 7183591 |
Trench isolation for thyristor-based device |
Feb. 27, 2007 |
| 7170106 |
Power semiconductor device |
Jan. 30, 2007 |
| 7109097 |
Process sequence for doped silicon fill of deep trenches |
Sep. 19, 2006 |
| 7078740 |
Power semiconductor device |
Jul. 18, 2006 |
| 7042759 |
Dynamic data restore in thyristor-based memory device |
May. 9, 2006 |
| 6998652 |
Trench isolation for thyristor-based device |
Feb. 14, 2006 |
| 6980457 |
Thyristor-based device having a reduced-resistance contact to a buried emitter region |
Dec. 27, 2005 |
| 6965131 |
Thyristor switch with turn-off current shunt, and operating method |
Nov. 15, 2005 |
| 6911679 |
LVTSCR with compact design |
Jun. 28, 2005 |
| 6891205 |
Stability in thyristor-based memory device |
May. 10, 2005 |
| 6885581 |
Dynamic data restore in thyristor-based memory device |
Apr. 26, 2005 |
| 6870200 |
Insulated gate type semiconductor device having a diffusion region contacting bottom and side portions of trenches |
Mar. 22, 2005 |
| 6809349 |
Power semiconductor device |
Oct. 26, 2004 |
| 6686613 |
Punch through type power device |
Feb. 3, 2004 |
| 6666481 |
Shunt connection to emitter |
Dec. 23, 2003 |
| 6653175 |
Stability in thyristor-based memory device |
Nov. 25, 2003 |
| 6620653 |
Semiconductor device and method of manufacturing the same |
Sep. 16, 2003 |
| 6476429 |
Semiconductor device with breakdown voltage improved by hetero region |
Nov. 5, 2002 |
| 6472686 |
Silicon carbide (SIC) gate turn-off (GTO) thyristor apparatus and method for high power control |
Oct. 29, 2002 |
| 6472692 |
Semiconductor device |
Oct. 29, 2002 |
| 6462359 |
Stability in thyristor-based memory device |
Oct. 8, 2002 |
| 6441407 |
Gate controlled thyristor driven with low-inductance |
Aug. 27, 2002 |
| 6278140 |
Insulated gate thyristor |
Aug. 21, 2001 |
| 6236069 |
Insulated-gate thyristor |
May. 22, 2001 |
| 6201279 |
Semiconductor component having a small forward voltage and high blocking ability |
Mar. 13, 2001 |
| 6169299 |
Semiconductor device |
Jan. 2, 2001 |
| 6137122 |
Latch-up controllable insulated gate bipolar transistor |
Oct. 24, 2000 |
| 6121640 |
Monolithically integrated device with protective structure |
Sep. 19, 2000 |
| 6118141 |
Emitter-switched thyristor |
Sep. 12, 2000 |
| 6091087 |
Insulated gate thyristor |
Jul. 18, 2000 |
| 6054728 |
Insulated gate thyristor |
Apr. 25, 2000 |
| 6011280 |
IGBT power device with improved resistance to reverse power pulses |
Jan. 4, 2000 |
| 5945723 |
Composite controlled semiconductor device |
Aug. 31, 1999 |
| 5925899 |
Vertical type insulated gate bipolar transistor having a planar gate structure |
Jul. 20, 1999 |
| 5883401 |
Monolithic semiconductor switch and supply circuit component |
Mar. 16, 1999 |
| 5841155 |
Semiconductor device containing two joined substrates |
Nov. 24, 1998 |
| 5838026 |
Insulated-gate semiconductor device |
Nov. 17, 1998 |
| 5831291 |
Insulated gate bipolar transistors |
Nov. 3, 1998 |
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